MBR735 - MBR760 — Schottky Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 1
June 2013
MBR735 - MBR760
Schottky Rectifiers
Features
Low Power Loss, High Efficiency
High Surge Capacity
Metal Silicon Junction, Majority Carrier Conduction
High Current Capacity, Low Forward-Voltage Drop
Guard Ring for Over-V oltage Protection (OVP)
Applications
Low-Voltage, High-Frequency Inverters
Free Wheeling and Polarity Pro tection
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresse s ab ove the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter Value Units
735 745 750 760
VRRM Maximum Repetitive Reverse V oltage 35 45 50 60 V
IF(AV) Average Rectified Forward Current 7.5 A
IFSM Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave 150 A
Tstg Storage Temperature Range -65 to +175 °C
TJOperating Junction Temperature -65 to +150 °C
Symbol Parameter Value Units
PDPower Dissipation 2.0 W
RθJA Thermal Resistance, Junction to Ambient 60 °C/W
RθJL Thermal Resistance, Junction to Lead 3.0 °C/W
TO-220AC
12
PIIN2
PIIN1
Case
MBR735 - MBR760 — Schottky Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units
735 745 750 760
VFForward Voltage
IF = 7.5 A, TC = 25°C0.75
V
IF = 7.5 A, TC = 125°C0.57 0.65
IF = 15 A, TC = 25°C0.84
IF = 15 A, TC = 125°C0.72
IRReverse Current at rated VR TC = 25°C0.10.5
mA
TC = 125°C1550
IRRM Peak Repetitive Reverse Surge Current
2.0 μs Pulse Width, f = 1.0 kHz 1.0 0.5 A
MBR735 - MBR760 — Schottky Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Forwar d Current Derating Curve Figure 2. Non-Repetitive Surge Current
Figure 3. Forward Voltag e Chara ct e ristics Figure 4. Reverse Current vs. Reverse Voltage
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
MBR735 - MBR760 — Schottky Rectifiers
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR735 - MBR760 Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 2-LEAD (ACTIVE)
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For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO220A02.pdf.
TO-220 2L
F) TO220A02REVB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I64
®
Mouser Electronics
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