EB13C3D1H-12.582912M TR - Ecliptek Corporation

RoHS

EB13C3D1H-12.582912M TR

EB13C3 D 1 H -12.582912M TR

Series

RoHS Compliant (Pb-free) Low Current 3.3V 4 Pad

5mm x 7mm Ceramic SMD LVCMOS Oscillator

Frequency Tolerance/Stability

±50ppm over 0°C to +70°C

Duty Cycle

50 ±10(%)

Packaging Options

Tape & Reel

Nominal Frequency

12.582912MHz

Logic Control / Additional Output

Tri-State (High Impedance)

ELECTRICAL SPECIFICATIONS

Nominal Frequency 12.582912MHz

Frequency Tolerance/Stability ±50ppm over 0°C to +70°C (Inclusive of all conditions: Calibration Tolerance at 25°C, Frequency Stability

over the Operating Temperature Range, Supply Voltage Change, Ouput Load Change, First Year Aging at

25°C, Shock, and Vibration)

Supply Voltage 3.3Vdc ±10%

Input Current 3mA Maximum

Output Voltage Logic High (Voh) 90% of Vdd Minimum

Input Current Logic High (Ioh) -1.6mA

Output Voltage Logic Low (Vol) 10% of Vdd Maximum

Input Current Logic Low (Iol) +1.6mA

Rise/Fall Time 6nSec Maximum (Measured at 20% to 80% of waveform)

Duty Cycle 50 ±10(%) (Measured at 50% of waveform)

Load Drive Capability 15pF Maximum

Output Logic Type CMOS

Logic Control / Additional Output Tri-State (High Impedance)

Tri-State Input Voltage (Vih and Vil) 90% of Vdd Minimum or No Connect to Enable Output, 10% of Vdd Maximum to Disable Output (High

Impedance)

Standby Current 10µA Maximum (Disabled Output: High Impedance)

One Sigma Clock Period Jitter 25pSec Maximum

Start Up Time 10mSec Maximum

Storage Temperature Range -55°C to +125°C

ENVIRONMENTAL & MECHANICAL SPECIFICATIONS

Fine Leak Test MIL-STD-883, Method 1014, Condition A

Gross Leak Test MIL-STD-883, Method 1014, Condition C

Mechanical Shock MIL-STD-202, Method 213, Condition C

Resistance to Soldering Heat MIL-STD-202, Method 210

Resistance to Solvents MIL-STD-202, Method 215

Solderability MIL-STD-883, Method 2003

Temperature Cycling MIL-STD-883, Method 1010

Vibration MIL-STD-883, Method 2007, Condition A

www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 8/12/2010 | Page 1 of 6

EB13C3D1H-12.582912M TR

MECHANICAL DIMENSIONS (all dimensions in millimeters)

1.60 ±0.20

5.00

±0.15

7.00

±0.15

MARKING

ORIENTATION

3.68

±0.15

1.4 ±01 1.2 ±0.2

2.60

±0.15

5.08

±0.15

PIN CONNECTION

1 Tri-State

2 Ground

3 Output

4 Supply Voltage

LINE MARKING

1ECLIPTEK

212.582M

3XXYZZ

XX=Ecliptek Manufacturing

Code

Y=Last Digit of the Year

ZZ=Week of the Year

All Tolerances are ±0.1

Suggested Solder Pad Layout

Solder Land

(X4)

All Dimensions in Millimeters

2.88

1.81

2.0 (X4)

2.2 (X4)

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EB13C3D1H-12.582912M TR

OUTPUT DISABLE

(HIGH IMPEDANCE

STATE)

OUTPUT WAVEFORM & TIMING DIAGRAM

VOH

VOL

80% of Waveform

50% of Waveform

20% of Waveform

Fall

Time

Rise

Time TW

Duty Cycle (%) = TW/T x 100

VIH

VIL

tPLZ tPZL

CLOCK OUTPUT TRI-STATE INPUT

Supply

Voltage

(VDD)

Test Circuit for CMOS Output

Output

No Connect

or Tri-State

Ground

+ +

Power

Supply 0.01µF

(Note 1) 0.1µF

(Note 1) CL

(Note 3)

Note 1: An external 0.1µF low frequency tantalum bypass capacitor in parallel with a 0.01µF high frequency

ceramic bypass capacitor close to the package ground and VDD pin is required.

Note 2: A low capacitance (<12pF), 10X attenuation factor, high impedance (>10Mohms), and high bandwidth

(>300MHz) passive probe is recommended.

Note 3: Capacitance value CL includes sum of all probe and fixture capacitance.

Voltage

Meter

Current

Meter

Oscilloscope Frequency

Counter

Probe

(Note 2)

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DIA 50 MIN

DIA 20.2 MIN

DIA 13.0 ±0.2

2.5 MIN Width

10.0 MIN Depth

Tape slot in Core

for Tape Start

DIA 40 MIN

Access Hole at

Slot Location

1.5 MIN

Tape & Reel Dimensions

*Compliant to EIA 481A

EB13C3D1H-12.582912M TR

16.0

+0.3/-0.1

7.5 ±0.1

6.75 ±0.1

4.0 ±0.1

2.0 ±0.1

8.0 ±0.1 B0*

DIA 1.5 +0.1/-0.0

A0*

0.3 ±0.05

K0*

22.4 MAX

360 MAX

Quantity Per Reel: 1,000 units

16.4 +2.0/-0.0

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T Min

T Max

Critical Zone

T to T

L P

Ramp-up Ramp-down

t 25°C to Peak

t Preheat

StL

Temperature (T)

Time (t)

Recommended Solder Reflow Methods

EB13C3D1H-12.582912M TR

High Temperature Infrared/Convection

TS MAX to TL (Ramp-up Rate) 3°C/second Maximum

Preheat

- Temperature Minimum (TS MIN) 150°C

- Temperature Typical (TS TYP) 175°C

- Temperature Maximum (TS MAX) 200°C

- Time (tS MIN) 60 - 180 Seconds

Ramp-up Rate (TL to TP)3°C/second Maximum

Time Maintained Above:

- Temperature (TL)217°C

- Time (tL)60 - 150 Seconds

Peak Temperature (TP)260°C Maximum for 10 Seconds Maximum

Target Peak Temperature (TP Target) 250°C +0/-5°C

Time within 5°C of actual peak (tp)20 - 40 seconds

Ramp-down Rate 6°C/second Maximum

Time 25°C to Peak Temperature (t) 8 minutes Maximum

Moisture Sensitivity Level Level 1

Additional Notes Temperatures shown are applied to body of device.

www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 8/12/2010 | Page 5 of 6

T Min

T Max

Critical Zone

T to T

L P

Ramp-up Ramp-down

t 25°C to Peak

t Preheat

StL

Temperature (T)

Time (t)

Recommended Solder Reflow Methods

EB13C3D1H-12.582912M TR

Low Temperature Infrared/Convection 240°C

TS MAX to TL (Ramp-up Rate) 5°C/second Maximum

Preheat

- Temperature Minimum (TS MIN) N/A

- Temperature Typical (TS TYP) 150°C

- Temperature Maximum (TS MAX) N/A

- Time (tS MIN) 60 - 120 Seconds

Ramp-up Rate (TL to TP)5°C/second Maximum

Time Maintained Above:

- Temperature (TL)150°C

- Time (tL)200 Seconds Maximum

Peak Temperature (TP)240°C Maximum

Target Peak Temperature (TP Target) 240°C Maximum 1 Time / 230°C Maximum 2 Times

Time within 5°C of actual peak (tp)10 seconds Maximum 2 Times / 80 seconds Maximum 1 Time

Ramp-down Rate 5°C/second Maximum

Time 25°C to Peak Temperature (t) N/A

Moisture Sensitivity Level Level 1

Additional Notes Temperatures shown are applied to body of device.

Low Temperature Manual Soldering

185°C Maximum for 10 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)

High Temperature Manual Soldering

260°C Maximum for 5 seconds Maximum, 2 times Maximum. (Temperatures shown are applied to body of device.)

www.ecliptek.com | Specification Subject to Change Without Notice | Rev A 8/12/2010 | Page 6 of 6