2N4919 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 !  

 

. . . designed for driver circuits, switching, and amplifier applications. These

high–performance plastic devices feature:

•Low Saturation Voltage — VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp

•Excellent Power Dissipation Due to Thermopad Construction —

PD = 30 W @ TC = 25

•Excellent Safe Operating Area

•Gain Specified to IC = 1.0 Amp

•Complement to NPN 2N4921, 2N4922, 2N4923

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Ratings

ÎÎÎ

Symbol

ÎÎÎÎ

2N4918

ÎÎÎ

2N4919

ÎÎÎÎ

2N4920

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous (1)

ÎÎÎ

IC*

ÎÎÎÎÎÎÎÎÎ

1.0

3.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25°C

Derate above 25

ÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.24

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating & Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

4.16

ÎÎÎ

C/W

*Indicates JEDEC Registered Data for 2N4918 Series.

(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current–handling capability of the

device (See Figure 5).

(2) Recommend use of thermal compound for lowest thermal resistance.

025 50 75 100 125 150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N4918/D

 Motorola, Inc. 1995







*Motorola Preferred Device

3 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

30 WATTS



CASE 77–08

TO–225AA TYPE

REV 7

  

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0) 2N4918

2N4919

2N4920

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0) 2N4918

(VCE = 30 Vdc, IB = 0) 2N4919

(VCE = 40 Vdc, IB = 0) 2N4920

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)

(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.1

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated VCB, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

150

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1)

(IC = 1.0 Adc, IB = 0.1 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SMALL–SIGNAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

100

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data.

(1) Pulse Test: PW

[

300 µs, Duty Cycle

[

2.0%

Figure 2. Switching Time Equivalent Test Circuit

5.0

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (mA)

VCC = 30 V

IC/IB = 20

t, TIME ( s)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

0.05 20 30 50 70 100 200 700 1000

Vin

VBE(off)

APPROX 9.0 V

TURN–OFF PULSE

APPROX

–11 V

VCC

SCOPE

Cjd << Ceb

+4.0 V

t1 < 15 ns

100 < t2 < 500

t3 < 15 ns

DUTY CYCLE

≈

2.0%

Vin

0.07

3.0 TJ = 25

TJ = 150

IC/IB = 10, UNLESS NOTED

VCC = 60 V

VCC = 30 V

VBE(off) = 0 300 500

0Vin

APPROX

–11 V

RB and RC

varied to

obtain desired

current levels

VBE(off) = 2.0 V

VCC = 60 V

  

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(t) = r(t)

JC = 4.16

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

1.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 3.0 5.0 10 20 30 50 10070

0.2

IC, COLLECTOR CURRENT (AMP)

TJ = 150

Cdc

5.0 ms 100

7.0

PULSE CURVES APPLY BELOW

RATED VCEO

1.0 ms

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMIT @ TC = 25

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE opera-

tion i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

s, STORAGE TIME ( s)

′

f, FALL TIME ( s)

5.0

Figure 6. Storage Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

′

= ts – 1/8 tf

0.07

100

3.0

0.7

200 300

TJ = 25

TJ = 150

IC/IB = 20 5.0

Figure 7. Fall Time

IC, COLLECTOR CURRENT (mA)

2.0

1.0

0.5

0.3

0.2

0.1

0.05 20 30 50 70 500 700 1000

0.07

100

3.0

0.7

200 300

TJ = 25

TJ = 150

IC/IB = 10

IC/IB = 20

IC/IB = 10

IB1 = IB2

VCC = 30 V

IB1 = IB2

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4Motorola Bipolar Power Transistor Device Data

TYPICAL DC CHARACTERISTICS

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

–0.2

1000

2.0

Figure 8. Current Gain

IC, COLLECTOR CURRENT (mA)

10 3.0 5.0 10 20 30 200 300 500 2000

500

200

100

Figure 9. Collector Saturation Region

1.0

0.2 IB, BASE CURRENT (mA)

00.3 0.5 1.0 2.0 5.0 10 20 50 200

0.8

0.6

0.4

0.2

IC = 0.1 A

TJ = 25

0.25 A 0.5 A 1.0 A

700

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 1.0 V

50 100 1000 3.0 30 100

108

Figure 10. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

30 60 90 120 150

107

105

104

103

VCE = 30 V

IC = 10 ICES

IC = 2x ICES

≈

ICES

ICES VALUES

OBTAINED FROM

FIGURE 13

106

1.5

2.0

IC, COLLECTOR CURRENT (mA)

5.0 10 20 30 50 100 200 300 2000

1.2

0.9

0.6

0.3

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 11. “On” Voltage

3.0 500 1000

VBE @ VCE = 2.0 V

102

Figure 12. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

101

100

10–1

, COLLECTOR CURRENT ( A)

10–2

103–0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5

VCE = 30 V

TJ = 150

100

FORWARD

IC = ICES

104

+2.5

2.0

Figure 13. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

3.0 5.0 10 20 30 50 100 200 2000

TJ = –55

C to +100

TEMPERATURE COEFFICIENTS (mV/ C)

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB FOR VBE

VC FOR VCE(sat)

TJ = 100

C to 150

*APPLIES FOR IC/IB < hFE @ VCE

1.0 V

+1.0

300 500 1000

REVERSE

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Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

  

6Motorola Bipolar Power Transistor Device Data

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2N4918/D

*2N4918/D*

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