Document Number: 83672 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 639
Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors
DESCRIPTION
The SFH615XXX features a large assortment of current
transfer ratio, low coupling capacitance and high isolation
voltage. These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plastic
DIP-4 package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead spacing.
Creepage and clearance distances of > 8 mm are achieved
with option 6. This version complies with 60950
(DIN VDE 0805) for reinforced insulation up to operation
voltage of 400 VRMS or DC.
FEATURES
• Low CTR degradation
• Good CTR linearity depending on forward
current
• Isolation test voltage, 5300 VRMS
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.100" (2.54 mm) spacing
• High common mode interference immunity (unconnected
base)
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
Note
For additional information on the available options refer to option information.
i179060
1
2
4
3E
C
A
C
ORDER INFORMATION
PART REMARKS
SFH615AA CTR 50 to 600 %, DIP-4
SFH615AB CTR 80 to 260 %, DIP-4
SFH615ABL CTR 200 to 600 %, DIP-4
SFH615ABM CTR 200 to 400 %, DIP-4
SFH615AGB CTR 100 to 600 %, DIP-4
SFH615AGR CTR 100 to 300 %, DIP-4
SFH615AY CTR 50 to 150 %, DIP-4
SFH615AA-X006 CTR 50 to 600 %, DIP-4 400 mil (option 6)
SFH615AA-X007 CTR 50 to 600 %, SMD-4 (option 7)
SFH615ABM-X006 CTR 200 to 400 %, DIP-4 400 mil (option 6)
SFH615ABM-X007 CTR 200 to 400 %, SMD-4 (option 7)
SFH615AGB-X006 CTR 100 to 600 %, DIP-4 400 mil (option 6)
SFH615AGB-X009 CTR 100 to 600 %, SMD-4 (option 9)
SFH615AGR-X006 CTR 100 to 300 %, DIP-4 400 mil (option 6)
SFH615AGR-X007 CTR 100 to 300 %, SMD-4 (option 7)
SFH615AY-X006 CTR 50 to 150 %, DIP-4 400 mil (option 6)
SFH615AY-X008 CTR 50 to 150 %,SMD-4 (option 8)
SFH615AY-X009 CTR 50 to 150 %,SMD-4 (option 9)
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83672
640 Rev. 1.7, 10-Dec-08
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
DC forward current IF60 mA
Surge forward current tP ≤ 10 ms IFSM 2.5 A
Power dissipation Pdiss 100 mW
OUTPUT
Collector emitter voltage VCE 70 V
Emitter collector voltage VEC 7V
Collector current IC50 mA
tP ≤ 10 ms IC100 mA
Total power dissipation Pdiss 150 mW
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter
and detector Comparative tracking
index per DIN IEC 112/VDE 0303, part 1
CTI ≥ 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Ambient temperature range Tamb - 55 to + 100 °C
Soldering temperature (2) max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 60 mA VF1.25 1.65 V
Reverse current VR = 6 V IR0.01 10 µA
Capacitance VR = 0 V, f = 1 MHz CO13 pF
Thermal resistance Rthja 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 5.2 pF
Thermal resistance Rthja 500 K/W
Collector emitter saturation
voltage IF = 10 mA, IC = 2.5 mA VCEsat 0.25 0.4 V
Coupling capacitance CC0.4 pF
Document Number: 83672 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 641
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Switching Operation (with Saturation) Fig. 2 - Current Transfer Ratio (Typ.) vs. Temperature
COUPLER
Collector emitter leakage
current VCEO = 10 V
SFH615AA ICEO 10 100 nA
SFH615AGB ICEO 10 100 nA
SFH615AGR ICEO 10 100 nA
SFH615ABM ICEO 10 100 nA
SFH615ABL ICEO 10 100 nA
SFH615AY ICEO 10 100 nA
SFH615AB ICEO 10 100 nA
ELECTRICAL CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFIF = 5 mA, VCE = 5 V
SFH615AA CTR 50 600 %
SFH615AGB CTR 100 600 %
SFH615AGR CTR 100 300 %
SFH615ABM CTR 200 400 %
SFH615ABL CTR 200 600 %
SFH615AY CTR 50 150 %
SFH615AB CTR 80 260 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time IF = 5 mA ton 2µs
Turn-off time IF = 5 mA toff 25 µs
isfh615aa_01
1kΩ
VCC =5V
47 Ω
IF
%
10
3
5
10
2
10
1
- 25 7525050°C
5
TA
isfh615aa_02
IF = 10 mA, VCC = 5.0 V
1
2
3
4
I
C
I
F
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83672
642 Rev. 1.7, 10-Dec-08
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Fig. 3 - Transistor Capacitance (Typ.) vs. Collector Emitter Voltage
Fig. 4 - Permissible Diode Forward Current vs.
Ambient Temperature
Fig. 5 - Output Characteristics (Typ.) Collector Current vs.
Collector Emitter Voltage
Fig. 6 - Permissible Pulse Handling Capability Forward Current vs.
Pulse Width
Fig. 7 - Diode Forward Voltage (Typ.) vs. Forward Current
Fig. 8 - Permissible Power Dissipation vs. Temperature
0
5
10
15
20
pF
10-2 10-1 100101102
V
C
Ve
isfh615aa_03
f = 1.0 MHz
CCE
mA
0
30
60
90
120
0 50 1007525 °C
I
F
T
A
isfh615aa_04
mA
30
10
20
0
015105V
I
c
V
CE
isfh615aa_05
I
F
= 14 mA
I
F
= 12 mA
I
F
= 10 mA
I
F
= 6 mA
I
F
= 8 mA
I
F
= 4 mA
I
F
= 2 mAI
F
= 1 mA
mA
5
5
101
5
102
103
104
10-5 10-4 10-3 10-2 10-1 100101
s
IF
tp
isfh615aa_06
tp
IF
T
T
D =
tp
D = 0
0.005
0.01
0.02 Pulse cycle
D = parameter
tp
IF
0.05
0.1
0.2
0.5
DC
1.2
V
1.1
1.0
0.9
10
-1
10
1
10
2
5 mA5510
0
V
F
I
F
isfh615aa_07
25 °C
50 °C
75 °C
mW
0
50
100
150
200
0 50 1007525 °C
P
tot
T
A
isfh615aa_08
Transistor
Diode
Document Number: 83672 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.7, 10-Dec-08 643
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
i178027
0.255 (6.48)
0.268 (6.81)
1
2
4
3
0.179 (4.55)
0.190 (4.83)
Pin one ID
0.030 (0.76)
0.045 (1.14)
4°
typ.
0.100 (2.54)
0.130 (3.30)
0.150 (3.81)
0.020 (0.508)
0.035 (0.89)
10°
3° to 9°
0.018 (0.46)
0.022 (0.56)
0.008 (0.20)
0.012 (0.30)
0.031 (0.79) typ.
0.050 (1.27) typ.
0.300 (7.62) typ.
0.110 (2.79)
0.130 (3.30)
0.230 (5.84)
0.250 (6.35)
0.050 (1.27)
ISO method A
min.
15° max.
Option 9
18486
0.375 (9.53)
0.395 (10.03)
0.300 (7.62) ref.
0.020 (0.51)
0.040 (1.02)
0.315 (8.00)
0.040 (0.102)
0.098 (0.249)
0.012 (0.30) typ.
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83672
644 Rev. 1.7, 10-Dec-08
SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Reliability, 5300 VRMS
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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