2008. 8. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA63/64
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 5
GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25℃)
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
*Pulse Test : Pulse Width≦300μS, Duty Cycle≦2.0%
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
TYPE MMBTA63 MMBTA64
MARK AGX AFX
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CES IC=-0.1mA, IB=0 -30 - - V
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -0.1 μA
Emitter Cut-off Current IEBO VEB=-10V, IC=0 - --0.1 μA
DC Current Gain
MMBTA63 hFE(1) IC=-10mA, VCE=-5V 5,000 - -
MMBTA64 10,000 - -
MMBTA63 hFE(2) IC=-100mA, VCE=-5V 10,000 - -
MMBTA64 20,000 - -
Collector-Emitter
Saturation Voltage MMBTA63/64 VCE(sat) IC=-100mA, IB=-0.1mA - - -1.5 V
Base Emitter
Voltage MMBTA63/64 VBE IC=-100mA, VCE=-5V - - -2.0 V
Current Gain
Bandwith Product MMBTA63/64 fT
IC=-10mA, f=100MHz
VCE=-5V 125 - - MHz
MARK SPEC
Lot No.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base
Voltage MMBTA63/64 VCBO -30 V
Collector-Emitter
Voltage MMBTA63/64 VCES -30 V
Emitter-Base Voltage VEBO -10 V
Collector Current
DC IC-500 mA
Pulse ICP -1 A
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃