2MBI200HJ-120-50 - Fuji Electric

2MBI200HJ-120-50 IGBT Modules

Power Module (V series)

1200V / 200A / 2-in-1 package

■Features

High speed switching

Voltage drive

Low Inductance module structure

■Applications

Soft-switching Application

Industrial machines,such as Welding machines

■

Equivalent Circuit

■

Outline drawing ( Unit : mm )

FM5F8377

2014/08

C2E1

Weight: 370g (typ.)

2MBI200HJ-120-50 IGBT Modules

■ Absolute Maximum Ratings (at TC= 25°C unless otherwise specified)

(*1) All terminals should be connected together during the test.

(*2) Recommendable Value : 3.0-6.0 Nm (M5 or M6)

(*3) Recommendable Value : 2.5-5.0 Nm (M6)

5.0

FM5F8377

2014/08

VAC

Screw

Torque

Mounting (*2)

6.0

N m

Terminals (*3)

Storage temperature

Tstg

-40 ~ 125

Isolation

voltage

between terminal and copper base

(*1)

Viso

AC: 1min.

2500

Junction temperature

150

°C

Case temperature

125

400

1ms

800

Collector power dissipation

1 device

1385

-IC pulse

Collector current

Continuous

Tc=80°C

200

Tc=25°C

275

1ms

Units

Collector-Emitter voltage

VCES

1200

-IC

IC pulse

Items

Symbols

Conditions

Maximum

Ratings

Gate-Emitter voltage

VGES

±20

2MBI200HJ-120-50 IGBT Modules

■ Electrical characteristics (at Tｊ= 25°C unless otherwise specified)

600V 200A

±15V 4.7Ω

125oC30nH

5. Thermal resistance characteristics

(*1) This is the value which is defined mounting on the additional cooling fin with thermal compound.

FM5F8377

2014/08

°C/W

FWD

0.140

Contact thermal resistance

(1device) (*1)

Rth(c-f)

with thermal compound

0.0125

Thermal resistance

(1device)

Rth(j-c)

IGBT

0.090

nsec

Items

Symbols

Conditions

Characteristics

Units

min.

typ.

max.

Reverse recovery

time

trr

IF=200A

130

(chip)

VGE=0V, IF=300A

Tj=25oC

1.70

1.95

Tj=125oC

1.85

2.15

2.40

Tj=125oC

2.30

Forward on voltage

(terminal)

VGE=0V, IF=300A

Tj=25oC

Turn-off time

toff

Tj=

Ls=

300

180

tr(i)

VGE=

RG=

Turn-on time

ton

250

nsec

Vcc=

IC=

Input capacitance

Cies

VCE=10V, VGE=0V, ƒ=1MHz

15.2

4.10

Internal gate resistance

RG(int)

0.8

4.50

VCE(sat)

(chip)

VGE=15V, Ic=200A

Tj=25oC

3.20

3.50

Tj=125oC

Collector-Emitter

saturation voltage

VCE(sat)

(terminal)

VGE=15V, Ic=200A

Tj=25oC

3.60

3.90

Tj=125oC

800

Zero gate voltage

Collector current

ICES

Gate-Emitter

threshold voltage

VGE(th)

VCE=20V, Ic=200mA

5.7

6.2

6.7

Items

Symbols

Conditions

Characteristics

Gate-Emitter

leakage current

IGES

VCE=0V, VGE=±20V

Units

min.

typ.

max.

VGE=0V, VCE=1200V

4.0

2MBI200HJ-120-50 IGBT Modules

FM5F8377

2014/08

VGE = 15V / chip

Tj = 25oC / chip

Capacitance vs. Collector-Emitter Voltage

Dynamic Gate Charge (typ.)

VGE= 0V, ƒ= 1MHz, Tj= 25oC

Vcc=600V, Ic=200A, Tj= 25°C

Collector current vs. Collector-Emitter voltage

Collector current vs. Collector-Emitter voltage (typ.)

Tj = 25oC / chip

Tj = 125oC / chip

Collector current vs. Collector-Emitter voltage

Collector-Emitter voltage vs. Gate-Emitter voltage

100

150

200

250

300

350

400

450

0 1 2 3 4 5 6 7 8

Collector current: IC[A]

Collector-Emitter voltage: VCE [V]

VGE=20V

15V 12V

10V

100

150

200

250

300

350

400

450

012345678

Collector current: IC[A]

Collector-Emitter voltage: VCE [V]

VGE= 20V

15V

12V

10V

100

150

200

250

300

350

400

450

0123456

Collector Current: IC[A]

Collector-Emitter Voltage: VCE [V]

125oC

Tj=25oC

510 15 20 25

Collector-Emitter Voltage: VCE [V]

Gate-Emitter Voltage: VGE [V]

IC=400A

IC=200A

IC=100A

0.1

100

0 5 10 15 20 25 30

Capacitance: Cies, Coes, Cres [nF] ***

Collector-Emitter voltage: VCE [V]

Cies

Coes

Cres

100

200

300

400

500

600

700

800

0 200 400 600

Collector-Emitter voltage: VCE [V]

Gate-Emitter voltage: VGE [V]

Gate charge: Qg [nC]

VGE

VCE

2MBI200HJ-120-50 IGBT Modules

FM5F8377

2014/08

Vcc=600V, Ic=200A, VGE=±15V, Tj=125°C

Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=25, 125°C

Switching loss vs. Gate resistance (typ.)

Reverse bias safe operating area (max.)

Vcc=600V, Ic=200A, VGE=±15V, Tj=25, 125°C

+VGE=15V, -VGE=15V, Rg=4.7Ω, Tj=125°C

Switching time vs. Collector current (typ.)

Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=25°C

Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C

Switching time vs. Gate resistance (typ.)

Switching loss vs. Collector current (typ.)

100

1000

0 100 200 300 400

Switching time: ton, tr, toff, tf[nsec]

Collector current: IC[A]

toff

ton

100

1000

0 100 200 300 400

Switching time: ton, tr, toff, tf[nsec]

Collector current: IC[A]

toff

ton

100

1000

10000

110 100

Switching time: ton, tr, toff, tf [nsec]

Gate resistance: RG[Ω]

toff

ton

0 100 200 300 400 500

Switching loss: Eon, Eoff, Err [mJ/pulse]

Collector current: IC[A]

Eon

=25oC

Tj=125oC

Err

Eoff

110 100

Switching loss: Eon, Eoff, Err [mJ/pulse]

Gate resistance: RG[Ω]

Eoff

Err

Eon

Tj=25oC

Tj=125oC

100

150

200

250

300

350

400

450

0 400 800 1200 1600

Collector current: IC[A]

Collector-Emitter voltage: VCE [V]

(Main terminals)

2MBI200HJ-120-50 IGBT Modules

FM5F8377

2014/08

Forward current vs. Forward vltage (typ.)

chip

Reverse recovery characteristics (typ.)

Vcc=600V, VGE=±15V, Rg=4.7Ω, Tj=125°C

Transient thermal resistance (max.)

FWD safe operating area (max.)

Tj = 125oC

100

200

300

400

500

600

700

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward current: IF[A]

Forward on voltage: VF[V]

125oC

Tj=25oC

100

1000

0 100 200 300 400

Reverse recovery current: Irr [A]

Reverse recovery time: trr [nsec]

Forward current: IF[A]

trr

Irr

0.001

0.01

0.1

0.001 0.01 0.1 1

Thermal resistance: Rth(j-c) [oC/W] ***

Pulse Width : PW[sec]

FWD

IGBT

















 4

erZth



1 2 3 4

n[sec] 0.0023 0.0301 0.0598 0.0708

rnIGBT 0.00965 0.02448 0.03458 0.02130

[°C/W] FWD 0.01502 0.03807 0.05379 0.03313

100

150

200

250

300

350

400

450

0 400 800 1200 1600

Reverse recovery current: Irr [A]

Collector-Emitter voltage: VCE [V]

(Main terminals)

Pmax=280kW

2MBI200HJ-120-50 IGBT Modules

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of .

The contents are subject to change without notice for specification changes or other reasons. When using a product listed

in this Catalog, be sure to obtain the latest specifications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license,

either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric

Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or

implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the

use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products

may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate

safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become

faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.

The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has

normal reliability requirements.

･Computers ･OA equipment ･Communications equipment (terminal devices) ･Measurement equipment

･Machine tools ･Audiovisual equipment ･Electrical home appliances ･Personal equipment ･Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment

listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such

equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's

product incorporated in the equipment becomes faulty.

･Transportation equipment (mounted on cars and ships) ･Trunk communications equipment

･Traffic-signal control equipment ･Gas leakage detectors with an auto-shut-off feature

･Emergency equipment for responding to disasters and anti-burglary devices ･Safety devices ･Medical equipment

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to

strategic equipment (without limitation).

･Space equipment ･Aeronautic equipment ･Nuclear control equipment ･Submarine repeater equipment

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the

product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in

accordance with instructions set forth herein.

8/2014

FM5F8377

2014/08

Warnings

Global

中国

Europe

North America

日本

Technical Information IGBT Modules

2015-10



Please refer to URLs below for futher information about products, application manuals and technical documents.



关于本规格书中没有记载的产品信息，应用手册，技术资料等，请参考以下链接。

本データシートに記載されていない製品情報 , アプリケーションマニュアル , 技術資料は以下の URL をご参照下さい。

FUJI ELECTRIC Power Semiconductor WEB site

Information

www.fujielectric.com/products/semiconductor/

www.fujielectric.com.cn/products/semiconductor/

www.fujielectric-europe.com/components/semiconductors/

www.americas.fujielectric.com/components/semiconductors/

www.fujielectric.co.jp/products/semiconductor/

日本

半導体総合カタログ

www.fujielectric.co.jp/products/semiconductor/catalog/

製品情報

www.fujielectric.co.jp/products/semiconductor/model/

アプリケーションマニュアル

www.fujielectric.co.jp/products/semiconductor/model/igbt/application/

技術資料

www.fujielectric.co.jp/products/semiconductor/model/igbt/technical/

マウンティングインストラクション

www.fujielectric.co.jp/products/semiconductor/model/igbt/mounting/

IGBT 損失シミュレーションソフト

www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation/

7AT-NPC 3-Level 損失シュミレーションソフト

www.fujielectric.co.jp/products/semiconductor/model/igbt/simulation_3level/

富士電機技報

www.fujielectric.co.jp/products/semiconductor/journal/

製品のお問い合わせ

www.fujielectric.co.jp/products/semiconductor/contact/

改廃のお知らせ

www.fujielectric.co.jp/products/semiconductor/discontinued/

中国

半导体综合目录

www.fujielectric.com.cn/products/semiconductor/catalog/

产品信息

www.fujielectric.com.cn/products/semiconductor/model/

应用手册

www.fujielectric.com.cn/products/semiconductor/model/igbt/application/

技术资料

www.fujielectric.com.cn/products/semiconductor/model/igbt/technical/

安装说明书

www.fujielectric.com.cn/products/semiconductor/model/igbt/mounting/

IGBT 损耗模拟软件

www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation/

AT-NPC 3-Level 损耗模拟软件

www.fujielectric.com.cn/products/semiconductor/model/igbt/simulation_3level/

富士电机技报

www.fujielectric.com.cn/products/semiconductor/journal/

产品咨询

www.fujielectric.com.cn/products/semiconductor/contact/

产品更改和停产信息

www.fujielectric.com.cn/products/semiconductor/discontinued/

Global

Semiconductors General Catalog

www.fujielectric.com/products/semiconductor/catalog/

Product Information

www.fujielectric.com/products/semiconductor/model/

Application Manuals

www.fujielectric.com/products/semiconductor/model/igbt/application/

Technical Documents

www.fujielectric.com/products/semiconductor/model/igbt/technical/

Mounting Instructions

www.fujielectric.com/products/semiconductor/model/igbt/mounting/

IGBT Loss Simulation Software

www.fujielectric.com/products/semiconductor/model/igbt/simulation/

AT-NPC 3-Level Loss Simulation Software www.fujielectric.com/products/semiconductor/model/igbt/simulation_3level/

Fuji Electric Journal

www.fujielectric.com/products/semiconductor/journal/

Contact

www.fujielectric.com/products/semiconductor/contact/

Revised and discontinued product information www.fujielectric.com/products/semiconductor/discontinued/