PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0
July 2014
PN2222A
NPN General-Purpose Amplifier
Features
This device is for use as a medium power amplifier and
switch requiring collector currents up to 500mA.
Ordering Information
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and stres sing the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These rating are based on a maximum junction temperature of 150 °C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operation.
Part Number Top Mark Package Packing Method
PN2222ABU PN2222A TO-92 3L Bulk
PN2222ATA PN2222A TO-92 3L Ammo
PN2222ATF PN2222A TO-92 3L Tape and Reel
PN2222ATFR PN2222A TO-92 3L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current 1.0 A
TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
EBC TO-92
PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwis e not ed .
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Max. Unit
PDTotal Device Dissipation 625 mW
Derate Above 25°C5.0mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown
Voltage(4) IC = 10 mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 10 nA
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 0.01 μA
VCB = 60 V, IE = 0, TA = 125°C10
IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
IBL Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA
On Characteristics
hFE DC Current Gain
IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 10 mA, VCE = 10 V,
TA = -55°C35
IC = 150 mA, VCE = 10 V(4) 100 300
IC = 150 mA, VCE = 1 V(4) 50
IC = 500 mA, VCE = 10 V(4) 40
VCE(sat) Collector-Emitter Saturation Voltage(4) IC = 150 mA, IB = 15 mA 0.3 V
IC = 500 mA, IB = 50 mA 1.0
VBE(sat) Base-Emi tter Satu rati on Voltage(4) IC = 150 mA, IB = 15 mA 0.6 1.2 V
IC = 500 mA, IB = 50 mA 2.0
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF
Cibo Input Capaci tance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF
rb’CcCollector Base Time Constant IC = 20 mA, VCB = 20 V,
f = 31.8 MHz 150 pS
NF Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB
Re(hie)Real Part of Common-Emitter
High Frequency Input Impedance IC = 20 mA, VCE = 20 V,
f = 300 MHz 60 Ω
Switching Characteristics
tdDelay Time VCC = 30 V, VEB(off) = 0.5 V,
IC = 150 mA, IB1 = 15 mA 10 ns
trRise Time 25 ns
tsStorage Time VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA 225 ns
tfFall Time 60 ns
PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0 4
Physical Dimensions
Figure 1. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing a nd contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel spec ifications, visit Fairchild Semiconductor’s online packaging a rea:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
D
TO-92 (Bulk)
PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0 5
Physical Dimensions (Continued)
Figure 2. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing a nd contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.
TO-92 (Ammo, Tape and Reel)
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I68
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