2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition Feb. 1999 Features * Low on-resistance R DS(on) =4.5m typ. * Low drive current * 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3070(L),2SK3070(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 40 V Gate to source voltage VGSS 20 V Drain current ID 75 A 300 A 75 A 50 A 333 mJ 100 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalanche current Avalanche energy I AP Note 1 Note 3 EAR Note 3 Note 2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SK3070(L),2SK3070(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 40 -- -- V I D = 10mA, VGS = 0 Gate to source leak current I GSS -- -- 0.1 A VGS = 20V, VDS = 0 Zero gate voltege drain current I DSS -- -- 10 A VDS = 40 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 -- 2.5 V I D = 1mA, VDS = 10V Note1 Static drain to source on state RDS(on) -- 4.5 5.8 m I D = 40A, VGS = 10V Note1 resistance -- 6.5 10 m I D = 40A, VGS = 4V Note1 Forward transfer admittance |yfs| 50 80 -- S I D = 40A, VDS = 10V Note1 Input capacitance Ciss -- 6800 -- pF VDS = 10V Output capacitance Coss -- 1300 -- pF VGS = 0 Reverse transfer capacitance Crss -- 380 -- pF f = 1MHz Total gate charge Qg -- 130 -- nc VDD = 25V Gate to source charge Qgs -- 25 -- nc VGS = 10V Gate to drain charge Qgd -- 30 -- nc I D = 75A Turn-on delay time t d(on) -- 60 -- ns VGS = 10V, ID = 40A Rise time tr -- 300 -- ns RL = 0.75 Turn-off delay time t d(off) -- 550 -- ns Fall time tf -- 400 -- ns Body-drain diode forward voltage VDF -- 1.05 -- V I F = 75A, VGS = 0 Body-drain diode reverse recovery time t rr -- 90 -- ns I F = 75A, VGS = 0 diF/ dt =50A/s Note: 1. Pulse test 3 2SK3070(L),2SK3070(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 I D (A) 150 Drain Current Channel Dissipation Pch (W) 200 100 50 100 30 10 3 1 50 100 Case Temperature 150 200 Tc (C) = 10 DC ms Op (1 s e (T rati hot) c = on 25 Operation in C ) this area is limited by R DS(on) Typical Transfer Characteristics 100 4V 80 5V ID VGS = 10 V Drain Current 60 Pulse Test (A) 3.5 V I D (A) PW 0.1 Ta = 25C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) Typical Output Characteristics 100 Drain Current 10 0.3 0 3V 40 20 80 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 V DS = 10 V Pulse Test 60 40 20 2.5 V 4 10 0 s s 1 m s 300 0 75C 25C Tc = -25C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK3070(L),2SK3070(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.4 0.3 I D = 50 A 0.2 20 A 0.1 10 A Static Drain to Source on State Resistance R DS(on) (m ) 0 12 4 8 Gate to Source Voltage 16 8 4 0 -50 I D = 50 A VGS = 10 V 10, 20 A 10, 20, 50 A 4V 0 50 100 Case Temperature 100 Pulse Test 50 20 10 150 Tc (C) 200 VGS = 4 V 5 10 V 2 1 1 16 20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 12 Drain to Source On State Resistance R DS(on) (m ) Pulse Test 3 10 30 100 300 1000 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) 0.5 Static Drain to Source on State Resistance vs. Drain Current 500 200 V DS = 10 V Pulse Test 100 50 Tc = -25 C 20 10 25 C 5 75 C 2 1 0.5 0.1 0.3 1 3 10 30 100 Drain Current I D (A) 5 2SK3070(L),2SK3070(S) Body-Drain Diode Reverse Recovery Time 30000 VGS = 0 f = 1 MHz 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 200 100 50 10000 V DS V DD = 40 V 25 V 10 V 40 20 0 12 8 V DD = 40 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS (V) 16 Crss 10 20 30 40 50 Switching Characteristics t d(off) 500 Switching Time t (ns) 60 1000 Gate to Source Voltage V DS (V) Drain to Source Voltage V GS 80 Coss 1000 Drain to Source Voltage V DS (V) 20 I D = 75 A 3000 100 0 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Dynamic Input Characteristics 100 Ciss 300 di / dt = 50 A / s V GS = 0, Ta = 25 C 20 10 0.1 6 Typical Capacitance vs. Drain to Source Voltage tf 200 tr 100 t d(on) 50 20 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 10 0.1 0.2 0.5 1 2 Drain Current 5 10 20 I D (A) 50 100 2SK3070(L),2SK3070(S) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy E AR (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current I DR (A) 100 10 V 80 5V 60 V GS = 0, -5 V 40 20 p 0 0.4 0.8 1.2 Source to Drain Voltage X " L 1.6 2.0 500 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 400 300 200 100 0 25 V SD (V) 50 Avalanche Test Circuit V DS Monitor 75 100 125 150 Channel Temperature Tch (C) Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin 15 V 50 0 VDD 7 2SK3070(L),2SK3070(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C 0.1 0.05 PDM 0.02 1 lse 0.0 t pu o h 1s 0.03 0.01 10 D= PW T PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% 90% td(on) 8 tr 10% 90% td(off) tf 2SK3070(L),2SK3070(S) Package Dimensions As of January, 2001 Unit: mm 2.54 0.5 (1.4) 2.54 0.5 11.3 0.5 10.0 1.27 0.2 0.2 0.86 +- 0.1 0.76 0.1 11.0 0.5 1.2 0.2 4.44 0.2 1.3 0.15 + 0.3 - 0.5 8.6 0.3 10.2 0.3 2.59 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (L) -- -- 1.4 g 9 2SK3070(L),2SK3070(S) As of January, 2001 Unit: mm 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 3.0 +- 0.5 1.27 0.2 1.2 0.2 7.8 7.0 (1.5) 0.2 0.1 +- 0.1 2.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 10 1.7 7.8 6.6 1.3 0.15 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 LDPAK (S)-(1) -- -- 1.3 g 2SK3070(L),2SK3070(S) As of January, 2001 Unit: mm (1.5) 7.8 7.0 1.7 7.8 6.6 1.3 0.2 0.3 10.0 +- 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 0.2 0.1 +- 0.1 2.2 1.2 0.2 2.54 0.5 0.2 0.86 +- 0.1 2.54 0.5 0.3 5.0 +- 0.5 1.27 0.2 0.4 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) LDPAK (S)-(2) -- -- 1.35 g 11 2SK3070(L),2SK3070(S) Cautions 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12