PN2222A — NPN General-Purpose Amplifier
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A Rev. 1.1.0 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
BV(BR)CEO Collector-Emitter Breakdown
Voltage(4) IC = 10 mA, IB = 0 40 V
BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V
BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 10 nA
ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 0.01 μA
VCB = 60 V, IE = 0, TA = 125°C10
IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA
IBL Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA
On Characteristics
hFE DC Current Gain
IC = 0.1 mA, VCE = 10 V 35
IC = 1.0 mA, VCE = 10 V 50
IC = 10 mA, VCE = 10 V 75
IC = 10 mA, VCE = 10 V,
TA = -55°C35
IC = 150 mA, VCE = 10 V(4) 100 300
IC = 150 mA, VCE = 1 V(4) 50
IC = 500 mA, VCE = 10 V(4) 40
VCE(sat) Collector-Emitter Saturation Voltage(4) IC = 150 mA, IB = 15 mA 0.3 V
IC = 500 mA, IB = 50 mA 1.0
VBE(sat) Base-Emi tter Satu rati on Voltage(4) IC = 150 mA, IB = 15 mA 0.6 1.2 V
IC = 500 mA, IB = 50 mA 2.0
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 20 mA, VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF
Cibo Input Capaci tance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF
rb’CcCollector Base Time Constant IC = 20 mA, VCB = 20 V,
f = 31.8 MHz 150 pS
NF Noise Figure IC = 100 μA, VCE = 10 V,
RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB
Re(hie)Real Part of Common-Emitter
High Frequency Input Impedance IC = 20 mA, VCE = 20 V,
f = 300 MHz 60 Ω
Switching Characteristics
tdDelay Time VCC = 30 V, VEB(off) = 0.5 V,
IC = 150 mA, IB1 = 15 mA 10 ns
trRise Time 25 ns
tsStorage Time VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA 225 ns
tfFall Time 60 ns