© Semiconductor Components Industries, LLC, 2010
April, 2019 − Rev. 2
1Publication Order Number:
GBU8B/D
GBU8A - GBU8M
Bridge Rectifiers
Features
•Glass−Passivated Junction
•Surge Overload Rating: 200 A Peak
•Reliable Low−Cost Construction Utilizing Molded Plastic Technique
•Ideal for Printed Circuit Board
•UL Certified: UL #E258596
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Marking Package
Packing
Method
GBU8A GBU8A GBU 4L Rail
GBU8B GBU8B
GBU8D GBU8D
GBU8G GBU8G
GBU8J GBU8J
GBU8K GBU8K
GBU8M GBU8M
SIP4
CASE 127EL
www.onsemi.com
MARKING DIAGRAM
RU = UL Marking
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
GBU8A = Specific Device Code
~~ +−
RU$Y&Z&3
GBU 8A
GBU8A − GBU8M
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol Parameter
Value
Units
8A 8B 8D 8G 8J 8K 8M
VRRM Maximum Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input Voltage 35 70 140 280 420 560 700 V
VRDC Reverse Voltage (Rated VR) 50 100 200 400 600 800 1000 V
IF(AV) Average Rectified Forward
Current
TA = 100°C 8.0 A
TA = 45°C 6.0 A
IFSM Non−Repetitive Peak Forward Surge Current
8.3 ms Single Half−Sine−Wave
200 A
TSTG Storage Temperature Range −55 to +150 °C
TJOperating Junction Temperature −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARECTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter Value Units
PDPower Dissipation 16 W
RqJA Thermal Resistance per Leg, Junction to Ambient (Note 1) 18 °C/W
RqJL Thermal Resistance per Leg, Junction to Case (Note 2) 3°C/W
1. Device mounted on PCB with 0.5 × 0.5 inch (12 × 12 mm)
2. Heat sink mounting, 4 × 4 × 0.15 inch copper plate
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Parameter Value Units
VFForward Voltage, per Element 8.0 A 1.0 V
IRReverse Current, per Element at Rated VRTA = 25°C 5.0 mA
TA = 100°C 500 mA
I2t I2t Rating for Fusing t < 8.35 ms 166 A2s
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
GBU8A − GBU8M
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3
TYPICAL PERFORMANCE CHARACTERISTICS
100
Ambient Temperature (5C)
IF
, Average Rectified Forward
Current (A)
0
150
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Non−Repetitive Surge Current
Figure 5. Total Capacitance
050
2
4
6
VF
, Forward Voltage (V)
IF
, Forward Current (A)
IR, Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%) Number of Cycles at 60 Hz
IFSM, Peak Forward Surge
Current (A)
VR, Reverse Voltage (V)
CT
, Total Capacitance (pF)
1
100
0.1
10
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.1
10
0.01
1
0 20 40 60 80 100 120 140
250
110
200
150
100
50
0
100
50
400
10
100
1105 50 100
HEAT−SINK
MOUNTING, TC
4”x4”x0.15”
COPPER PLATE
MOUNTED ON PC BOARD,
TA 0.5” (12.7 mm) LEAD LENGTH
60 Hz RESISTIVE OR INDUCTIVE LOAD
8
TA = 25°C
Pulse Width = 300 ms
1% Duty Cycle
TC = 100°C
TC = 25°C
TJ = 150°C
8.3 ms Single Half Sine−Wave
TA = 25°C
f = 1.0 MHz
Visg = 50m Vp−p
SIP4 22.05x18.55
CASE 127EL
ISSUE O
DATE 31 DEC 2016
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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DOCUMENT NUMBER:
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SIP4 22.05x18.55
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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1
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