P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt VDS
*R
DS(on)=25Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -200 V
Continuous Drain Current at Tamb
=25°C ID-120 mA
Pulsed Drain Current IDM -1.2 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -200 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS
=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -10
-100 µA
µA
VDS
=-200 V, VGS=0
VDS
=-160 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) -300 mA VDS
=-25 V, VGS
=-10V
Static Drain-Source
On-State Resistance (1)
RDS(on) 25 ΩVGS
=-10V,ID=-150mA
Forward Transconductance
(1)(2)
gfs 50 mS VDS
=-25V,ID=-150mA
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 25 pF VDS
=-25V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 7pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-25V, ID=-150mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
3-425
D
G
S
G
D
S
ZVP2120A
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt VDS
*R
DS(on)=25Ω
REFER TO ZVP2120A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -200 V
Continuous Drain Current at Tamb
=25°C ID-120 mA
Pulsed Drain Current IDM -1.2 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BVDSS -200 V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -10
-100 µA
µA
VDS=-200 V, VGS=0
VDS=-160 V, VGS=0V,
T=125°C(2)
On-State Drain Current(1) ID(on) -300 mA VDS=-25 V, VGS=-10V
Static Drain-Source On-State
Resistance (1)
RDS(on) 25 ΩVGS=-10V,ID=-150mA
Forward Transconductance
(1)(2)
gfs 50 mS VDS=-25V,ID=-150mA
Input Capacitance (2) Ciss 100 pF
Common Source Output
Capacitance (2)
Coss 25 pF VDS=-25V, VGS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss 7pF
Turn-On Delay Time (2)(3) td(on) 7ns
VDD
≈-25V, ID=-150mA
Rise Time (2)(3) tr15 ns
Turn-Off Delay Time (2)(3) td(off) 12 ns
Fall Time (2)(3) tf15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2120C
3-428
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.1A
0-2 -4-6-8-100 -20 -40 -60 -80 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0 -2 -4 -6 -8 -10
-20
VDS-Drain Source Voltage (Volts)
Voltage Saturati on Characte ris tics
VGS-Gate Source Voltage (Volts)
-5V
-4V
-10V
-5V
ID=
-300mA
-200mA
-100mA
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-0.6
-0.4
0
-0.2
2.6
180
VGS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
VGS=
-8V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
-1 -10
100
50
-20
ID=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0-2-4-6-8-10
-10V
-0.6
-0.4
0
-0.2
VDS=
-25V
-50mA
10
T-Temperature (°C)
ZVP2120A
TYPICAL CHARACTERISTICS
T ransconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
0 -0.2 -0.4 -0.6 -0.8
0
Q-Charge (nC)
0
VDS=-25V
Transconductance v gate-so urce voltage
VGS-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
0 0-2-4-6-8-10
VDS=-25V
0-10-20-30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS=
-50V
ID=- 0.4A
-100V -180V
-40 -50 0.2 0.4 0.6 0.8 1.0 1.2
80
60
40
20
100
180
160
140
120
200
80
60
40
20
100
180
160
140
120
200
40
20
60 Ciss
Crss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
ZVP2120A
3-4273-426
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(On)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(th)
ID=-0.1A
0-2 -4-6-8-100 -20 -40 -60 -80 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0 -2 -4 -6 -8 -10
-20
VDS-Drain Source Voltage (Volts)
Voltage Saturati on Characte ris tics
VGS-Gate Source Voltage (Volts)
-5V
-4V
-10V
-5V
ID=
-300mA
-200mA
-100mA
I
D(On)-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-0.6
-0.4
0
-0.2
2.6
180
VGS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
VGS=
-8V
I
D(On)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
-1 -10
100
50
-20
ID=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0-2-4-6-8-10
-10V
-0.6
-0.4
0
-0.2
VDS=
-25V
-50mA
10
T-Temperature (°C)
ZVP2120A
TYPICAL CHARACTERISTICS
T ransconductance v drain current
ID- Drain Current (Amps)
g
fs
-Transconductance (mS)
0 -0.2 -0.4 -0.6 -0.8
0
Q-Charge (nC)
0
VDS=-25V
Transconductance v gate-so urce voltage
VGS-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
0 0-2-4-6-8-10
VDS=-25V
0-10-20-30
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
V
GS
-Gate Source Voltage (Volts)
Gate charge v gate-source voltage
-6
-8
-10
-14
-16
-12
-4
-2
0
VDS=
-50V
ID=- 0.4A
-100V -180V
-40 -50 0.2 0.4 0.6 0.8 1.0 1.2
80
60
40
20
100
180
160
140
120
200
80
60
40
20
100
180
160
140
120
200
40
20
60 Ciss
Crss
80
100
1.4 1.6 1.8 2.0 2.2 2.4
ZVP2120A
3-4273-426
