MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO 10-126 AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage : MJE180 Veso 60 Vv : MJE181 80 Vv : MJE182 100 Vv Collector-Emitter Voltage VcEo : MJE180 40 Vv : MJE181 60 Vv : MJE182 80 Vv Emitter-Base Voltage VeBo 7 Vv Collector Current (DC) le 3 A Collector Current (Pulse) le 6 A Base Current (DC) lb 1 A Collector Dissipation (Ta=25C) Pe 1.5 Ww Collector Dissipation ( Tc=25C) Pe 12.5 Ww Junction Temperature Ty 150 C Storage Temperature Tsta -65 ~ 150 C 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (1,=25c) sapasenqnsennssanppannngecanscasacnasssesaned FAIRCHILD re SEMICONDUCTOR -w 1999 Fairchild Semiconductor Corporation Characteristic Symbol Test Conditions Min Max Unit Collector Emitter Sustaining Voltage : MJE180 Vceo(sus) lo = 10mA, Ip= 0 40 Vv : MJE181 60 Vv : MJE182 80 Vv Collector Cutoff Current : MJE180 leBo Vcp = 60V, Ip=0 0.1 pA : MJE181 Vop = 80V, lIe=0 0.1 LA : MJE182 Vop = 100V, Ie= 0 0.1 bA : MJE180 Vop = 60V, le= 0, To = 150C 0.1 mA : MJE1814 Vea = 80V, Ie= 0, Te = 150C 0.1 mA : MJE182 Vee = 100V, Ir = 0, Te = 150C 0.4 mA Emitter Cutoff Current lego Vee= 7V, Ic=0 0.4 LA DC Current Gain Hre Voe = 1V, lo= 100mA 50 250 Voe= 1V, Io= 500mMA 30 Ver = 1V, Io= 1.54 12 Collector Emitter Saturation Voltage Voe(sat) le = 500mA, Ig = 50MA 0.3 Vv Io= 1.5A, Ip= 150mMA 0.9 Vv Io= 3A, Ip = GOOMA 17 Vv Base-Emitter Saturation Voltage Vee(sat) lo= 1.5A, Ip= 150MA 1.5 Vv Io= 3A, Ip = GOOMA 2.0 Vv Base Emitter On Voltage Vpe(on) Voe= 1V, Io= 500MA 1.2 Vv Current Gain-Bandwidth Product ff Vee = 10V, Ic = 100mA, f = 10MHz 50 MHz Output Capacitance Cop Vg = 10V, le= 0, f= 0.1MHz 30 pF Rev. B.1MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR STATIC CHARACTERISTIC DC CURRENT GAIN 1000 500 4 b 200 S z & & 100 3 3 z 50 iu S = u 3 20 a 2 g u 10 < = a 5 2 0 41 1 2 3 4 5 6 7 a 9g 10 10 20 50 100 200 500 1000 2000 S000 10000 Vce(), COLLECTOR-EMITTER VOLTAGE Io(mA), COLLECTOR CURRENT BASE-EMITTER SATURATION VOLTAGE COLLECTOR OUTPUT CAPACITANCE COLLECTOR-EMITTER SATURATION VOLTAGE ooo 10.1 ' 720! u ? 500 ie=0 3 ? 200 > 5! 8 100 5 eos 3G 50 2 < a a % 3 g 02 x 20 = wk 8 01 Voe(sat) $ 10 yw oO > gos 5 > 0.02 2 0.01 0.02 0.05 O1 02 os 1 2 4 O01 022 O58 1 2 5 10 20 50 100 Ic(A), COLLECTOR CURRENT Vea(V), COLLECTOR-BASE VOLTAGE POWER DERATING SAFE OPERATING AREA 10 5 , 2 Zz 3 a E 1 < a > nan oO 3 = 0.5 a & 8 u a = 4 02 2 3 : 2 on z ra 3 0.05 0.02 2.01 25 50 75 100 125 150 175 200 1 2 5 10 20 50 100 To(C), CASE TEMPERATURE Vce(), COLLECTOR-EMITTER VOLTAGE narearenpeeapensanpassnanzansesarazsssssenenet eee SEMICONDUCTOR -w