BAT41
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88136 www.vishay.com
07-Feb-02 1
Schottky Diode
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 100 V
Forward Continuous Current at Tamb = 25°CI
F100(1) mA
Repetitive Peak Forward Current
at tp< 1s, @ < 0.5, Tamb = 25°CIFRM 350(1) mA
Surge Forward Current at tp= 10 ms, Tamb = 25°CI
FSM 750(1) A
Power Dissipation at Tamb = 25°CP
tot 400(1) mW
Thermal Resistance Juntion to Ambient Air RθJA 300(1) °C/W
Junction Temperature Tj125 °C
Ambient Operating Temperature Range Tamb –65 to +125 °C
Storage Temperature Range TS–65 to +150 °C
Features
• For general pur pose applications
• This diode features low tur n-on voltage and high
breakdown voltage.This device is protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in a MiniMELF case
with type designation LL41
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13”reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage(2) V(BR)R IR = 100µA 100 110 —V
Leakage Current(2) IRVR = 50V, Tj = 25°C ——100 nA
VR = 50V, Tj = 100°C ——20 µA
F orward Voltage(2) VFIF= 1mA —0.40 0.45 V
IF = 200mA ——1.0
Capacitance Ctot VR= 1 V, f = 1MHz —2—pF
Reverse Recover y Time trr IF= 10 mA, IR = 10mA —5—ns
Irr = 1 mA, RL= 100 Ω
Notes: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
(2) Pulse test, tp= 300µs
Dimensions in inches
and (millimeters)
BAT41
Vishay Semiconductors
for mer ly General Semiconductor
www.vishay.com Document Number 88136
207-Feb-02
Ratings and
Characteristic Curves
BAT41
Fig. 1 – Admissible Po wer
Dissipation vs. Ambient
Temperature
mW
0
100
200
0 100 200
300
400
500
Tamb (°C)
Ptot
BAT41
Fig. 2 – Typical Reverse
Characteristics
mA
110203040 5550
1
10
100
1000
10000
100000
VR - Reverse Voltage (V)
IR - Leakage Current, (µA)
TJ=125°C
TJ=100°C
TJ=75°C
TJ=50°C
TJ=25°C
BAT41
Fig. 3 – Typical Forward
Characteristics
0.01
0.1
0 200 400 600 800 1000 1200
1
10
100
1000
VF - Forward Voltage (mV)
IF - Forward Current (mA)
TJ = 25°C
TJ = 125°C
TJ = 40°C
BAT41
Fig. 4 – T ypical Capacitance vs.
Reverse Voltage
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 5 10 15 20 25 30 35 40
VR (V)
Cin (pF)
