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tm
November 2008
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
©2008 Fairchild Semiconductor Corporation
FDZ391P Rev.B1 www.fairchildsemi.com
1
BOTTOM TOP
DD
SS
SG
Pin 1
S
G
D
FDZ391P
P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET
-20 V, -3 A, 85 mΩ
Features
Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A
Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A
Max rDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A
Occupies only 1.5 mm2 of PCB area
Ultra-thin package: less than 0.4 mm height when mounted
to PCB
RoHS Compliant
General Description
Designed on Fairchild's advanced 1.5 V PowerTrench process
with state of the art "low pitch" Thin WLCSP packaging process,
the FDZ391P minimizes both PCB space and rDS(on). This
advanced WLCSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rDS(on).
Applications
Battery management
Load switch
Battery protection
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -20 V
VGS Gate to Source Voltage ±8 V
IDDrain Current -Continuous TA = 25 °C (Note 1a) -3 A
-Pulsed -15
PDPower Dissipation TA = 25 °C (Note 1a) 1.9 W
Power Dissipation TA = 25 °C (Note 1b) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 133
Device Marking Device Package Reel Size Tape Width Quantity
6 FDZ391P WL-CSP Thin 7 ’’ 8 mm 5000 units
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
FDZ391P Rev.B1 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristic s
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V -20 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, referenced to 25 °C -12 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA
IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA -0.4 -0.6 -1.5 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250 µA, referenced to 25 °C 2 mV/°C
rDS(on) Drain to Source On Resistance
VGS = -4.5 V, ID = -1 A 74 85
mΩ
VGS = -2.5 V, ID = -1 A 90 123
VGS = -1.5 V, ID = -1 A 140 200
VGS = -4.5 V, ID = -1 A TJ = 125 °C 100 123
ID(on) On to State Drain Current VGS = -4.5 V, VDS = - 5 V -10 A
gFS Forward Transconductance VDS = -5 V, ID = -1 A 7 S
Ciss Input Capacitance VDS = -10 V, VGS = 0 V,
f = 1 MHz
800 1065 pF
Coss Output Capacitance 155 205 pF
Crss Reverse Transfer Capacitance 90 135 pF
RgGate Resistance f = 1 MHz 9 Ω
td(on) Turn-On Delay Time VDD = -10 V, ID = -1 A
VGS = -4.5 V, RGEN = 6 Ω
11 20 ns
trRise Time 10 20 ns
td(off) Turn-Off Delay Time 50 80 ns
tfFall Time 30 48 ns
QgTotal Gate Charge VGS = -4.5 V
VDD = -10 V
ID = -1 A
913nC
Qgs Gate to Source Gate Charge 1 nC
Qgd Gate to Drain “Miller” Charge 2 nC
ISMaximum continuous Drain-Source Diode Forward Current -1.1 A
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -1.1 A (Note 2) -0.7 -1.2 V
trr Reverse Recovery Time IF = -1 A, di/dt = 100 A/µs 21 ns
Qrr Reverse Recovery Charge 5 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
a. 65 °C/W when mounted on
a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a
minimum pad of 2 oz copper.
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
FDZ391P Rev.B1 www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
12
14
16
V
GS
= -3.5 V
V
GS
= -4.5 V
PULSE DU RATION = 300
µ
s
DUTY CYCLE = 2.0% MAX
V
GS
=
-2.5 V
V
GS
= - 1 .5 V
V
GS
=
-2.0 V
-ID, DRAIN CURRENT (A)
-V
DS
, DRA IN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0246810121416
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
=
-4.5 V
PULSE DURATION = 300
µ
s
DUTY CYCLE = 2.0% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
, DRAIN CURRENT(A)
V
GS
=
-2.5 V
V
GS
= -2.0 V
V
GS
= - 1 .5 V
V
GS
=
-3.5 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
I
D
= -1 A
V
GS
= - 4 .5 V
NORMALIZED
DRAIN TO SOURCE ON-RESI S T ANCE
T
J
, JUNCTION TEMPERATURE
(
o
C
)
vs Junction Te mperature Figure 4.
12345
40
80
120
160
200
240
PULSE D U RATION = 300
µ
s
DUTY CYCLE = 2.0% MAX
T
J
= 125
o
C
T
J
= 25
o
C
I
D
= - 0.5 A
r
DS(on)
, DRAIN TO
SOURCE ON-RESISTANCE
(
m
Ω
)
-V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.5 1.0 1.5 2.0 2.5
0
3
6
9
12
15
V
DD
= -5 V
PULSE DURATION = 300
µ
s
DUTY CYCLE = 2.0% MA X
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
-I
D
, DRAIN CURRENT (A)
-V
GS
, GATE TO SOURCE VOLTA GE (V)
Figure 6.
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
TJ
= 125
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTA GE (V)
60
Source to Drain Diode
Forward Voltage vs Source Current
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
FDZ391P Rev.B1 www.fairchildsemi.com
4
Figure 7.
024681012
0
1
2
3
4
5
I
D
= -1 A
V
DD
= -15 V
V
DD
= -10 V
V
DD
= -5 V
Qg, GATE CHARGE(nC)
-V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
20
50
f = 1 MHz
V
GS
= 0 V
CAPACITANCE ( pF)
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
2000
Capacitance vs Drain
to Source Voltage
Figure 9.
25 50 75 100 125 150
0
1
2
3
4
T
A
, CASE T EMPERATURE
(
o
C
)
V
GS
= - 2.5 V
V
GS
= - 4 .5 V
R
θ
JA
= 65
o
C/W
-I
D
, DRAI N CURRENT (A)
Maximum Continuous Drain
Current vs Ambient Temperature Figure 10.
0.1 1 10
0.01
0.1
1
10
10 s
60
DC
1 s
100 ms
10 ms
1 ms
100 us
SINGLE PULSE
T
J
= MAX R A TED
R
θ
JA
= 133
o
C/W
T
A
= 25
o
C
THIS AREA IS
LIMITED BY r
DS(on)
-V
S
, SOURCE1 TO SOURCE2 VOLTAGE (V)
-I
S
, SOURCE1 TO SOURCE2 CURRENT (A)
30
Forward Bias Safe
Operating Area
Figure 11. Single Pulse Maximum Power Dissipation
10
-3
10
-2
10
-1
110
100 1000
1
10
0.5
V
GS
= -10 V
SINGLE PULSE
R
θ
JA
= 133
o
C/W
T
A
= 25
o
C
P
(
PK
)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
50
Typical Characteristics TJ = 25 °C unless otherwise noted
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
FDZ391P Rev.B1 www.fairchildsemi.com
5
Figure 12. Transient Thermal Response Cu rve
10
-3
10
-2
10
-1
110
100 1000
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
t, RECTANG ULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
SINGLE PULSE
R
θ
JA
= 133
o
C/W
2
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
FDZ391P Rev.B1 www.fairchildsemi.com
6
Dimensional Outline and Pad Layout
FDZ391P Rev.B1 www.fairchildsemi.com
7
FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET
Rev. I37
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