VT82C694X
Revision 1.0 September 8, 1999 -3- Features
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•Advanced High-Performance DRAM Controller
−DRAM interface synchronous with host CPU (66/100/133 MHz) or AGP (66MHz) for most flexible configuration
−DRAM interface may be faster than CPU by 33 MHz to allow use of PC100 memory modules with 66MHz Celeron
or use of PC133 with 100MHz Pentium II or Pentium III
−DRAM interface may be slower than CPU by 33 MHz to allow use of older memory modules with newer CPUs (e.g.,
PC66 memory modules with 100 MHz Pentium II or Pentium III)
−Concurrent CPU, AGP, and PCI access
−Supports FP, EDO, SDRAM, ESDRAM, and VCM SDRAM memory types
−Different DRAM typ e s may be used in mixed combinations
−Different DRAM timing for each bank
−Dynamic Clock Enable (CKE) control for SDRAM power reduction in high speed systems
−Mixed 1M / 2M / 4M / 8M / 16M / 32MxN DRAMs
−Pinouts support 8 banks up to 2 GB DRAMs (256Mb DRAM technology) at 100 MHz
(PC133 specifications, however, recommend a limit of 3 DIMMs or 6 banks at 133 MHz for 1.5 GB max memory)
−Flexible row and column addresses
−64-bit data width only
−3.3V DRAM interface with 5V-tolerant inputs
−Programmable I/O drive capability for MA, command, and MD signals
−Dual copies of MA signals for improved drive
−Optional bank-by-bank ECC (single-bit error correctio n and multi-bit error detection)
or EC (error checking only) for DRAM integrity
−Two-bank interleaving for 16Mbit SDRAM support
−Two-bank and four bank interleaving for 64Mbit SDRAM support
−Supports maximum 8-bank interleave (i.e., 8 pages open simultaneously); banks are allocated based on LRU
−Independent SDRAM control for each bank
−Seamless DRAM command scheduling for maximum DRAM bus utilization
(e.g., precharge other banks while accessing the current bank)
−Four cache lines (16 quadwords) of CPU to DRAM write buffers
−Four cache lines of CPU to DRAM read prefetch buffers
−Read around write capability for non-stalled CPU read
−Speculative DRAM read before snoop result
−Burst read and write operation
−x-2-2-2-2-2-2-2 back-to-back accesses for EDO DRAM from CPU or from DRAM controller
−x-1-1-1-1-1-1-1 back-to-back accesses for SDRAM
−BIOS shadow at 16KB increment
−Decoupled and burst DRAM refresh with staggered RAS timing
−CAS befor e RAS or self r efresh
•Advanced System Power Management Support
−Dynamic power down of SDRAM (CKE)
−Independent clock stop controls for CPU / SDRAM, AGP, and PCI bus
−PCI and AGP bus c l ock run and clock generator control
−VTT suspend power plane preserves memory data
−Suspend-to-DRAM and Self-Refresh operation
−EDO self-refresh and SDRAM self-refresh power down
−8 bytes of BIOS scratch registers
−Low-leakage I/O pads
•Built-in NAND-tree pin scan test capability
•3.3V, 0.35um, high speed / low power CMOS process
•35 x 35 mm, 510 pin BGA Package