EasyPIM™2BModulPressFITmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EasyPIM™2BmodulePressFITwithtrench/fieldstopIGBT4andEmitterControlled4Diode
1
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryDataIGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC25
39 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 175 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
VCE sat
1,85
2,15
2,25
2,25
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,20 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,45 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,05 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
td on
0,026
0,026
0,026
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
tr
0,016
0,02
0,021
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
td off
0,19
0,28
0,30
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
tf
0,18
0,21
0,22
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = 35 nH
VGE = ±15 V, di/dt = 1700 A/µs (Tvj = 150°C)
RGon = 20 ΩEon
1,60
2,40
2,60
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = 35 nH
VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C)
RGoff = 20 ΩEoff
1,45
2,15
2,35
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt ISC
90
A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,75 0,85 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,70 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
2
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF25 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 50 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 90,0
75,0 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
VF
1,75
1,75
1,75
2,25
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
IRM
48,0
50,0
52,0
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Qr
2,50
4,40
4,90
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 25 A, - diF/dt = 1700 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Erec
0,95
1,75
2,05
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,10 1,20 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,90 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
二极管,整流器/Diode,Rectifier
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1600 V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip TC = 100°C IFRMSM 50 A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput TC = 100°C IRMSM 50 A
正向浪涌电流
Surgeforwardcurrent tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C IFSM 450
370 A
A
I2t-值
I²t-value tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C I²t 1000
685 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage Tvj = 150°C, IF = 25 A VF0,90 V
反向电流
Reversecurrent Tvj = 150°C, VR = 1600 V IR1,00 mA
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,05 1,15 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,95 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op °C
3
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage Tvj = 25°C VCES 1200 V
连续集电极直流电流
ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC25
39 A
A
集电极重复峰值电流
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 50 A
总功率损耗
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 175 W
栅极－发射极峰值电压
Gate-emitterpeakvoltage VGES +/-20 V
特征值/CharacteristicValues min. typ. max.
集电极－发射极饱和电压
Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
VCE sat
1,85
2,15
2,25
2,25
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
栅极电荷
Gatecharge VGE = -15 V ... +15 V QG0,20 µC
内部栅极电阻
Internalgateresistor Tvj = 25°C RGint 0,0 Ω
输入电容
Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,45 nF
反向传输电容
Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,05 nF
集电极-发射极截止电流
Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
栅极-发射极漏电流
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 68 Ω
td on
0,08
0,08
0,08
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 68 Ω
tr
0,042
0,051
0,053
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 68 Ω
td off
0,34
0,44
0,46
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 68 Ω
tf
0,18
0,215
0,225
µs
µs
µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse IC = 25 A, VCE = 600 V, LS = t.b.d. nH
VGE = ±15 V
RGon = 68 ΩEon
3,90
5,00
5,40
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断损耗能量(每脉冲）
Turn-offenergylossperpulse IC = 25 A, VCE = 600 V, LS = t.b.d. nH
VGE = ±15 V
RGoff = 68 ΩEoff
1,50
2,20
2,40
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
短路数据
SCdata VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt ISC
90
A
Tvj = 150°C
tP ≤ 10 µs,
结－外壳热阻
Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC 0,75 0,85 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,70 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
4
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage Tvj = 25°C VRRM 1200 V
连续正向直流电流
ContinuousDCforwardcurrent IF10 A
正向重复峰值电流
Repetitivepeakforwardcurrent tP = 1 ms IFRM 20 A
I2t-值
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 16,0
14,0 A²s
A²s
特征值/CharacteristicValues min. typ. max.
正向电压
Forwardvoltage IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
VF
1,75
1,75
1,75
2,25
V
V
V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复峰值电流
Peakreverserecoverycurrent IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V IRM
12,0
10,0
8,00
A
A
A
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredcharge IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V Qr
0,90
1,70
1,90
µC
µC
µC
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverserecoveryenergy IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V Erec
0,24
0,52
0,59
mJ
mJ
mJ
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
结－外壳热阻
Thermalresistance,junctiontocase 每个二极管/perdiode RthJC 1,75 1,90 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink 每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 1,30 K/W
在开关状态下温度
Temperatureunderswitchingconditions Tvj op -40 150 °C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues min. typ. max.
额定电阻值
Ratedresistance TC = 25°C R25 5,00 kΩ
R100偏差
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
耗散功率
Powerdissipation TC = 25°C P25 20,0 mW
B-值
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-值
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-值
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
5
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
内部绝缘
Internalisolation 基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140) AI2O3
爬电距离
Creepagedistance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 11,5
6,3 mm
电气间隙
Clearance 端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal 10,0
5,0 mm
相对电痕指数
Comperativetrackingindex CTI > 200
min. typ. max.
杂散电感,模块
Strayinductancemodule LsCE 30 nH
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch RCC'+EE'
RAA'+CC' 5,00
6,00 mΩ
储存温度
Storagetemperature Tstg -40 125 °C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp F 40 - 80 N
重量
Weight G39 g
6
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
VCE [V]
IC [A]
0,0 1,0 2,0 3,0 4,0 5,0
0
5
10
15
20
25
30
35
40
45
50
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
VGE [V]
IC [A]
5 6 7 8 9 10 11 12 13
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=20Ω,RGoff=20Ω,VCE=600V
IC [A]
E [mJ]
0 10 20 30 40 50
0,0
1,0
2,0
3,0
4,0
5,0
6,0
7,0
8,0
9,0
10,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
7
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180 200
0
1
2
3
4
5
6
7
8
9
10
11
12
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,1
1
10
ZthJH : IGBT
i:
ri[K/W]:
τi[s]:
1
0,084
0,0005
2
0,195
0,005
3
0,587
0,05
4
0,585
0,2
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=20Ω,Tvj=150°C
VCE [V]
IC [A]
0 200 400 600 800 1000 1200 1400
0
5
10
15
20
25
30
35
40
45
50
55
IC, Modul
IC, Chip
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
8
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=20Ω,VCE=600V
IF [A]
E [mJ]
0 5 10 15 20 25 30 35 40 45 50
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=25A,VCE=600V
RG [Ω]
E [mJ]
0 20 40 60 80 100 120 140 160 180 200
0,0
0,3
0,6
0,9
1,2
1,5
1,8
2,1
2,4
2,7
3,0
Erec, Tvj = 125°C
Erec, Tvj = 150°C
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
t [s]
ZthJH [K/W]
0,001 0,01 0,1 1 10
0,1
1
10
ZthJH: Diode
i:
ri[K/W]:
τi[s]:
1
0,166
0,0005
2
0,359
0,005
3
0,821
0,05
4
0,654
0,2
正向偏压特性二极管,整流器（典型)
forwardcharacteristicofDiode,Rectifier(typical)
IF=f(VF)
VF [V]
IF [A]
0,2 0,4 0,6 0,8 1,0 1,2 1,4
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 150°C
9
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
VCE [V]
IC [A]
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
正向偏压特性二极管，制动-斩波器（典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
VF [V]
IF [A]
0,0 0,5 1,0 1,5 2,0 2,5
0
2
4
6
8
10
12
14
16
18
20
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
R[Ω]
0 20 40 60 80 100 120 140 160
100
1000
10000
100000
Rtyp
10
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fin e o n
11
技术信息/TechnicalInformation
FP25R12W2T4_B11
IGBT-模块
IGBT-modules
preparedby:CM
approvedby:RS
dateofpublication:2013-11-04
revision:2.1
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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application.
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characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
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