BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor MMST3904
Document number: BL/SSSTF051 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO I
C=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO I
E=10μA,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 0.05 μA
Collector cut-off current ICEO V
CE=40V,IB=0 0.5 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA
DC current gain hFE
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
40
70
100
60
30
300
Collector-emitter saturation voltage VCE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA 0.25
0.3 V
Base-emitter saturation voltage VBE(sat)
IC=10mA,IB=1mA
IC=50mA,IB=5mA
0.65
0.85
0.95 V
Transition frequency fT
VCE=20V, IE= 10mA
f=100MHz 300 MHz
Collector output capacitance Cob VCB=5V, IE=0,f=1MHz 4 pF
Noise figure NF VCE=5V,IC=0.1mA,
f=1KHz,Rg=1KΩ 5 dB
Delay time td 35 nS
Rise time tr
VCC=3V,VBE=0.5V,
IC=10mA,IB=1mA 35 nS
Storage time ts 200 nS
Fall time tf
VCC=3V,IC=10mA,
IB1=IB2=1mA 50 nS
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified