MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 30 A
VRRM 35 V to 60 V
IFSM 200 A
VF0.60 V, 0.65 V
TJ max. 150 °C
PIN 1
PIN 3 CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V
Maximum working peak reverse voltage VRWM 35 45 50 60 V
Maximum DC blocking voltage VDC 35 45 50 60 V
Maximum average forward rectified current (Fig. 1) IF(AV) 30 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode IFSM 200 A
Peak repetitive reverse surge current per diode (1) IRRM 2.0 1.0 A
Voltage rate of change at (rated VR) dV/dt 10 000 V/µs
Operating junction temperature range TJ - 65 to + 150 °C
Storage temperature range TSTG - 65 to + 175 °C
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
2
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum instantaneous
forward voltage per diode (1)
IF = 20 A
IF = 20 A
IF = 30 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
VF
-
0.60
0.76
0.72
0.75
0.65
-
-
V
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
TC = 25 °C
TC = 125 °C IR 1.0
60
5.0
100 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Thermal resistance from junction to case per diode RθJC 1.4 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube
Figure 1. Forward Current Derating Curve
0
6
12
24
30
050 100 150
18
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Resistive or Inductive Load
Average Forward Current (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
50
150
100
250
200
300
1100
10
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.80.9
TJ = 150 °C
TJ = 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
1
10
100
0.01
0.001
0.1
200 10040 60 80
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
J
= 125 °C
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
101 100
1000
10 000
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
0.01 101 100
10
100
0.1
0.1
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
PIN 1
PIN 3 CASE
PIN 2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9) 0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
(4.3)
0.086(2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048(1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1 2 3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30° 10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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