BL Galaxy Electrical Production specification
NPN General Purpose Transistor MMBTA13/MMBTA14
Document number: BL/SSSTC121 www.galaxycn.com
Rev.A 1
FEATURES
z Epitaxial planar die construction. Pb
Lead-free
z Complementary PNP type available
(MMBTA63/MMBTA64).
z High current gain.
APPLICATIONS
z Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No. Marking Package Code
MMBTA13 K2D SOT-23
MMBTA14 K3D SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value UNIT
VCBO
collector-base voltage MMBTA13
MMBTA14
30
30 V
VCEO
collector-emitter voltage MMBTA13
MMBTA14
30
30 V
VEBO emitter-base voltage 10 V
ICcollector current (DC) 0.3 A
PCCollector dissipation 0.35 W
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
Tj ,Tstg junction and storage temperature -55-150 °C