RFD8P05SM - Intersil Corporation

4-112

File Number

2384.2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

RFD8P05, RFD8P05SM, RFP8P05

8A, 50V, 0.300 Ohm, P-Channel Power

MOSFETs

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA09832.

Features

• 8A, 50V

•r

DS(ON) = 0.300Ω

• UIS SOA Rating Curve

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER PACKAGE BRAND

RFD8P05 TO-251AA D8P05

RFD8P05SM TO-252AA D8P05

RFP8P05 TO-220AB RFP8P05

NOTE: When ordering, use the entirepartnumber. Add the sufﬁx9A

to obtain the TO-252AA variant in tape and reel, i.e.,

RFD8P05SM9A.

JEDEC TO-220AB JEDEC TO-251AA

JEDEC TO-252AA

GATE

DRAIN (FLANGE)

SOURCE

DRAIN SOURCE

DRAIN (FLANGE) GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

Data Sheet July 1999

4-113

Absolute Maximum Ratings TC = 25oC Unless Otherwise Speciﬁed

RFD8P05,

RFD8P05SM, RFP8P05 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS -50 V

Drain to Gate Voltage (RGS = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR -50 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID-8 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM -20 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD48 W

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS See Figure 6

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG -55 to 175 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Speciﬁcations TC = 25oC Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) -50 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 8) -2 - -4 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 1 µA

VDS = 0.8 x Rated BVDSS, TJ = 150oC--25µA

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 8A, VGS = -10V (Figure 7) - - 0.300 Ω

Turn-On Time tON VDD = -25V, ID≈4A, RG = 9.1Ω, RL = 6.25Ω,

VGS = -10V - - 60 ns

Turn-On Delay Time td(ON) -16- ns

Rise Time tr-30- ns

Turn-Off Delay Time td(OFF) -42- ns

Fall Time tf-20- ns

Turn-Off Time tOFF - - 100 ns

Total Gate Charge Qg(TOT) VGS = 0 to -20V VDD = -40V, ID = 8A,RL = 5Ω,

IG(REF) = -0.3mA - - 80 nC

Gate Charge at -5V Qg(-10) VGS = 0 to -10V - - 40 nC

Threshold Gate Charge Qg(TH) VGS = 0 to -2V - - 2 nC

Thermal Resistance Junction to Case RθJC - - 3.125 oC/W

Thermal Resistance Junction to Ambient RθJA TO-251AA, TO-252AA - - 100 oC/W

TO-220AB 62.5 oC/W

Source to Drain Diode Speciﬁcations TC = 25oC Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) VSD ISD = -8A - - -1.5 V

Reverse Recovery Time trr ISD = -8A, dISD/dt = 100A/µs - - 125 ns

NOTE:

2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

RFD8P05, RFD8P05SM, RFP8P05

4-114

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

TC, CASE TEMPERATURE (oC)

25 50 75 100 125 150 175

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

-4

-2

025 50 75 100 125 150

-8

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

-10

-6

175

0.1-1 -10 -100

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

TC = 25oC

DC OPERATION

TJ = 175oC

OPERATION IN THIS

AREA IS LIMITED BY rDS(ON)

100

10.1 1 10 100

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

STARTING TJ = 150oC

STARTING TJ = 25oC

If R = 0

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

If R ≠ 0

tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

IDM

00 -2 -4 -6 -10

-8

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = -6V

VGS = -10V

-8

VGS = -7V

VGS = -5V

VGS = -8V

-20

-12

-16

-4

PULSE DURATION = 80µs

TC = 25oCVGS = -9V

VGS = -4V

DUTY CYCLE = 0.5% MAX

0 -6 -9 -12 -15-3

175oC

PULSE DURATION = 80µs

VDD = 15V

IDS(ON), DRAIN TO SOURCE CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

-55oC

25oC

DUTY CYCLE = 0.5% MAX

RFD8P05, RFD8P05SM, RFP8P05

4-115

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

NOTE: Refer to Application Notes AN7254 and AN7260.

FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT

Typical Performance Curves

Unless Otherwise Speciﬁed

NORMALIZED ON RESISTANCE

3.0

1.0

0.5

0050

TJ, JUNCTION TEMPERATURE (oC)

150

1.5

100

2.0

2.5

200-50

PULSE DURATION = 80µs

VGS = -10V, ID = -8A

DUTY CYCLE =0.5% MAX

-50 500 100 150

1.50

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

200

VGS = VDS,I

D = -250µA

1.25

1.00

0.75

0.50

0.25

NORMALIZED DRAIN TO SOURCE

2.0

1.0

0.5

0050

TJ, JUNCTION TEMPERATURE (oC)

100

1.5

BREAKDOWN VOLTAGE

150 200

ID = -250µA

-50

800

600

400

200

00 -5 -10 -15 -20

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

-25

CISS

CRSS

COSS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGS

-10

-8

-6

-4

-2

-12.5

-25

-37.5

-50

TIME (µs)

VGS, GATE TO SOURCE VOLTAGE (V)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VDD = BVDSS

20 IG(REF)

IG(ACT) 80 IG(REF)

IG(ACT)

GATE

SOURCE

VOLTAGE

RL = 6.25Ω

IG(REF) = 0.3mA

VGS = 10V

VDD = BVDSS

DRAIN TO SOURCE

0.75BVDSS

0.50BVDSS

0.25BVDSS

VOLTAGE

RFD8P05, RFD8P05SM, RFP8P05

4-116

Test Circuits and Waveforms

FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS

FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS

FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VGS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

td(ON)

90%

10%

VDS 90%

td(OFF)

tOFF

90%

50%

10%

PULSE WIDTH

VGS

tON

10%

VGS

VDS

VDD

DUT

Ig(REF)

VDD

Qg(TH)

VGS= -1V

Qg(-5)

VGS= -5V

Qg(TOT)

VGS= -10V

VDS

-VGS

Ig(REF)

RFD8P05, RFD8P05SM, RFP8P05

4-117

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see w eb site http://www.intersil.com

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NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

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100, Rue de la Fusee

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TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

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7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

RFD8P05, RFD8P05SM, RFP8P05