2SC4517A
NPN Silicon
Power Transistors
Features
• With TO-220F package
• Switching regulator and general purpose
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 550 V
VCBO Collector-Base Voltage 1000 V
VEBO Emitter-Base Voltage 7.0 V
IC Collector Current 3.0 A
PC Collector power dissipation 30 W
TJ Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0) 550 --- Vdc
ICBO Collector-Base Cutoff Current
(VCB=800Vdc,IE=0) --- 100 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=7.0Vdc, IC=0) --- 100 uAdc
ON CHARACTERISTICS
hFE Forward Current Transfer ratio
(IC=1.0Adc, VCE=4.0Vdc) 10 30 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=1.0Adc, IB=0.2Adc) --- 0.5 Vdc
VBE(SAT) Base-Emitter Saturation Voltage
(IC=1.0Adc,IB=0.2Adc) --- 1.2 Vdc
omponents
21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
A
N
M
P
Q
H
J
B
D
C
E
F
K
G
TO-220F
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
B .128 .145 3.25 3.55
C .101 .111 2.57 2.83
D .570 .610 14.9 15.5
E .496 .520 12.6 13.2
F .148 .167 3.75 4.25
G .096 .101 2.44 2.57
H .019 .029 .47 .73
J .046 .056 1.17 1.43
K .266 .285 6.75 7.25
M .165 .190 4.25 4.75
N .110 .130 2.81 3.31
P .097 .107 2.72 2.48
Q .019 .029 .47 .73
A .388 .407 9.85 10.35
