162
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
θ
j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)
SDC03
(Ta=25°C)
Symbol Ratings Unit
VCBO 60±10 V
VCEO 60±10 V
VEBO 6V
IC1.5 A
ICP 2.5 (PW≤1ms, Du≤10%) A
IB0.1 A
PT3 (Ta=25°C) W
Tj150 °C
Tstg –40 to +150 °C
θ
j–a 41.6 °C/W
(Ta=25°C)
Symbol Unit Conditions
ICBO 10
µ
AVCB=50V
IEBO 1.1 3.5 mA VEB=6V
VCEO 50 60 70 V IC=10mA
hFE 2000 5000 12000 VCE=4V, IC=1A
VCE(sat) 1.2 1.4 V
VBE(sat) 1.8 2.2 V
VFEC 1.3 1.8 V IFEC=1A
ton 0.5
µ
sVCC 30V,
tstg 4.0
µ
sIC=1A,
tf1.0
µ
sIB1=–IB2=2mA
fT50 MHz VCE=12V, IE=–0.1A
Cob 25 pF VCB=10V, f=1MHz
IC=1A, IB=2mA
Specification
min typ max
2.5
2.0
1.5
1.0
0.5
0012345
6
I
C
(A)
V
CE
(V)
I
B
=10mA
2mA
1mA
0.6mA
0.4mA
0.3mA
(V
CE
=4V)
10000
5000
1000
500
100
50
0.03 0.05 0.1 0.5 1 2.5
h
FE
I
C
(A)
typ
10000
5000
1000
500
100
50
0.03 0.05 0.1 0.5 1 2.5
h
FE
I
C
(A)
(V
CE
=4V)
T
a
=125°C
75°C
25°C
–30°C
(I
C
/ I
B
=1000)
3
2
1
0
0.2 0.5 1 2.5
V
CE
(sat) (V)
I
C
(A)
Ta=125°C
75°C
25°C
–30°C
3
2
1
0
0.1 0.5 1 5 10 50 100
I
B
(mA)
V
CE
(sat) (A)
I
C
=2A
1A
0.5A
2.5
2.0
1.5
1.0
0.5
00123
I
C
(A)
V
BE
(V)
(V
CE
=4V)
T
a
=125°C
75°C
25°C
–30°C
50
10
5
11000500100501051
θj–a (°C / W)
PW (mS)
3
2
1
00
4
3
2
1
50 100 150
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
P
T
(W)
Ta (°C)
5
1
0.5
0.1
0.053 5 10 50 100
V
CE
(
V
)
I
C
(A)
100µS
1mS
10mS
Single Pulse
Without Heatsink
T
a
=25°C
2
R
1
R
2
15,16
1
4
13,14
3
6
11,12
5
8
9,10
7
NPN Darlington
With built-in avalanche diode
R1: 3.5kΩ typ R2: 200Ω typ
External dimensions
E
• • • SD
Absolute maximum ratings
■Equivalent circuit diagram
Electrical characteristics
