1. Product profile
1.1 General description
An AC Thyristor power switch with very high noise immunity and over-voltage protection
configured for negative gate triggering in a SOT96-1 (SO8) small surface-mountable
plastic package
1.2 Features and benefits
Exclusive negativ e ga te trigge rin g
Full cycle AC conduction
High noise immunity
Remote gate separates the gate driver
from the effects of the load current
Safe clamping of low energy
over-voltage transients
Self-protectiv e tu rn -o n du rin g high
energy voltage transients
Surface-mountable package
Very sensitive gate for lowest gate
trigger current
1.3 Applications
Fan motor circuits
Lower-power highly inductive, resistive
and safety loads
Pump motor circuits
1.4 Quick reference data
ACT102H-600D
AC Thyristor power switch
Rev. 1 — 23 December 2010 Product data sheet
SO8
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak
off-state voltage --600V
IGT gate trigger
current VD=12V; I
T= 100 mA; LD+
G-; Tj=2C; see Figure 7 0.5 - 5 mA
VD=12V; I
T= 100 mA; LD-
G-; Tj=2C; see Figure 7 0.5 - 5 mA
IT(RMS) RMS on-state
current full sine wave; Tamb 100 °C;
see Figure 3; see Figure 1 --0.2A
dVD/dt rate of rise of
off-state voltage VDM =402V; T
j= 125 °C; gate
open circuit; exponential
waveform; see Figure 11
300--V/µs
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 2 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
2. Pinning information
3. Ordering information
VCL clamping voltage ICL = 100 µA; tp=1ms;
Tj125 °C; see Figure 14 650--V
VPP peak pulse
voltage Tj25 °C; non-repetitive,
off-state; see Figure 2 --2kV
VTon-state voltage IT= 0.3 A; see Figure 10 --1.2V
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Tabl e 2. Pinning information
Pin Symbol Description Simplified outline Graphi c sy mbol
1 n.c. not connected
SOT96-1 (SO8)
2 LD Load
3 n.c. not connected
4 n.c. not connected
5GGate
6 CM Common
7 CM Common
8 n.c. not connected
4
5
1
8
001aaj92
4
G
CM
LD
Table 3. Ordering information
Type number Package
Name Description Version
ACT102H-600D SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 3 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDRM repetitive peak off-state voltage - 600 V
IT(RMS) RMS on-state current full sine wave; Tamb 100 °C;
see Figure 3; see Figure 1 -0.2A
ITSM non-repetitive peak on-state
current full sine wave; Tj(init) =2C;
tp=16.7ms -8.8A
full sine wave; Tj(init) =2C;
tp= 20 ms; see Figure 4; see Figure 5 -8A
I2tI
2t for fusing tp= 10 ms; sine-wave pulse - 0.32 A2s
dIT/dt rate of rise of on-state current IT=1A; I
G=20mA; dI
G/dt = 0.2 A/µs - 50 A/µs
IGM peak gate current t = 20 μs-1A
VGM peak gate voltage positive applied gate voltage - 15 V
PGM peak gate power - 2 W
PG(AV) a v erage gate power over any 20 ms period - 0.1 W
Tstg storage temperature -40 150 °C
Tjjunction temperature - 125 °C
VPP peak pulse voltage Tj25 °C; non-repetitive, off-state;
see Figure 2 -2kV
Fig 1. RMS on-state current as a function of solder
point temperature; maximum values Fig 2. Test circuit for inductive and resistive loads
with conditions equivale nt to IEC 61000-4-5
Ta (°C)
50 150100050
003aaf740
0.08
0.16
0.24
IT(RMS)
(A)
0
0.04
0.12
0.20
003aad07
7
LR
150 Ω5 μH
2 Ω
220 Ω
RG
Surge Generator
Surge pulse
IEC 61000-4-5 Standards
RGen
Open Circuit Voltage
DUT
Load Model
1.2 μs/50 μs waveform
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 4 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
Fig 3. Total power dissipation as a function of RM S on-state current; maximum values
f = 50 Hz
Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoid al current cycles; maximum
values
003aaf739
0.08
0.12
0.04
0.16
0.20
Ptot
(W)
0
IT(RMS) (A)
0 0.200.160.08 0.120.04
α
α
α = 180°
003aac804
0
2
4
6
8
10
11010
2103
number of cycles
ITSM
(A)
ITSM
t
IT
Tj(init) = 25 °C max
1/f
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 5 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
5. Thermal characteristics
Fig 5. Non-repetitive peak on-state current as a function of pulse width ; maxi mum va lues
003aaf756
tp (s)
105101
102
104103
102
10
103
ITSM
(A)
1
ITSM
t
IT
Tj(init) = 25 °C max
tp
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient full cycle; see Figure 6 - 150 - K/W
Fig 6. Transient thermal impedance from junction to lead as a function of pulse width
003aaf741
tp (s)
103102103
101102101
102
10
103
Zth(j-a)
(K/W)
1
tp
P
t
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 6 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
IGT gate trigger current VD=12V; I
T= 100 mA; LD+ G-;
Tj=2C; see Figure 7 0.5 - 5 mA
VD=12V; I
T= 100 mA; LD- G-;
Tj=2C; see Figure 7 0.5 - 5 mA
ILlatching current VD=12V; I
G=12mA; T
j=2C;
see Figure 8 --25mA
IHholding current VD=12V; T
j=2C; see Figure 9 --20mA
VTon-stat e vo ltage IT= 0.3 A; see Figure 10 --1.2V
VGT gate trigger voltage VD=12V; I
T=100mA; T
j=25°C --0.9V
VD=12V; I
T=100mA; T
j125 °C 0.15 - - V
IDoff-state current VD=600V; T
j125 °C - - 0.2 mA
VD=600V; T
j25 °C - - 2 µA
dVD/dt rate of rise of off-state
voltage VDM =402V; T
j= 125 °C; gate open
circuit; exponentia l waveform;
see Figure 11
300 - - V/µs
dIcom/dt rate of change of
commutating current VD=400V; T
j= 125 °C; IT(RMS) =1A;
dVcom/dt = 15 V/µs; gate open circuit;
see Figure 12 ; see Figure 13
0.15 - - A/ms
VCL clamping voltage ICL = 100 µA; tp=1ms; T
j125 °C;
see Figure 14 650 - - V
(1) LD+ G-
(2) LD- G-
Fig 7. Normalized gate trigger cu rrent as a function of
junction temperature Fig 8. Normalized latching current as a function of
junction temperature
IGT
IGT(25°C)
Tj (°C)
50 0 150
100
50
1
2
3
0
003aac809
(1)
(2)
(1)
(2)
Tj (°C)
50 150100050
003aac811
1
2
3
0
IL
IL(25°C)
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 7 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
Fig 9. Normalized holding current as a function of
junction temperature Fig 10. On-state current as a function of on-state
voltage
A is dVD/dt at condition Tj °C
B is dVD/dt at condition Tj 125 °C A is dIcom/dt at condition Tj °C
B is dIcom/dt at condition Tj 125 °C
VD = 400 V
Fig 11. Normalized rate of rise of off-state voltage as a
function of junctio n temp erat u re Fi g 12 . Normalized critical rate of ris e of co mmu t a tin g
current as a function of junction temperature
Tj (°C)
50 150100050
003aac810
1
2
3
0
IH
IH(25°C)
003aaf722
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0
VT (V)
IT
(A)
(1) (2) (3)
Tj (°C)
25 12510050 75
003aac813
4
8
12
0
A
B
10
6
2
T
j
(°C)
25 12510050 75
003aac814
4
8
12
0
A
B
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 8 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
A[B] is dIcom/dt at condition B, dVcom/dt
A[spec] is the specified data sheet value of dIcom/dt
turn-off time < 20 ms
Fig 13. Normalized critical rate of change of
commutating current as a fun ctio n o f cr itical
rate of change of commutating volta g e;
minimum values
Fig 14. Normalized clamping voltage (upper limit) as a
function of junction temp erat ure; minimum
values
003aac815
0
0.5
1.0
1.5
2.0
10111010
2
B (V/μs)
A [B]
A [spec]
Tj (°C)
50 150100050
003aac817
0.4
0.8
1.2
0
VCL
VCL(25°C)
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 9 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
7. Package outline
Fig 15. Package outline SOT96-1 (SO8)
UNIT A
max. A1A2A3bpcD
(1) E(2) (1)
eH
ELL
pQZywv θ
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm
inches
1.75 0.25
0.10
1.45
1.25 0.25 0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8 1.27 6.2
5.8 1.05 0.7
0.6
0.7
0.3 8
0
o
o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
1.0
0.4
SOT96-1
X
wM
θ
A
A1
A2
bp
D
HE
Lp
Q
detail X
E
Z
e
c
L
vMA
(A )
3
A
4
5
pin 1 index
1
8
y
076E03 MS-012
0.069 0.010
0.004
0.057
0.049 0.01 0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15 0.05 0.244
0.228
0.028
0.024
0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
S
O8: plastic small outline package; 8 leads; body width 3.9 mm SOT96
-1
99-12-27
03-02-18
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 10 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
8. Soldering
Fig 16. Reflow soldering footprint for SOT96-1 (SO8)
Fig 17. Wave soldering footprint for SOT96-1 (SO8)
sot096-1_
fr
occupied area
solder lands
Dimensions in mm
placement accuracy ± 0.25
1.30
0.60 (8×)
1.27 (6×)
4.00 6.60
5.50
7.00
sot096-1_
fw
solder resist
occupied area
solder lands
Dimensions in mm
board direction
placement accurracy ± 0.25
4.00
5.50
1.30
0.3 (2×)
0.60 (6×)
1.20 (2×)
1.27 (6×)
7.00
6.60
enlarged solder land
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 11 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
9. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
ACT102H-600D v.1 20101223 Product data sheet - -
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 12 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) described in t his document may have changed since this documen t was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specifica t io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed be tween
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whethe r or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for useNXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-crit ical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reaso nably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Char acteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the applicatio n or use by custo m er’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective sp ecification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product spe cification.
ACT102H-600D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 23 December 2010 13 of 14
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automo tive use. It i s neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting from customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors ACT102H-600D
AC Thyristor power switch
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 December 2010
Document identifier: ACT102H-600D
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
12. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
11 Contact information. . . . . . . . . . . . . . . . . . . . . .13