3875081 GE SOLID STATE OL Def) 3475081 001722 a Po 733-27 Darlington Power Transistors - 2N6043, 2N6044, 2N6045 File Number 1151 TERMINAL DESIGNATIONS 8-Ampere N-P-N Darlington Power Transistors 60-, 80-, 100-Volts, 75 Watts cl | dt c Gain of 1000 at 4 A (2N6043, 2N6044) mance) () pls Gain of 1000 at 3 A (2N6045) oe TOP VIEW 8 Features: 92cS-39969 @ Operates from IC without predriver Applications: = Power switching @ Audio amplifiers JEDEC TO-220AB m@ Hammer drivers m Series and shunt regulators The 2N6043, 2N6044, and 2N6045 are monolithic silicon n-p-n Darlington transistors designed for low- and medium-frequency power applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. These devices are sup- plied in the JEDEC TO-220AB (VERSAWATT) plastic package. 92CS-28597 Fig. 1 Schematic diagram for all types. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6043 2N6044 2N6045 60 80 100 60 80 100 5 8 16 0.12 S prp<<< 75 See Fig. 2 ________ ~65 to 150 _____ C L At distances = 1/8 in. (3.17 mm) from Case for 10S MAX. cc cece eee e eee ene terete renee rece enees 235 C *In accordance with JEDEC registration data. 228 0768 F-073875081 GE SOLID state J De ff sa7soa1 oou?ce? O i T3329 Darlington Power Transistors 2N6043, 2N6044, 2N6045 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 259C Unless Otherwise Specified TEST CONDITIONS LIMITS U CHARACTERISTIC | VOLTAGE/CURRENT v SYMBOL Vde Adc 2N6043 2N6044 2N6045 T VcelVBe] 'c | tp | MIN.| MAX. | MINIMAX. | MINIMAX. | S * IcEO 100 0 - - -| - | 20 80 0 - - | 20 -f- 60 0 - 20 -|- -~j- * lcEV 100 j}-1.5 _ _- _ 20 80 |-1.5 - - ~ | 20 -~-j- BA 60 |-1.5 - 20 -{- -{- 100 |-1.5 - - -j- {200 ps Tc=125C 80 /-1.5 - - | 200 -j- 60 |-1.5 - 200 -|- -f- * lego 5 0 - 2 - 2 - 2 mA *) Vceo(sus) 0.18] 0 | 60 - 80 | - 100 | Vv IcBo 100b - - -|- | 20 80b - - - | 20 -|- HA 60b = 20 -|- -|- 4 4 n000 } 20,000! 1000/20,000); - | * hee 4 3 - - -|- 1000/20,000 4 8 100 - 100] 100 | 4 4 - 2.8 - | 28 -j- * VBE 4 3 _ - -~|- -| 28] y *! Vegel(sat) 8 | 0.08} 4.5 - | 4.5 - | 4.5 4 | 0.016} 2 -| 2 -|- *! Vog(sat} 3 | 0.012} ~- - -|- - 21Vv 8 | 0.08 | 4 - 4 - Ve 8a - 4 - 4 - Vv *| be 4 3 300 - 300] - 300] - f=1 kHz * Ihggl . f=1 MHz 4 3 4 ~ 4) - 4) - *iC obo b| _ _ fo MHz 10 200 200 200 |pF 'S/o 30 2.5 - 25| a56)/- |A t=1 s, nonrep. Rese - 1.67 | 1.67 | 1.67 |}C/W * In accordance with JEDEC registration data. 8 Pulsed: Pulse duration = 300 us, duty factor = 1.8%. Vp value. 229 0769 F-083875081 GE SOLID STATE O1 DE 9475081 O0172ec8 1 I } T-33-29 Darlington Power Transistors 2N6043, 2N6044, 2N6045 8 CASE EMER 25C (CURVES MUST LINEARLY WITH INCREASE IN TEMPERATURE) (MAX.) PULSED < t vo g be 2 ww x > 3 NONREPETITIVE PULSE Vegg (MAX. 60 VC Vceo (MAX.)= 80 Vi 2N6044) VcEQ (MAX. )= 100 V( 2N6045} 4 686 2 a) 2 4 668 COLLECTOR - TO-EMITTER VOLTAGE (Vop) 920N 31124 Fig. 2 Maximum operating areas for all types (To 25C). TO-EMITTER tVce)=4 NOTE CURRENT DERATING AT CONST/ t VOLTAGE APPLIES ONLY TO SHE SISSIPATION- LIMITED PORTION AND THE Igy, -LIMITED PORTION OF MAXIMUM OPERATING AREA CURVE, 00 HOT DERATE THE > t 4 t On KE e 8 gy ee SPECIFIED VALUE FOR Ic MAX rel og T aw? ag Z5 8 o, ee Ss wv "Vay ee . Ss 5 Pe a3 P nN v PERCENTAGE OF MAXIMUM DISSIPATION AT Tey HH it + TT ST 8 1 00 125 180 173 200 CASE TEMPERATURE [To}*C o1 925-20696M COLLECTOR CURRENT (I}A szcs-Sil2t Fig. 3 Derating curve for all types. Fig. 4 Typical de beta characteristics for all types. 230 = 0770 F-093875081 GE SOLID sTaTe O41 DE ff 3975081 OOL?eed 4 ) T-B3-29 wamington rower Transistors 2N6043, 2N6044, 2N6045 w o Q 2 2 e w o z = Ee 6 L 5 a Zz COLLECTOR CURRENT {Ic} 3A COLLECTOR-TO- EMITTER VOLTAGE (Voges edV CASE. TEMPERATURE (Tc): 25C 2 a 88 4 68 2 4 686 ot 10 100 FREQUENCY {f) kHz REVERSE VOLTAGE (Va I-V gacs- 31122 . . . . s2cs-S1teSRt Fig. 6 Typical common-base input or output Fig. 5 Typical smal!-signal gain for ail types. capacitance characteristics as a function of reverse voltage for ail types. 231 0771 F-10