SANGDEST
MICROELECTRONICS
Technical Data Green Products
Data Sheet N1202, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
240NQ...-1 SERIES
240NQ035-1/240NQ040-1/240NQ045-1
SCHOTTKY RECTIFIER
Applications:
● Switching power supply ● Converters ● Free-Wheeling diodes ● Reverse battery protection
Features:
• 150℃ TJ operation
• Unique high power, Half-Pak module
• Replaces three parallel DO-5’S
• Easier to mount and lower profile than DO-5’S
• High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• This is a Pb − Free Device
• All SMC parts are traceable to the wafer lot
• Additional testing can be offered upon request
Mechanical Dimensions: In Inches / mm
PRM1-1(HALF PAK Module)
MARKING,MOLDING RESIN
Marking for 240NQ035-1, 1st row SS YYWWL, 2nd row 240NQ035-1
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
SANGDEST
MICROELECTRONICS
Technical Data Green Products
Data Sheet N1202, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
240NQ...-1 SERIES
Maximum Ratings:
Characteristics Symbol Condition Max. Units
35 240NQ035-1
40 240NQ040-1
Peak Inverse Voltage VRWM -
45 240NQ045-1
V
Max. Average Forward
Current
IF(AV) 50% duty cycle @TC =96°C,
rectangular wave form
240 A
Max. Peak One Cycle Non-
Repetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
4080
A
Non-Repetitive Avalanche
Energy EAS TJ=25℃,IAS=48A,L=0.28 mH 324 mJ
Repetitive Avalanche Current IAR
Current decaying linearly to
zero in 1 μsec Frequency
limited by TJ max. VA=1.5×
VR typical
48 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
VF1 @ 240A, Pulse, TJ = 25 °C
@ 480A, Pulse, TJ = 25 °C
0.61
0.81 V
Max. Forward Voltage Drop*
VF2 @ 240A, Pulse, TJ = 125 °C
@ 480A, Pulse, TJ = 125 °C
0.55
0.74 V
IR1 @VR = rated VR TJ = 25 °C 20 mA
Max. Reverse Current (per
leg) * IR2 @VR = rated VR TJ = 125 °C 800 mA
Max. Junction Capacitance
(per leg) CT @VR = 5V, TC = 25 °C
fSIG = 1MHz 10300 pF
Typical Series Inductance
(per leg) LS Measured lead to lead 5 mm
from package body 5.0 nH
Max. Voltage Rate of Change dv/dt - 10,000 V/μs
z Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150 °C
Max. Storage Temperature Tstg - -55 to +150 °C
Maximum Thermal
Resistance Junction to Case RθJC DC operation 0.20 °C/W
Typical Thermal Resistance,
case to Heat Sink
Rθcs Mounting surface, smooth
and greased
0.15 °C/W
Mounting
Torque
23(min)
29(max)
Mounting Torque TM Non-lubricated threads
Terminal
Torque
35(min)
46(max)
Kg-cm
Approximate Weight wt - 25.6 g
Case Style PRM1-1
SANGDEST
MICROELECTRONICS
Technical Data Green Products
Data Sheet N1202, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
240NQ...-1 SERIES
SANGDEST
MICROELECTRONICS
Technical Data Green Products
Data Sheet N1202, Rev. -
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
240NQ...-1 SERIES
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
