SKB15N60HS
Power Semiconductors 1 Rev 2.3 Oct. 07
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type VCE I
C Eoff Tj Marking Package
SKB15N60HS 600V 15A 200µJ
150°CK15N60HS PG-TO263-3-2
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current
TC = 25°C
TC = 100°C
IC
27
15
Pulsed collector current, tp limited by Tjmax ICpuls 60
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
- 60
Diode forward current
TC = 25°C
TC = 100°C
IF
40
20
Diode pulsed current, tp limited by Tjmax IFpuls 80
A
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
VGE ±20
±30
V
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
tSC 10 µs
Power dissipation
TC = 25°C
Ptot 138 W
Operating junction and storage temperature Tj ,
Tstg
-55...+150
Time limited operating junction temperature for t < 150h Tj(tl) 175
Soldering temperature (reflow soldering, MSL1) - 245
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO263-3-2
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SKB15N60HS
Power Semiconductors 2 Rev 2.3 Oct. 07
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC 0.9
Diode thermal resistance,
junction – case
RthJCD 1.7
Thermal resistance,
junction – ambient
RthJA 62
K/W
SMD version, device on PCB1) RthJA 40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Value
Parameter Symbol Conditions
min. Typ. max.
Unit
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA600 - -
Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
2.8
3.5
3.15
4.00
Diode forward voltage
VF VGE=0V, IF=15A
Tj=25°C
Tj=150°C
-
1.5
1.5
2.0
2.0
Gate-emitter threshold voltage VGE(th) IC=400µA,VCE=VGE 3 4 5
V
Zero gate voltage collector current
ICES VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
-
-
-
-
40
2000
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=15A - 10 S
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
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SKB15N60HS
Power Semiconductors 3 Rev 2.3 Oct. 07
Dynamic Characteristic
Input capacitance Ciss - 810
Output capacitance Coss - 123
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz - 51
pF
Gate charge QGate VCC=480V, IC=15A
VGE=15V
- 80 nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 7 nH
Short circuit collector current1) IC(SC) VGE=15V,tSC≤10µs
VCC ≤ 400V,
Tj ≤ 150°C
- 135 A
Switching Characteristic, Inductive Load, at Tj=25 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 13
Rise time tr - 14
Turn-off delay time td(off) - 209
Fall time tf - 15
ns
Turn-on energy Eon - 0.32
Turn-off energy Eoff - 0.21
Total switching energy Ets
Tj=25°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG=23Ω
L
σ
2) =60nH,
C
σ
2) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 0.53
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr
tS
tF
-
-
-
111
27
83
ns
Diode reverse recovery charge Qrr - 580 nC
Diode peak reverse recovery current Irrm - 14 A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=25°C,
VR=400V, IF=15A,
diF/dt=980A/µs
- 520
A/µs
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L
σ
and Stray capacity Cσ due to test circuit in Figure E.
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SKB15N60HS
Power Semiconductors 4 Rev 2.3 Oct. 07
Switching Characteristic, Inductive Load, at Tj=150 °C
Value
Parameter Symbol Conditions
min. typ. max.
Unit
IGBT Characteristic
Turn-on delay time td(on) - 11
Rise time tr - 6
Turn-off delay time td(off) - 72
Fall time tf - 26
ns
Turn-on energy Eon - 0.38
Turn-off energy Eoff - 0.20
Total switching energy Ets
Tj=150°C
VCC=400V,IC=15A,
VGE=0/15V,
RG= 3.6Ω
L
σ
1) =60nH,
C
σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 0.58
mJ
Turn-on delay time td(on) - 12
Rise time tr - 15
Turn-off delay time td(off) - 235
Fall time tf - 17
ns
Turn-on energy Eon - 0.48
Turn-off energy Eoff - 0.30
Total switching energy Ets
Tj=150°C
VCC=400V,IC=15A,
VGE=0/15V,
RG= 23Ω
L
σ
1) =60nH,
C
σ
1) =40pF
Energy losses include
“tail” and diode
reverse recovery. - 0.78
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr
tS
tF
-
-
-
184
30
155
ns
Diode reverse recovery charge Qrr - 1320 nC
Diode peak reverse recovery current Irrm - 18 A
Diode peak rate of fall of reverse
recovery current during tb
dirr/dt
Tj=150°C
VR=400V, IF=15A,
diF/dt=1070A/µs
- 360
A/µs
1) Leakage inductance L
σ
and Stray capacity Cσ due to test circuit in Figure E.
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SKB15N60HS
Power Semiconductors 5 Rev 2.3 Oct. 07
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
10A
2
0A
3
0A
4
0A
5
0A
6
0A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,1A
1A
10A
8µs
tP=5µs
15µs
200µs
1ms
50µs
DC
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤150°C;VGE=15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C
0W
20W
40W
60W
80W
100W
120W
140W
IC, COLLECTOR CURRENT
25°C 75°C 125°C
0A
10A
20A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Ic
Ic
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SKB15N60HS
Power Semiconductors 6 Rev 2.3 Oct. 07
IC, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
2
0A
3
0A
4
0A
5V
7V
9V
11V
13V
15V
VGE=20V
IC, COLLECTOR CURRENT
0V 2V 4V 6V
0A
10A
20A
30A
40A
5V
7V
9V
11V
13V
15V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 150°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V
0A
20A
4
0A
150°C
25°C
TJ=-55°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5V
IC=30A
IC=15A
IC=7.5A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=10V)
Figure 8. Typical collecto
r
-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
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SKB15N60HS
Power Semiconductors 7 Rev 2.3 Oct. 07
t, SWITCHING TIMES
0A 10A 20A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
1 ns
10 ns
100 ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
0°C 50°C 100°C 150°C
10ns
100ns
tf
tr
td(on)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=15A, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.5mA)
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SKB15N60HS
Power Semiconductors 8 Rev 2.3 Oct. 07
E, SWITCHING ENERGY LOSSES
0A 10A 20A 30A
0
,0mJ
1,0mJ
2
,0mJ
Ets*
Eoff
*) Eon include losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
0,0 mJ
0,5 mJ
1,0 mJ
Ets*
Eon*
*) Eon include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
0°C 50°C 100°C 150°C
0
.00mJ
0
.25mJ
0
.50mJ
0
.75mJ
Ets*
Eon*
*) Eon include losses
due to diode recovery
Eoff
ZthJC, TRANSIENT THERMAL RESISTANCE
1µs 10µs 100µs 1ms 10ms 100ms 1
s
10-4K/W
10-3K/W
10-2K/W
10-1K/W
100K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
TJ, JUNCTION TEMPERATURE tP, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=20A, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal resistance
(D = tp / T)
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(1/W)
τ
, (s)
0.5321 0.04968
0.2047 2.58*10-3
0.1304 2.54*10-4
0.0027 3.06*10-4
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SKB15N60HS
Power Semiconductors 9 Rev 2.3 Oct. 07
VGE, GATE-EMITTER VOLTAGE
0nC 20nC 40nC 60nC 80nC 100nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=15 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
5µs
10µs
15µs
IC(sc), short circuit COLLECTOR CURRENT
10V 12V 14V 16V 18V
0A
50A
100A
150A
200A
250A
VGE, GATE-EMITETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
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SKB15N60HS
Power Semiconductors 10 Rev 2.3 Oct. 07
trr, REVERSE RECOVERY TIME
200A/µs 400A/µs 600A/µs 800A/µs
100ns
200ns
300ns
400ns
IF=30A
IF=15A
IF=7.5A
Qrr, REVERSE RECOVERY CHARGE
200A/µs 400A/µs 600A/µs 800A/µs
0,0µC
0,5µC
1,0µC
1,5µC
IF=30A
IF=15A
IF=7.5A
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
Figure 22. Typical reverse recovery charge
as a function of diode current
slope
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
Irr, REVERSE RECOVERY CURRENT
200A/µs 400A/µs 600A/µs 800A/µs
0A
5A
10A
15A
IF=30A IF=15A
IF=7.5A
d
i
rr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
200A/µs 400A/µs 600A/µs 800A/µs
-0A/µs
-100A/µs
-200A/µs
-300A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current
slope
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, TJ=150°C,
Dynamic test circuit in Figure E)
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SKB15N60HS
Power Semiconductors 11 Rev 2.3 Oct. 07
IF, FORWARD CURRENT
0,0V 0,5V 1,0V 1,5V
0A
10A
2
0A
150°C
25°C
TJ=-55°C
VF, FORWARD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
1.0V
1.2V
1.4V
1.6V
1.8V
2.0V
IF=30A
IF=15A
IF=7.5A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 25. Typical diode forward current as
a function of forward voltage
Figure 26. Typical diode forward voltage as a
function of junction temperature
ZthJC, TRANSIENT THERMAL RESISTANCE
10µs
100µs
1ms
10ms
100ms
1s
2
K/W
1
K/W
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
tP, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
C1=
τ
1/R1
R1R2
C2=
τ
2/R2
R,(1/W)
τ
, (s)
0.311 7.83*10-2
0.271 1.21*10-2
0.221 1.36*10-3
0.584 1.53*10-4
0.314 2.50*10-5
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SKB15N60HS
Power Semiconductors 12 Rev 2.3 Oct. 07
PG-TO263-3-2
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SKB15N60HS
Power Semiconductors 13 Rev 2.3 Oct. 07
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
rrm
90% I
rrm
10% I
rrm
di /dt
F
t
rr
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
di /dt
rr
Q=Q Q
rr S F
+
t=t t
rr S F
+
Figure C. Definition of diodes
switching characteristics
p(t)
12 n
T(t)
j
τ
1
1
τ
2
2
n
n
τ
T
C
rr
r
r
rr
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
=60nH
an d Stray capacity Cσ =40pF.
Published by
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SKB15N60HS
Power Semiconductors 14 Rev 2.3 Oct. 07
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/6/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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