BAT41 Vishay Semiconductors formerly General Semiconductor Schottky Diode DO-204AH (DO-35 Glass) Features * For general purpose applications * This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges * This diode is also available in a MiniMELF case with type designation LL41 Mechanical Data Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13" reel (52mm tape), 20K/box D8/10K per Ammo tape (52mm tape), 20K/box Maximum Ratings & Thermal Characteristics Parameter Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25C Ratings at 25C ambient temperature unless otherwise specified. Symbol Value Unit VRRM 100 V IF (1) 100 mA Repetitive Peak Forward Current at tp < 1s, @ < 0.5, Tamb = 25C IFRM 350(1) mA Surge Forward Current at tp = 10 ms, Tamb = 25C IFSM 750(1) A Ptot (1) mW (1) C/W Power Dissipation at Tamb = 25C RJA Thermal Resistance Juntion to Ambient Air Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 400 300 Tj 125 C Tamb -65 to +125 C TS -65 to +150 C Electrical Characteristics (T = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit V(BR)R IR = 100A 100 110 -- V Leakage Curren t(2) IR VR = 50V, Tj = 25C VR = 50V, Tj = 100C -- -- -- -- 100 20 nA A Forward Voltage (2) VF IF = 1mA IF = 200mA -- -- 0.40 -- 0.45 1.0 V Capacitance Ctot VR = 1 V, f = 1MHz -- 2 -- pF trr IF = 10 mA, IR = 10mA Irr = 1 mA, RL = 100 -- 5 -- ns J Reverse Breakdown Voltage Reverse Recovery Time (2) Notes: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature (2) Pulse test, tp = 300s Document Number 88136 07-Feb-02 www.vishay.com 1 BAT41 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves Fig. 1 - Admissible Power Dissipation vs. Ambient Temperature mW 500 Fig. 2 - Typical Reverse Characteristics BAT41 mA BAT41 100000 TJ=125C 400 TJ=100C 10000 IR - Leakage Current, (A) Ptot 300 200 TJ=75C 1000 100 TJ=50C 100 TJ=25C 10 0 1 0 100 Tamb (C) 200 1 10 20 30 40 50 55 VR - Reverse Voltage (V) Fig. 3 - Typical Forward Characteristics Fig. 4 - Typical Capacitance vs. Reverse Voltage BAT41 BAT41 1000 5 4.5 4 3.5 TJ = 125C 10 3 Cin (pF) IF - Forward Current (mA) 100 1 TJ = 40C 2.5 2 1.5 0.1 1 0.5 TJ = 25C 0.01 0 0 200 400 600 800 1000 1200 VF - Forward Voltage (mV) www.vishay.com 2 0 5 10 15 20 25 30 35 40 VR (V) Document Number 88136 07-Feb-02