DPG10IM300UC HiPerFRED VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 (DPak) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10IM300UC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 300 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 300 V TVJ = 25C 1 A VR = 300 V TVJ = 150C 0.06 mA TVJ = 25C 1.27 V 1.45 V 0.98 V IF = forward voltage drop min. 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 C TC = 150C rectangular 1.17 V T VJ = 175 C 10 A TVJ = 175 C 0.74 V d = 0.5 for power loss calculation only 17.7 m 2.3 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 15 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.50 TC = 25C 10 A; VR = 200 V -di F /dt = 200 A/s 65 140 W A TVJ = 125C 5.5 A TVJ = 25 C 35 ns TVJ = 125C 45 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10IM300UC Package Ratings TO-252 (DPak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 max. 20 Unit A -55 175 C -55 150 C 150 C Weight FC 1) typ. 1) 0.3 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking Logo Part number Assembly Line Part number D P G 10 IM 300 UC IXYS abcdefg Z YY = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-252AA (DPak) WW Date Code Ordering Standard Part Number DPG10IM300UC Similar Part DPG10I300PA Equivalent Circuits for Simulation I V0 R0 Marking on Product PAOGUI Package TO-220AC (2) * on die level Delivery Mode Tape & Reel Code No. 505682 Voltage class 300 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.74 V R 0 max slope resistance * 14.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 2500 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10IM300UC Outlines TO-252 (DPak) 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10IM300UC Fast Diode 30 0.3 20 A VR = 200 V 25 TVJ = 125C 10 0.2 20 A VR = 200 V 10 A TVJ = 25C 125C 150C 20 IF 12 TVJ = 125C 10 A 8 Qrr 5A 5A IRR 15 6 [C] [A] 10 [A] 0.1 4 5 2 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 100 VF [V] 200 300 400 500 0 100 -diF /dt [A/s] Fig. 1 Forward current IF versus VF 300 400 500 Fig. 3 Typ. reverse recov. current IRR versus -diF /dt Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 80 1.4 200 -diF /dt [A/s] 12 600 10 500 TVJ = 125C VR = 200 V 1.2 1.0 60 0.8 8 trr Kf 0.6 IF = 20 A [ns] IRR 400 TVJ = 125C VFR tfr IF = 10 A VR = 200 V 6 [V] 300 [ns] 4 40 200 0.4 10 A Qrr 0.2 2 5A 0.0 20 0 40 80 120 160 TVJ [C] 100 200 300 400 500 0 -diF /dt [A/s] 100 200 300 400 100 0 500 -diF /dt [A/s] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 10 tfr 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ VFR Fig. 6 Typ. forward recov. voltage VFR and tfr versus diF /dt 3 TVJ = 125C VR = 200 V 8 Erec [J] 2 IF = 5 A 6 ZthJH 10 A 20 A [K/W] 4 1 2 0 0 100 200 300 400 500 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0 0.001 0.01 0.1 Rthi [K/W] ti [s] 0.3866 0.7062 0.8127 0.3945 0.0004 0.0025 0.022 0.13 1 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a