1605-1YY0019-MT (A) - ALLEGRO MICROSYSTEMS

 2017 Microchip Technology Inc. DS20005839A-page 1

MIC2800

Features

• 2.7V to 5.5V Input Voltage Range

• 2 MHz DC/DC Converter and Two LDOs

• Integrated Power-on Reset (POR)

- Adjustable POR Delay Time

• LOWQ Mode

- 30 µA Total IQ when in LOWQ Mode

• DC/DC Converter

- Up to 600 mA of Output Current in PWM

Mode

-LOWQ

Mode: NO RIPPLE Light Load Mode

-75µV

RMS Output Noise in LOWQ Mode

- 2 MHz PWM Mode Operation

- > 90% Efficiency

• LDO1 Input Voltage Directly Connected to DC/DC

Converter Output Voltage for Maximum Efficiency

- Ideal for 1.8V to 1.5V Conversion

- 300 mA Output Current from 1.8V Input

- Output Voltage Down to 0.8V

• LDO2 – 300 mA Output Current Capable

• Thermal Shutdown Protection

• Current Limit Protection

• Simple, Leakage-Free Interfacing to Host MPU in

Applications with Backup Power

• Tiny 16-Pin 3mm x 3mm QFN Package

Applications

• Embedded MPU and MCU Power

• Portable and Wearable Applications

• Low-Power RF Systems

• Backup Power Systems

General Description

The MIC2800 is a high-performance power

management IC, featuring three output voltages with

maximum efficiency. Integrating a 2 MHz DC/DC

converter with an LDO post-regulator, the MIC2800

gives two high-efficiency outputs with a second,

300 mA LDO for maximum flexibility. The MIC2800

features a LOWQ mode, reducing the total current

draw while in this mode to less than 30 µA. In LOWQ

mode, the output noise of the DC/DC converter is

reduced to 75 µVRMS, significantly lower than other

converters that use a PFM light load mode that can

interfere with sensitive RF circuitry.

The DC/DC converter uses small values of L and C to

reduce board space but still retains efficiencies over

90% at load currents up to 600 mA.

The MIC2800 operates with very small ceramic output

capacitors and inductors for stability, reducing required

board space and component cost and it is available in

various output voltage options in the 16-pin

3mm x 3mm QFN leadless package.

Package Type

MIC2800

16-PIN 3mm X3mm QFN

EN2 Pin 16

Pin 15

Pin 14

Pin 13

EN1

CBYP

CSET

LOWQ

BIAS

SGND

PGND

POR

LDO1

LDO

Pin 1

Pin 2

Pin 3

Pin 4

Pin 12

Pin 11

Pin 10

Pin 9

VIN

LDO2

Pin 5

Pin 6

Pin 7

Pin 8

Digital Power Management IC 2 MHz, 600 mA DC/DC with Dual

300 mA/300 mA Low VIN LDOs

MIC2800

DS20005839A-page 2  2017 Microchip Technology Inc.

Typical Application Circuit (simplified)

Functional Diagram

VIN =

5V typ

LDO

MIC2800-G1JS

4.7 µF

VIN

EN2

Enable

VIN

2.2 µH

PGND

POR

2.2 µF

VDDIO_DDR

nRST

GPIO

SGND

/LOWQ

CBIAS

100 nF

10 µF

LDO1

10 µF

VDD_CORE

BIAS

LDO2

10 µF

VDD_IO

CBYP

100 nF

CBYP

CSET

10 nF

CSET

EN1

delay

SAMA5D2

MPU

DDR2

 2017 Microchip Technology Inc. DS20005839A-page 3

MIC2800

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage (VIN) ....................................................................................................................................–0.3 to +6.0V

Enable Input Voltage (VEN1, EN2) .....................................................................................................–0.3V to +(VIN+0.3V)

LOWQ, POR ............................................................................................................................................. –0.3V to +6.0V

Power Dissipation (Note 1) .................................................................................................................... Internally Limited

Lead Temperature (soldering, 10 sec.) ................................................................................................................. +260°C

Storage Temperature (TS) ...................................................................................................................... –65°C to +150°C

ESD Rating (Note 2) .................................................................................................................................................. 2 kV

Operating Ratings ‡

Supply Voltage (VIN) ................................................................................................................................. +2.7V to +5.5V

Enable Input Voltage (VEN1, EN2) ..................................................................................................................... 0V to +VIN

LOWQ, POR .................................................................................................................................................. 0V to +5.5V

Junction Temperature (TJ) ..................................................................................................................... –40°C to +125°C

Junction Thermal Resistance QFN-16 (JA) .......................................................................................................+45°C/W

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

‡ Notice: The device is not guaranteed to function outside its operating ratings.

1: The maximum allowable power dissipation of any TA (ambient temperature) is PD(max) = (TJ(max) – TA) / JA.

Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the

regulator will go into thermal shutdown.

2: Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5 k in series with

100 pF.

MIC2800

DS20005839A-page 4  2017 Microchip Technology Inc.

TABLE 1-1: ELECTRICAL CHARACTERISTICS (Note 1)

Electrical Characteristics: VIN = EN1 = EN2 = LOWQ = VOUT (Note 2) + 1V; COUTDC/DC = 2.2 µF, COUT1 = COUT2

= 2.2 µF; IOUTDC/DC = 100 mA;

IOUTLDO1 = IOUTLDO2 = 100 µA; TJ = 25°C, bold values indicate –40°C  TJ  +125°C; unless noted.

Parameter Symbol Min. Typ. Max. Units Conditions

UVLO Threshold UVLOTH 2.45 2.55 2.65 V Rising input voltage during turn on

UVLO Hysteresis UVLOHYS —100— mV

Ground Pin Current IGND —

800

1100

µA

VFB = GND (not switching);

LDO2 Only (EN1 = LOW)

Ground Pin Current in

Shutdown IGND_SHDN — 0.2 5 µA All EN = 0V

Ground Pin Current

(LOWQ mode) IGND_LOWQ —

µA

All channels ON, IDC/DC = ILDO1 =

ILDO2 = 0 mA

DC/DC and LDO1 OFF; ILDO2 =

0mA

Overtemperature

Shutdown TSD —160— °C

Overtemperature

Shutdown Hysteresis TSDHYS —23— °C

Enable Inputs (EN1; EN2; /LOWQ)

Enable Input Voltage

Logic Low VIH ——0.2 V

Enable Input Voltage

Logic High VIL 1.0 —— V

Enable Input Current IENLK

—0.1 1µA VIL  0.2V

—0.1 1µA VIH 1.0V

Turn-on Time

(LDO1 and LDO2) tTURN-ON —240

120

500

350 µs EN2 = VIN

EN1 = VIN

Turn-on Time (DC/DC) tTURN-ON —83350 µs EN2 = VIN; ILOAD = 300 mA; CBYP =

0.1 µF

POR Output

POR Threshold Voltage,

Failing VTHLOW_POR 90 91 — %

Low Threshold, % of nominal

(VDC/DC or VLDO1 or VLDO2) (Flag

ON)

POR Threshold Voltage,

Rising VTHIGH_POR —9699 %

High Threshold, % of nominal

(VDC/DC AND VLDO1 AND VLDO2)

(Flag OFF)

VOL VOLPOR —10100 mV POR Output Logic Low Voltage; IL =

250 µA

IPOR ILEAKPOR —0.01 1µA Flag Leakage Current, Flag OFF

CSET INPUT

CSET Pin Current

Source ICSET 0.75 1.25 1.75 µA VCSET = 0V

CSET Pin Threshold

Voltage VTHCSET — 1.25 — V POR = High

Note 1: Specification for packaged product only.

2: VOUT denotes the highest of the three output voltage.

 2017 Microchip Technology Inc. DS20005839A-page 5

MIC2800

TABLE 1-2: ELECTRICAL CHARACTERISTICS - DC/DC CONVERTER

Electrical Characteristics: VIN = VOUTDC/DC + 1V; EN1 = VIN; EN2 = GND; IOUTDC/DC = 100 mA; L = 2.2 µH;

COUTDC/DC = 2.2 µF; TJ = 25°C, bold values indicate –40°C to + 125°C; unless noted.

Parameter Symbol Min. Typ. Max. Units Conditions

LOWQ = High (Full Power Mode)

Output Voltage Accuracy VOUT

–2

–3 —+2

+3 % Fixed Output Voltages

Current Limit in PWM

Mode ILIM 0.75 1 1.6 A VOUT = 0.9*VNOM

FB pin voltage (ADJ only) VFB —800— mV

FB pin input current (ADJ

only) IFB —1 5 nA

Output Voltage Line

Regulation

(VOUT/VOUT)

/VIN

—0.2— %/V

VOUT > 2.4V; VIN = VOUT + 300 mV

to 5.5V, ILOAD= 100 mA

VOUT < 2.4V; VIN = 2.7V to 5.5V,

ILOAD= 100 mA

Output Voltage Load

Regulation VOUT/VOUT —0.21.5 %

20 mA < ILOAD < 300 mA

Maximum Duty Cycle DCMAX 100 — — % VFB  0.4V

High-Side Switch

ON-Resistance —

0.6

—

ISW = 150 mA VFB = 0.7VFB_NOM

Low-Side Switch

ON-Resistance 0.8 ISW = -150 mA VFB = 1.1VFB_NOM

Oscillator Frequency fosc 1.8 22.2 MHz

Output Voltage Noise VN—60—µV

RMS

COUT = 2.2 µF; CBYP = 0.1 µF;

10 Hz to 100 KHz

LOWQ = Low (Light Load Mode)

Output Voltage Accuracy VOUT

–2.0

—

+2.0

Variation from nominal VOUT

–3.0 +3.0 Variation from nominal VOUT

;

–40°C to +125°C

Output Voltage Temp.

Coefficient TCVOUT —40—ppm/C

Line Regulation (VOUT/VOUT)

/VIN

—0.02

0.3

0.6 %/V VIN = VOUT + 1V to 5.5V;

IOUT = 100 µA

Load Regulation VOUT/VOUT —0.21.5 %I

OUT = 100 µA to 50 mA

Ripple Rejection PSRR —

—dB

f = up to 1 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

f = 20 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

Current Limit ILIM_LOWQ 80 120 190 mA VOUT = 0V

MIC2800

DS20005839A-page 6  2017 Microchip Technology Inc.

TABLE 1-3: ELECTRICAL CHARACTERISTICS - LDO 1

Electrical Characteristics: VIN = VOUTDC/DC; EN1 = VIN; EN2 = GND; COUT1 = 2.2 µF, IOUT1 = 100 µA; TJ = 25°C,

bold values indicate –40°C TJ  +125°C; unless noted.

Parameter Symbol Min. Typ. Max. Units Conditions

LOWQ = High (Full Power Mode)

Output Voltage Accuracy VOUT

–2.0

—

+2.0

Variation from nominal VOUT

–3.0 +3.0 Variation from nominal VOUT

;

–40°C to +125°C

Output Current Capability IOUT

300

120 —— mA

VIN  1.8V

VIN  1.5V

Load Regulation VOUT/VOUT —0.17

0.3

1.5 %IOUT = 100 µA to 150 mA

IOUT = 100 µA to 300 mA

Current Limit ILIM 350 500 700 mA VOUT = 0V

Ripple Rejection PSRR

—dB

f = up to 1 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

f = 20 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

Output Voltage Noise VN—30—µV

RMS

COUT = 2.2 µF; CBYP = 0.1 µF;

10 Hz to 100 KHz

LOWQ = Low (Light Load Mode)

Output Voltage Accuracy VOUT

–3.0

—

+3.0

Variation from nominal VOUT

–4.0 +4.0 Variation from nominal VOUT

;

–40°C to +125°C

Load Regulation VOUT/VOUT —0.2

0.5

1.0 %I

OUT = 100 µA to 10 mA

Current Limit ILIM 50 85 125 mA VOUT = 0V

Ripple Rejection PSRR —

—dB

f = up to 1 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

f = 20 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

 2017 Microchip Technology Inc. DS20005839A-page 7

MIC2800

TABLE 1-4: ELECTRICAL CHARACTERISTICS - LDO2

Electrical Characteristics: VIN = VOUTLDO2 + 1.0V; EN1 = GND; EN2 = VIN; COUT2 = 2.2 µF; IOUTLDO2 = 100 µA; TJ

= 25°C, bold values indicate–40°C TJ  +125°C; unless noted.

Parameter Symbol Min. Typ. Max. Units Conditions

LOWQ = High (Full Power Mode)

Output Voltage Accuracy VOUT

–2.0

—

+2.0

Variation from nominal VOUT

–3.0 +3.0 Variation from nominal VOUT

;

–40°C to +125°C

Line Regulation (VOUT/VOUT)

/VIN

—0.02

0.3

0.6 %/V VIN = VOUT +1V to 5.5V;

IOUT = 100 µA

Load Regulation VOUT/VOUT —

0.20

0.25

0.40 1.5 %

IOUT = 100 µA to 150 mA

IOUT = 100 µA to 200 mA

IOUT = 100 µA to 300 mA

Dropout Voltage VDO —

142 300 mV

IOUT = 150 mA; VOUTLDO2 >= 2.7V

IOUT = 200 mA; VOUTLDO2 >= 2.7V

IOUT = 300 mA; VOUTLDO2 >= 2.7V

Ripple Rejection PSRR —

—dB

f = up to 1 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

40 f = 20 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

Current Limit ILIM 400 550 850 mA VOUT = 0V

Output Voltage Noise VN—25—µV

RMS

COUT = 2.2 µF; CBYP = 0.1 µF;

10 Hz to 100 KHz

LOWQ = Low (Light Load Mode)

Output Voltage Accuracy VOUT

–3.0

—

+3.0

Variation from nominal VOUT

–4.0 +4.0 Variation from nominal VOUT

;

–40°C to +125°C

Line Regulation (VOUT/VOUT)

/VIN

—0.02

0.3

0.6 %/V VIN = VOUT +1V to 5.5V

Load Regulation VOUT/VOUT —0.21.0 %I

OUT = 100 µA to 10 mA

Dropout Voltage VDO —2235

50 mV IOUT = 10 mA; VOUTLDO2 >= 2.7V

Ripple Rejection PSRR —

—dB

f = up to 1 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

f = 20 kHz; COUT = 2.2 µF;

CBYP = 0.1 µF

Current Limit ILIM 50 85 125 mA VIN = 2.7V; VOUT = 0V

MIC2800

DS20005839A-page 8  2017 Microchip Technology Inc.

TABLE 1-5: TEMPERATURE SPECIFICATIONS (Note 1)

Parameters Sym. Min. Typ. Max. Units Conditions

Temperature Ranges

Storage Temperature Range TS–65 — +150 °C

Lead Temperature — — — +260 °C Soldering, 10 sec.

Junction Temperature TJ–40 — +125 °C

Package Thermal Resistance

16-Ld QFN JA —45 —°C/W

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable

junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the

maximum allowable power dissipation will cause the device operating junction temperature to exceed the

maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.

 2017 Microchip Technology Inc. DS20005839A-page 9

MIC2800

2.0 TYPICAL PERFORMANCE CURVES

FIGURE 2-1: DC/DC 1.87VOUT Efficiency.

FIGURE 2-2: DC/DC 1.8VOUT Efficiency.

FIGURE 2-3: DC/DC Current Limit vs.

Temperature.

FIGURE 2-4: DC/DC Enable Threshold

vs. Supply Voltage.

FIGURE 2-5: DC/DC Turn-on Delay vs.

Supply Voltage.

FIGURE 2-6: DC/DC LowQ Mode Power

Supply Rejection Ratio vs. Input Voltage.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

50%

55%

60%

65%

70%

75%

80%

85%

90%

95%

100%

0 100 200 300 400 500 600

Efficiency (%)

Output Current (mA)

4.2V

3.6V

L=2.2 µH

COUT=2.2 µF

/LowQ=VIN

50%

55%

60%

65%

70%

75%

80%

85%

90%

95%

100%

0 200 400 600

Efficiency (%)

Output Current (mA)

4.2V

3.6V

L=2.2 µH

COUT=2.2 µF

/LowQ=VIN

200

400

600

800

1000

1200

1400

-40 -20 0 20 40 60 80 100 120

Current Limit (mA)

Temperature (ºC)

EN1=EN2=VIN

/LowQ=VIN

COUT=2.2 µF

CBYP=0.01 µF

500

550

600

650

700

750

800

850

900

950

1000

2.7 3.4 4.1 4.8 5.5

Enabel Threshold (mV)

Supply Voltage (V)

OFF

/LowQ=VIN

COUT=2.2 µF

50.0

55.0

60.0

65.0

70.0

75.0

80.0

85.0

90.0

95.0

100.0

2.7 3.2 3.7 4.2 4.7 5.2

Turn-On Delay (µSec)

Supply Voltage (V)

COUT=2.2 µF

/LowQ=VIN

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

3.6V

4.2V

IOUT=50 mA

VOUT=1.8V

COUT=2.2 µF

MIC2800

DS20005839A-page 10  2017 Microchip Technology Inc.

FIGURE 2-7: DC/DC LowQ Mode Power

Supply Rejection Ratio vs. Output Current.

FIGURE 2-8: DC/DC LowQ Mode LDO

Current Limit vs. Supply Voltage.

FIGURE 2-9: DC/DC LowQ Mode LDO

Output Voltage vs. Output Current.

FIGURE 2-10: DC/DC LowQ Mode LDO

Output Noise Spectral Density.

FIGURE 2-11: Power Supply Rejection

Ratio (LDO1 LowQ Mode).

FIGURE 2-12: Power Supply Rejection

Ratio (LDO1 Normal Mode).

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

0 µA

100 µA

50 mA

=3.6V

OUT

=1.8V

100

150

200

250

2.7 3.7 4.7

VOUT=1.8V

COUT=2.2 µF

Volta

(

)

Current Limit (mA)

1.84

1.85

1.86

1.87

1.88

1.89

1.90

0 102030405060708090100

Output Votage (V)

Output Current (mA)

VIN=3.6V

VOUT=1.87V

COUT=2.2 µF

/LowQ=GND

0.001

0.01

0.1

10 1,000 100,000 10,000,000

Noise µV/¥Hz

Frequency (Hz)

VIN=4.2V

COUT=2.2 µF

VOUT=1.87V

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

100 µA

50 mA

VIN=4.2V

VOUT=1.2V

COUT=2.2 µF

CBYP=0.1µF

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

100 µA

50 mA

150 mA

VIN=4.2V

VOUT=1.2V

COUT=2.2 µF

CBYP=0.1 µF

/LowQ=VIN

 2017 Microchip Technology Inc. DS20005839A-page 11

MIC2800

FIGURE 2-13: Power Supply Rejection

Ratio (LDO2 LowQ Mode).

FIGURE 2-14: Power Supply Rejection

Ratio (LDO2 Normal Mode).

FIGURE 2-15: LDO2 Output Voltage vs.

Temperature.

FIGURE 2-16: Ground Current vs.

Temperature.

FIGURE 2-17: Ground Current vs. Output

Current.

FIGURE 2-18: LDO2 Dropout Voltage vs.

Output Current.

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

100 µA

10 mA

50 mA

VIN=4.2V

VOUT=2.8V

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=GND

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1,000 10,000 100,000 1,000,000

Frequency (Hz)

100 µA

50 mA

150 mA

300 mA

VIN=3.6V

VOUT=2.8V

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=VIN

2.50

2.55

2.60

2.65

2.70

2.75

2.80

2.85

2.90

2.95

3.00

-40 -20 0 20 40 60 80 100 120

Output Voltage (V)

Temperature (C)

VOUT=2.8V

VIN=VOUT+1V

EN1=GND

EN2=VIN

COUT=2.2 µF

CBYP=0.01 µF

-40 -20 0 20 40 60 80 100 120

Ground Current (µA)

Temperature (C)

10 µA

100 mA

300 mA

VOUT=2.8V

VIN=Vout+1V

EN1=GND

EN2=VIN

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=VIN

0 50 100 150 200 250 300

Ground Current (µA)

Output Current (mA)

VOUT=2.8V

VIN=VOUT+1V

COUT=2.2 µF

CBYP=0.01 µF

100

120

140

0 50 100 150 200 250 300

Dropout Voltage (mV)

Output current (mA)

VOUT = 2.8V

/LowQ=VIN

COUT= 2.2 µF

CBYP= 0.01 µF

MIC2800

DS20005839A-page 12  2017 Microchip Technology Inc.

FIGURE 2-19: LDO 2 Dropout Voltage vs.

Temperature.

FIGURE 2-20: Dropout Characteristics.

FIGURE 2-21: LDO1 Output Noise Spectral

Density.

FIGURE 2-22: LDO2 Output Noise Spectral

Density.

FIGURE 2-23: DC/DC Load Transient

PWM Mode.

FIGURE 2-24: DC/DC Line Transient PWM

Mode.

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0.14

0.16

0.18

0.20

-40 -20 0 20 40 60 80 100 120

Dropout Voltage (V)

Temperature (ºC)

300 mA

150 mA

100 mA

50 mA

20 mA

VOUT=2.8V

VIN=VOUT+1V

COUT=2.2 µF

CBYP=0.01 µF

LOWQ=VIN

0.5

1.5

2.5

0123456

Output Voltage (V)

Supply Voltage (V)

100 mA

150 mA

300 mA

COUT=2.2 µF

CBYP=0.01 µF

/LOWQ=VIN

0.001

0.01

0.1

10 1,000 100,000 10,000,000

Noise µV/¥Hz

Frequency (Hz)

VIN=4.2V

COUT=2.2 F

CBYP=0.1 µF

VOUT=1.2V

/LowQ=VIN

0.001

0.01

0.1

100

10 1,000 100,000 10,000,000

Noise µV/¥Hz

Frequency (Hz)

VIN=4.2V

VOUT=2.8V

COUT=2.2 µF

CBYP=0.01 µF

LOWQ=VIN

Output Voltage

AC Coupled

(100 mV/div) Output Current

(200 mA/div)

Time (20µs/div)

VOUT=1.8V

VIN=VOUT+1V

/LowQ=VIN

COUT=2.2 µF

CBYP=0.01µF

400 mA

10 mA

VOUT=1.87V

VIN=VOUT+1V

IOUT=100 mA

COUT=2.2 µF

CBYP=0.01 μF

/LowQ=VIN

Input Voltage

(1 V/div)

Output Voltage

AC Coupled

(100 mV/div)

Time (20 µs/div)

 2017 Microchip Technology Inc. DS20005839A-page 13

MIC2800

FIGURE 2-25: Enable Transient PWM

Mode.

FIGURE 2-26: DC/DC Load Transient

LowQ Mode.

FIGURE 2-27: DC/DC Line T ransient LowQ

Mode.

FIGURE 2-28: Enable Transient LowQ

Mode.

FIGURE 2-29: LDO2 Load Transient

Normal Mode.

FIGURE 2-30: LDO Load Transient LowQ

Mode.

Enable Voltage

(500 mV/div)

VOUT

(500 mV/div)

Time (40 µs/div)

VOUT=1.8V

VIN=3.6V

IOUT=300 mA

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=VIN

Output Voltage

AC Coupled

(20 mV/div) Output Current

(20 mA/div)

50 mA

Time (10 µs/div)

VOUT=1.8V

VIN=VOUT+1V

/LowQ=GND

COUT=2.2 µF

CBYP=0.01 µF

100 uA

VOUT=1.87V

VIN=VOUT+1V

IOUT=10 mA

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=GND

Input Voltage

(1 V/div)

Output Voltage

AC Coupled

(50 mV/div)

Time (20 µs/div)

VOUT=1.8V

VIN=EN1=3.8V

IOUT=100 µA

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=GND

Supply Voltage &

Enable Voltage

(2 V/div)

Vout

(500 mV/div)

Time (20 µs/div)

VOUT=2.8V

VIN=3.6V

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=VIN

Output Voltage

AC Coupled

(100 mV/div)

Output Current

(100 mV/div)

Time (4 µs/div)

300 mA

100 uA

VOUT=2.8V

VIN=VOUT+1V

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=GND

Output Voltage

AC Coupled

(50m V/div)

Output Current

(25 mA/div)

Time (200 µs/div)

50 mA

100 uA

MIC2800

DS20005839A-page 14  2017 Microchip Technology Inc.

FIGURE 2-31: LDO2 Line T ransient Normal

Mode.

FIGURE 2-32: LDO2 Line Transient LowQ

Mode.

FIGURE 2-33: DC/DC LowQ Mode to PWM

Mode Transition.

FIGURE 2-34: DC/DC PWM Mode to LowQ

Mode Transition.

FIGURE 2-35: DC/DC PWM Waveform.

FIGURE 2-36: POR Behavior, EN1 = High,

Low-to-High Transition on EN2.

VOUT=1.87V

IOUT=100 mA

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=VIN

Input Voltage

(1 V/div)

Output Voltage

AC Coupled

(50 mV/div)

Time (20 µs/div)

5.5 V

4 V

VOUT=1.87V

IOUT=10 mA

COUT=2.2 µF

CBYP=0.01 µF

/LowQ=GND

Input Voltage

(1 V/div)

VOUT

AC Coupled

(50 mV/div)

Time (40 µs/div)

5.5 V

4 V

Time (100 µs/div)

LowQ Voltage

(1 V/div)

Output Voltage

AC Coupled

(50 mV/div)

VIN=3.3V

VOUT=1.8V

CBYP=0.01 µf

COUT=2.2 µF+100 nF+10 µF

IOUT = 50 mA

Time (100 µs/div)

LowQ Voltage

(1 V/div)

Output Voltage

AC Coupled

(50 mV/div)

VIN=3.3V

VOUT=1.8V

CBYP=0.01 µf

COUT=2.2 µF+100 nF+10 µF

IOUT = 50 mA

CBYP=0.01 µF

/LowQ=VIN

L=2.2 µH

LowQ Voltage

(2 V/div)

Output Voltage

AC Couple

(10 mV/div)

Time (400 µs/div)

VOUT=1.8V

VIN=4V

COUT=2.2 µF

 2017 Microchip Technology Inc. DS20005839A-page 15

MIC2800

FIGURE 2-37: POR Behavior, EN2 = High,

Low-to-High Transition on EN1.

FIGURE 2-38: CSET Pin Voltage and POR

Delay Time Behavior for Correct Sequencing.

FIGURE 2-39: ESR vs. Load - LDO.

FIGURE 2-40: ESR vs. Load - LDO1.

FIGURE 2-41: ESR vs. Load - LDO2.

0.1

100

0 50 100 150

ESR (mȍ)

Output Current (mA)

STABLE AREA

0.1

100

0 50 100 150

ESR (mȍ)

Output Current (mA)

STABLE AREA

0.1

100

0 50 100 150

ESR (mȍ)

Output Current (mA)

STABLE AREA

MIC2800

DS20005839A-page 16  2017 Microchip Technology Inc.

NOTES:

 2017 Microchip Technology Inc. DS20005839A-page 17

MIC2800

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

3.1 LOWQ

The LOWQ pin provides a logic level control between

the internal PWM mode and the low noise linear

regulator mode. With LOWQ pulled low (<0.2V),

quiescent current of the device is greatly reduced by

switching to a low noise linear regulator mode that has

a typical IQ of 20 µA (LDO2 ON only). In LowQ mode

the LDO output can deliver 60 mA of current to the

output. By placing LOWQ high (>1V), the device

transitions into a constant frequency PWM buck

regulator mode. This allows the device the ability to

efficiently deliver up to 600 mA of output current at the

same output voltage, and to support load transients

generated by processor activity.

LOWQ mode also limits the output load of both LDO1

and LDO2 to 10 mA.

The ESD protection of the LOWQ pin is free from

clamping diodes to the input supply rails, therefore the

LOWQ signal can be driven by host I/Os under backup

power domains without the risk of parasitic leakage,

even if the main power to the MIC2800 is removed.

3.2 BIAS

The BIAS pin supplies the power to the internal control

and reference circuitry. The bias is powered from AVIN

through an internal 6 resistor. A small 0.1 µF ceramic

capacitor is required for bypassing.

3.3 SGND

Signal ground (SGND) is the ground path for the

biasing and control circuitry. The current loop for the

signal ground should be as small as possible.

3.4 PGND

Power ground (PGND) is the ground path for the high

current PWM mode. The current loop for the power

ground should be as small as possible.

TABLE 3-1: PIN FUNCTION TABLE

Pin Number

16-Pin QFN Pin Name Description

1LOWQLOWQ Mode. Active Low Input. Logic High = Full Power Mode; Logic Low = LOWQ

Mode; Do not leave floating.

2 BIAS Internal circuit bias supply. It must be decoupled to signal ground with a 0.1 µF

capacitor and should not be loaded.

3 SGND Signal ground

4 PGND Power ground

5 SW Switch (Output): Internal power MOSFET output switches.

IN Supply Input – DC/DC. Must be tied to PIN7 externally.

IN Supply Input – LDO2. Must be tied to PIN6 externally.

8 LDO2 Output of LDO regulator 2.

9 FB Feedback. Input to the error amplifier for DC/DC converter. For fixed output voltages

connect directly to VOUT and an internal resistor network sets the output voltage.

10 LDO LDO Output: Connect to VOUT of the DC/DC for LOWQ mode operation.

11 LDO1 Output of LDO regulator 1.

12 POR Power-on Reset Output: Open-drain output. Active low indicates an output

undervoltage condition on either one of the three regulated outputs.

13 CSET Delay Set Input: connect external capacitor to GND to set the internal delay for the

POR output. When left open, there is a minimum delay. This pin cannot be grounded.

14 CBYP Reference Bypass: connect external 0.1 µF to GND to reduce output noise. May be left

open.

15 EN1 Enable Input (DC/DC and LDO1). Active High Input. Logic high = On; Logic low = Off;

do not leave floating.

16 EN2 Enable Input (LDO 2). Active High Input. Logic high = On; Logic low = Off; do not leave

floating.

MIC2800

DS20005839A-page 18  2017 Microchip Technology Inc.

3.5 SW

The switch (SW) pin is the common connection

between the internal power MOSFETs and connects

directly to the inductor. Due to the high-speed switching

on this pin, the switch node should be routed away from

sensitive nodes.

3.6 VIN

Two input voltage pins provide power to the switch

mode DC/DC and LDO2 separately. The LDO1 input

voltage is provided by the DC/DC LDO pin. VIN

provides power to the LDO section and the bias

through an internal 6 resistor. Both VIN pins must be

tied together.

For the switch mode DC/DC regulator, VIN provides

power to the MOSFET along with current limiting

sensing. Due to the high switching speeds, a 4.7 µF

minimum ceramic capacitor is recommended close to

VIN and the power ground (PGND) pin for bypassing.

3.7 LDO2

Regulated output voltage of LDO2. Power is provided

by VIN. The minimum recommended output

capacitance is 2.2 µF ceramic.

3.8 FB

Connect the feedback pin to VOUT for fixed output

voltage versions. For adjustable output version, an

external resistor divider is used to program the output

voltage.

3.9 LDO

The LDO pin is the output of the LOWQ mode linear

regulator and should be connected to the output of the

DC/DC converter. In LOWQ mode (LOWQ < 0.2V), the

LDO supplies the output current and supports the

output voltage in place of the DC/DC stage. In PWM

mode (LOWQ > 1V) the LDO pin provides power to

LDO1.

3.10 LDO1

Regulated output voltage of LDO1. Input power is

provided by the DC/DC switching regulator. The

minimum recommended output capacitance is 2.2 µF

ceramic.

3.11 Power-on Reset (POR)

The Power-on Reset (POR) output is an open-drain

N-channel device, requiring a pull-up resistor to either

the input voltage or output voltages for proper voltage

levels. The POR output has a delay time that is

programmable with a capacitor from the CSET pin to

ground. The delay time can be programmed to be as

long as 1 second.

In steady-state conditions, the POR output is high if at

least one channel (LDO2 and DC-DC, LDO1) is

enabled and has reached regulation. This is equivalent

to performing a logic OR operation on the status of the

output voltages.

If any of the outputs is subsequently pulled out of

regulation (e.g., due to a momentary overload), the

POR signal goes low and it remains low as long as the

affected output is out of regulation. If the affected

output returns in regulation, POR is asserted high after

the delay time programmed with the capacitor at the

CSET pin.

The ESD protection of the POR pin is free from

clamping diodes to the input supply rails. Therefore, the

POR signal can be asserted to host I/Os under backup

power domains or pulled up to backup power sources

without the risk of parasitic leakage, even if the main

power to the MIC2800 is removed.

3.12 CSET

The CSET pin is a current source output that charges a

capacitor that sets the delay time for the Power-on

Reset output from low-to-high. The delay for POR high-

to-low (detecting an undervoltage on any of the

outputs) is always minimal. The current source of

1.25 µA charges a capacitor up from 0V. When the

capacitor reaches 1.25V, the output of the POR is

allowed to go high. The delay time in microseconds is

equal to the CSET capacitor value in picofarads.

EQUATION 3-1:

3.13 CBYP

The internal reference voltage can be bypassed with a

capacitor to ground to reduce output noise and

increase power supply rejection (PSRR). A quick-start

feature allows for quick turn on of the output voltage.

The recommended nominal bypass capacitor is 0.1 µF,

but it can be increased, which will also result in an

increase to the start-up time.

3.14 EN1, EN2

Both enable inputs are active high, requiring 1.0V for

guaranteed logic HIGH level detection (VIH=1.0V MIN).

EN1 provides logic control of both the DC/DC regulator

and LDO1. EN2 provides logic control for LDO2 only.

The enable inputs are CMOS logic and cannot be left

floating.

PORDelay



s CSET pF=

 2017 Microchip Technology Inc. DS20005839A-page 19

MIC2800

The enable pins provide logic level control of the

specified outputs. When both enable pins are in the

OFF state, supply current of the device is greatly

reduced (typically < 1 µA). When the DC/DC regulator

is in the OFF state, the output drive is placed in a

“tri-stated” condition, where both the high side

P-channel MOSFET and the low-side N-channel are in

an OFF or nonconducting state. Do not drive either of

the enable pins above the supply voltage.

MIC2800

DS20005839A-page 20  2017 Microchip Technology Inc.

4.0 APPLICATION INFORMATION

The MIC2800 is a digital power management IC with a

single integrated buck regulator and two low dropout

regulators. LDO1 is a 300 mA low dropout regulator

that uses power supplied by the onboard buck

regulator. LDO2 is a 300 mA low dropout regulator

using the supply from the input pin. The buck regulator

is a 600 mA PWM power supply that utilizes a LOWQ

light load mode to maximize battery efficiency in light

load conditions. This is achieved with a LOWQ control

pin that, when pulled low, shuts down all the biasing

and drive current for the PWM regulator, drawing only

20 µA of operating current. This allows the output to be

regulated through the LDO output, capable of providing

60 mA of output current. This method has the

advantage of producing a clean, low-current,

ultra-low-noise output in LOWQ mode. During LOWQ

mode, the SW node becomes high-impedance,

blocking current flow. Other methods of reducing

quiescent current, such as Pulse Frequency

Modulation (PFM) or bursting techniques may create

large-amplitude, low-frequency ripple voltages that can

be detrimental to system operation.

When more than 60 mA is required, the LOWQ pin can

be forced high, causing the MIC2800 to enter in PWM

mode. In this case, the LDO output makes a “hand-off”

to the PWM regulator with virtually no variation in

output voltage. The LDO output then turns off, allowing

up to 600 mA of current to be efficiently supplied

through the PWM output to the load.

4.1 Output Capacitor

LDO1 and LDO2 outputs require at least a 2.2 µF

ceramic output capacitor for stability. The DC/DC

switch mode regulator requires at least a 2.2 µF

ceramic output capacitor to be stable. All output

capacitor values can be increased to improve transient

response. X7R/X5R dielectric type ceramic capacitors

are recommended because of their temperature

performance. X7R-type capacitors change capacitance

by 15% over their operating temperature range and are

the most stable type of ceramic capacitors. Z5U and

Y5V dielectric capacitors change value by as much as

50% to 60% respectively over their operating

temperature ranges and are therefore not

recommended.

4.2 Input Capacitor

A minimum 1 µF ceramic is recommended on the VIN

pin for bypassing. X5R or X7R dielectrics are

recommended for the input capacitor. Y5V dielectrics

lose most of their capacitance over temperature and

are therefore, not recommended. A minimum 1 µF is

recommended close to the VIN and PGND pins for high

frequency filtering. Smaller-case-size capacitors are

recommended due to their lower ESR and ESL. The

value of the input capacitor can be increased as

needed to better suppress the input ripple generated by

the DC/DC converter.

4.3 Inductor Selection

The MIC2800 is designed for use with a 2.2 µH

inductor. Proper selection should ensure the inductor

can handle the maximum average and peak currents

required by the load. Maximum current ratings of the

inductor are generally given in two methods;

permissible DC current and saturation current.

Permissible DC current can be rated either for a 40°C

temperature rise or a 10% to 20% loss in inductance.

Ensure that the inductor selected can handle the

maximum operating current. When saturation current is

specified, make sure that there is enough margin that

the peak current will not saturate the inductor. Peak

inductor current can be calculated as follows:

EQUATION 4-1:

4.4 POR Delay Time

The POR signal also goes low for the duration of the

delay time given by Eq. 3.1 when only one of the enable

inputs (EN1, EN2) transitions from low to high, with the

other being already high and the corresponding output

being in regulation. This is shown in Fig. 2-36 and Fig.

2-37. At the low-to-high transition of either enable input,

the CSET pin capacitor is discharged to ground, and the

POR delay time is restarted.

At start-up, in order to prevent a momentary high glitch

of the POR signal between the first and the second

enable, it is recommended to set the POR delay time

longer than the maximum delay expected between the

enable signals plus the turn-on time tTURN-ON.

For a given delay between the enable signals, an

example of correct POR delay time design is shown in

Fig. 2-38. It can be seen that the CSET voltage is reset

to ground by the latter low-to-high enable transition

before it reaches the VTHCSET voltage (1.25V TYP).

IPK IOUT

VOUT 1VOUT

VIN

----------------

–









------------------------------------------------+=

 2017 Microchip Technology Inc. DS20005839A-page 21

MIC2800

NOTES:

MIC2800

DS20005839A-page 22  2017 Microchip Technology Inc.

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

16-lead QFN Example

<MC>1729Y

YG4J

256

Refer to the Product Identification System

section for information on the output voltage

for each device.

Part Number Code

MIC2800-A4SYML-TR YA4S

MIC2800-D24MYML-TR YD24M

MIC2800-D2FMYML-TR YD2FM

MIC2800-G2SYML-TR YG2S

MIC2800-G4JYML-TR YG4J

MIC2800-G4KYML-TR YG4K

MIC2800-G4MYML-TR YG4M

MIC2800-G4SYML-TR YG4S

MIC2800-G7SYML-TR YG7S

MIC2800-G1JJYML-TR G1JJ

MIC2800-G1JSYML-TR G1JS

MIC2800-GFMYML-TR YGFM

MIC2800-GFSYML-TR YGFS

MIC2800-G4SYML-TR YG4S

Legend: XX...X Product code or customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Pb-free JEDEC® designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

, , Pin one index is identified by a dot, delta up, or delta down (triangle

mark).

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information. Package may or may not include

the corporate logo.

Underbar (_) and/or Overbar () symbol may not be to scale.

 2017 Microchip Technology Inc. DS20005839A-page 23

MIC2800

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging.

MIC2800

DS20005839A-page 24  2017 Microchip Technology Inc.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging.

 2017 Microchip Technology Inc. DS20005839A-page 25

MIC2800

NOTES:

MIC2800

DS20005839A-page 26  2017 Microchip Technology Inc.

 2017 Microchip Technology Inc. DS20005839A-page 27

MIC2800

APPENDIX A: REVISION HISTORY

Revision A (October 2017)

Original Release of this Document.

MIC2800

DS20005839A-page 28  2017 Microchip Technology Inc.

NOTES:

 2017 Microchip Technology Inc. DS20005839A-page 29

MIC2800

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.

Examples:

a) MIC2800-A4SYML-TR: Digital Power Management

IC 2 MHz, 600 mA DC/DC

with Dual 300 mA/300 mA

Low VIN LDOs,

Adjustable/1.2V/3.3V

Output Voltage,

–40°C to +125°C, 16LD QFN

Package, Tape and Reel

b) MIC2800-D24MYML-TR: Digital Power Management

IC 2 MHz, 600 mA DC/DC

with Dual 300 mA/300 mA

Low VIN LDOs, 1.87V/1.2V/2.8V

Output Voltage, –40°C to +125°C

16LD QFN Package, Tape and

Reel

c) MIC2800-D2FMYML-TR: Digital Power Management

IC 2 MHz, 600 mA DC/DC

with Dual 300 mA/300 mA

Low VIN LDOs, 1.87V/1.5V/2.8V

Output Voltage, –40°C to +125°C

16LD QFN Package, Tape and

Reel

d) MIC2800-G2SYML-TR: Digital Power Management

IC 2 MHz, 600 mA DC/DC

with Dual 300 mA/300 mA

Low VIN LDOs, 1.8V/1.05V/3.3V

Output Voltage, –40°C to +125°C

16LD QFN Package, Tape and

Reel

e) MIC2800-G4JYML-TR: Digital Power Management

IC 2 MHz, 600 mA DC/DC

with Dual 300 mA/300 mA

Low VIN LDOs, 1.8V/1.2V/2.5V

Output Voltage, –40°C to +125°C

16LD QFN Package, Tape and

Reel

PART NO. X

Package

Device

Device: MIC2800: Digital Power Management IC 2 MHz,

600 mA DC/DC with Dual 300 mA/300 mA

Low VIN LDOs

Output Voltages:

(DC/DC, LDO1,

LDO2)

A4S = Adjustable/1.2V/3.3V

D24M= 1.87V/1.2V/2.8V

D2FM= 1.87V/1.5V/2.8V

G2S = 1.8V/1.05V/3.3V

G4J =1.8V/1.2V/2.5V

G4K =1.8V/1.2V/2.6V

G4M=1.8V/1.2V/2.8V

G4S =1.8V/1.2V/3.3V

G7S = 1.8V/1.575V/3.3V

G1JJ= 1.8V/1.25V/2.5V

G1JS= 1.8V/1.25V/3.3V

G4S =1.8V/1.2V/3.3V

Temperature: Y = Pb-Free with Industrial Temperature Grade

(–40°C to +125°C)

Package: ML = 16-lead, 3x3 mm QFN, 0.85 mm thickness

Tape and Reel: TR = Tape and Reel

Temperature

(1)

–

Tape and Reel Option

Note 1: Tape and Reel identifier only appears in the

catalog part number description. This identifier is

used for ordering purposes and is not printed on

the device package. Check with your Microchip

Sales Office for package availability with the

Tape and Reel option.

–

Output

Voltage

MIC2800

DS20005839A-page 30  2017 Microchip Technology Inc.

NOTES:

 2017 Microchip Technology Inc. DS20005839A-page 31

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights unless otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, AnyRate, AVR,

AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory,

CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,

KEELOQ logo, Kleer, LANCheck, LINK MD, maXStylus,

maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,

OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip

Designer, QTouch, RightTouch, SAM-BA, SpyNIC, SST, SST

Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered

trademarks of Microchip Technology Incorporated in the U.S.A.

and other countries.

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trademarks of Microchip Technology Incorporated in the U.S.A.

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any

Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo,

CodeGuard, CryptoAuthentication, CryptoCompanion,

CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average

Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial

Programming, ICSP, Inter-Chip Connectivity, JitterBlocker,

KleerNet, KleerNet logo, Mindi, MiWi, motorBench, MPASM, MPF,

MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach,

Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,

PICtail, PureSilicon, QMatrix, RightTouch logo, REAL ICE, Ripple

Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI,

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ZENA are trademarks of Microchip Technology Incorporated in the

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All other trademarks mentioned herein are property of their

respective companies.

ISBN: 978-1-5224-2210-5

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

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mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

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headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’ s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, micro perip hera ls, n onvolat ile memory and

analog products . In add ition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

QUALITYMANAGEMENTS

YSTEM

CERTIFIEDBYDNV

== ISO/TS16949==

DS20005839A-page 32  2017 Microchip Technology Inc.

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Worldwide Sales and Service

10/10/17