IPB80N04S3-04 - Infineon Technologies

IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

OptiMOS®-T Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current1) IDTC=25°C, VGS=10V 80 A

TC=100 °C,

VGS=10 V2) 80

Pulsed drain current2) ID,pulse TC=25 °C 320

Avalanche energy, single pulse EAS ID=80 A 290 mJ

Gate source voltage VGS ±20 V

Power dissipation Ptot TC=25 °C 136 W

Operating and storage temperature Tj, Tstg -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Value

VDS 40 V

RDS(on),max (SMD version) 3.8 mΩ

ID80 A

Product Summary

PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2

Type Package Marking

IPB80N04S3-04 PG-TO263-3-2 3N0404

IPI80N04S3-04 PG-TO262-3-1 3N0404

IPP80N04S3-04 PG-TO220-3-1 3N0404

Rev. 1.0 page 1 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics2)

Thermal resistance, junction - case RthJC - - 1.1 K/W

Thermal resistance, junction -

ambient, leaded RthJA --62

SMD version, device on PCB RthJA minimal footprint - - 62

6 cm2 cooling area3) --40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 40 - - V

Gate threshold voltage VGS(th) VDS=VGS, ID=90 µA 2.1 3.0 4.0

Zero gate voltage drain current IDSS

VDS=40 V, VGS=0 V,

Tj=25 °C --1µA

VDS=40 V, VGS=0 V,

Tj=125 °C2) - - 100

Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10 V, ID=80 A - 3.5 4.1 mΩ

VGS=10 V, ID=80 A,

SMD version - 3.2 3.8

Values

Rev. 1.0 page 2 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

Parameter Symbol Conditions Unit

min. typ. max.

namic characteristics2)

Input capacitance Ciss - 4000 5200 pF

Output capacitance Coss - 1100 1400

Reverse transfer capacitance Crss - 170 250

Turn-on delay time td(on) -20-ns

Rise time tr-12-

Turn-off delay time td(off) -30-

Fall time tf-10-

Gate Char

e Characteristics2)

Gate to source charge Qgs -2230nC

Gate to drain charge Qgd -1526

Gate charge total Qg-6080

Gate plateau voltage Vplateau - 5.6 - V

Reverse Diode

Diode continous forward current2) IS- - 80 A

Diode pulse current2) IS,pulse - - 320

Diode forward voltage VSD

VGS=0 V, IF=80 A,

Tj=25 °C - 0.95 1.3 V

Reverse recovery time2) trr

VR=20 V, IF=IS,

diF/dt=100 A/µs -35-ns

Reverse recovery charge2) Qrr -35-nC

TC=25 °C

Values

VGS=0 V, VDS=25 V,

f=1 MHz

VDD=20 V, VGS=10 V,

ID=80 A, RG=3.5 Ω

VDD=32 V, ID=80 A,

VGS=0 to 10 V

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an RthJC = 1.1K/W the chip is able to carry 141A at 25°C. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

Rev. 1.0 page 3 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

1 Power dissipation 2 Drain current

Ptot = f(TC); VGS ≥ 6 V ID = f(TC); VGS ≥ 6 V

3 Safe operating area 4 Max. transient thermal impedance

ID = f(VDS); TC = 25 °C; D = 0; SMD ZthJC = f(tp)

parameter: tpparameter: D=tp/T

1 µs

10 µs

100 µs

1 ms

100

1000

0.1 1 10 100

VDS [V]

ID [A]

single pulse

0.01

0.05

0.1

0.5

100

10-1

10-2

10-3

10-4

10-5

10-6

101

100

10-1

10-2

10-3

tp [s]

ZthJC [K/W]

100

120

140

160

0 50 100 150 200

TC [°C]

Ptot [W]

100

0 50 100 150 200

TC [°C]

ID [A]

Rev. 1.0 page 4 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID = f(VDS); Tj = 25 °C; SMD RDS(on) = f(ID); Tj = 25 °C; SMD

parameter: VGS parameter: VGS

7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance

ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 80 A; VGS = 10 V; SMD

parameter: Tj

-60 -20 20 60 100 140 180

Tj [°C]

RDS(on) [mΩ]

5 V

5.5 V

6 V

6.5 V

7 V

10 V

120

160

200

240

280

320

360

02468

VDS [V]

ID [A]

5.5 V 6 V

6.5 V

7 V

10 V

0 20 40 60 80 100 120

ID [A]

RDS(on) [mΩ]

-55 °C

25 °C

175 °C

120

160

200

240

280

320

360

2345678

VGS [V]

ID [A]

Rev. 1.0 page 5 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

9 Typ. gate threshold voltage 10 Typ. capacitances

VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz

parameter: ID

11 Typical forward diode characteristicis 12 Typ. avalanche characteristics

IF = f(VSD)IA S= f(tAV)

parameter: Tjparameter: Tj(start)

25 °C

100 °C

150 °C

100

1 10 100 1000

tAV [µs]

IAV [A]

25 °C

175 °C

103

102

101

100

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD [V]

IF [A]

90 µA

900 µA

1.5

2.5

3.5

-60 -20 20 60 100 140 180

Tj [°C]

VGS(th) [V]

Ciss

Coss

Crss

102

103

104

0 5 10 15 20 25 30

VDS [V]

C [pF]

Rev. 1.0 page 6 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

13 Typical avalanche energy 14 Typ. drain-source breakdown voltage

EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA

parameter: ID

15 Typ. gate charge 16 Gate charge waveforms

VGS = f(Qgate); ID = 80 A pulsed

parameter: VDD

gate

gs(th)

g(th)

-60 -20 20 60 100 140 180

Tj [°C]

VBR(DSS) [V]

8 V 32 V

0255075

Qgate [nC]

VGS [V]

80 A

40 A

20 A

200

400

600

800

1000

1200

1400

25 75 125 175

Tj [°C]

EAS [mJ]

Rev. 1.0 page 7 2007-05-03

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IPB80N04S3-04

IPI80N04S3-04, IPP80N04S3-04

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaime

The information given in this document shall in no event be regarded as a guarantee of conditions

or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including

without limitation warranties of non‑infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please

contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information

on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the

express written approval of Infineon Technologies, if a failure of such components can reasonably

be expected to cause the failure of that life-support device or system, or to affect the safety or

effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body, or to support and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of the user or other persons may be

endangered.

Rev. 1.0 page 8 2007-05-03

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IPB80N04S3-04

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Revision History

Version Date Changes

Rev. 1.0 page 9 2007-05-03

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