PUMH1,115 - NXP Semiconductors

1. Product profile

1.1 General description

NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted

Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PEMH1; PUMH1

NPN/NPN resistor-equipped transistors;

R1 = 22 k, R2 = 22 k

Rev. 5 — 2 December 2011 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement PNP/PNP

complement Package

configuration

NXP JEITA

PEMH1 SOT666 - PEMD2 PEMB1 ultra small and flat lead

PUMH1 SOT363 SC-88 PUMD2 PUMB1 very small

100 mA output current capability Reduces component count

Built-in bias resistors Reduces pick and place costs

Simplifies circuit design AEC-Q101 qualified

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Product data sheet Rev. 5 — 2 December 2011 2 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1

001aab555

6 45

1 32

65 4

123

TR1 TR2

R2 R1

sym063

Tabl e 4. Ordering information

Type number Package

Name Description Version

PEMH1 - plastic surface-mounted package; 6 leads SOT666

PUMH1 SC-88 plastic surface-mounted package; 6 leads SOT363

Table 5. Marking codes

Type number Marking code[1]

PEMH1 H2

PUMH1 H*2

Product data sheet Rev. 5 — 2 December 2011 3 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage

positive - +40 V

negative - 10 V

IOoutput current - 100 mA

ICM peak collector current single pulse;

tp1ms -100mA

Ptot total power dissipation Tamb 25 C

PEMH1 (SOT666) [1][2] -200mW

PUMH1 (SOT363) [1] -200mW

Per device

Ptot total power dissipation Tamb 25 C

PEMH1 (SOT666) [1][2] -300mW

PUMH1 (SOT363) [1] -300mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 5 — 2 December 2011 4 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve for SOT363 (SC-88) and SOT666

Tamb (°C)

-75 17512525 75-25

006aac749

200

100

300

400

Ptot

(mW)

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

Rth(j-a) thermal resistance from

junction to ambient in fre e ai r

PEMH1 (SOT666) [1][2] - - 625 K/W

PUMH1 (SOT363) [1] - - 625 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in fre e ai r

PEMH1 (SOT666) [1][2] - - 417 K/W

PUMH1 (SOT363) [1] - - 417 K/W

Product data sheet Rev. 5 — 2 December 2011 5 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

FR4 PCB, standard footprint

Fig 2. Per transistor: T ransient thermal impedance from junction to ambient as a function of pulse duration for

PEMH1 (SOT666); typical values

FR4 PCB, standard footprint

Fig 3. Per transistor: T ransient thermal impedance from junction to ambient as a function of pulse duration for

PUMH1 (SOT363); typical values

006aac751

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac750

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33

0.2

0.1 0.05

0.02 0.01

Product data sheet Rev. 5 — 2 December 2011 6 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

7. Characteristics

[1] Characteristics of built-in transistor

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

ICBO collector-base cut-off

current VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter cut-off

current VCE =30V; I

B=0A - - 100 mA

VCE =30V; I

B=0A;

Tj= 150 C--5A

IEBO emitter-base cut-off

current VEB =5V; I

C=0A - - 180 A

hFE DC current gain VCE =5V; I

C=5mA 60 - -

VCEsat collector-emitter

saturation voltage IC=10mA; I

B=0.5mA - - 150 mV

VI(off) off-state input voltage VCE =5V; I

C= 100 A- 1.10.8V

VI(on) on-state input voltage VCE =0.3V; I

C=5mA 2.5 1.7 - V

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz --2.5pF

fTtransition frequency VCE =5V; I

C=10mA;

f=100MHz [1] -230-MHz

Product data sheet Rev. 5 — 2 December 2011 7 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

IC/IB=20

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Collec tor-emitter satu ration voltage as a

function of collector current; typical values

VCE =0.3V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

VCE =5V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

Fig 6. On-state input voltage as a function of

collector current; typical valu es Fig 7. Off-state input voltage as a function of

collector current; typical values

IC (mA)

10-1 102

101

006aac794

102

103

hFE

(2)

(3)

(1)

006aac795

IC (mA)

10-1 102

101

10-1

VCEsat

(V)

10-2

(1) (2) (3)

006aac796

IC (mA)

10-1 102

101

VI(on)

(V)

10-1

(1)

(2)

(3)

IC (mA)

10-1 101

006aac797

VI(off)

(V)

10-1

(1)

(2)

(3)

Product data sheet Rev. 5 — 2 December 2011 8 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

f=1MHz; T

amb =25CV

CE =5V; T

amb =25C

Fig 8. Collector capacitance as a function of

collector-base voltage; typical values Fig 9. Transition frequency as a function of collector

current; typical values of built-in transistor

VCB (V)

0504020 3010

006aac798

(pF)

006aac757

IC (mA)

10-1 102

101

102

103

(MHz)

Fig 10. Package outline PEMH1 (SOT666) Fig 11. Package outline PUMH1 (SOT3 63)

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 5 — 2 December 2011 9 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type

number Package Description Packing quantity

3000 4000 8000 10000

PEMH1 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMH1 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Reflow soldering is the only recommended soldering method.

Fig 12. Reflow soldering foo tprin t PEMH1 (SOT666)

solder lands

placement area

occupied area

solder paste

sot666_fr

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.0750.538

Dimensions in mm

Product data sheet Rev. 5 — 2 December 2011 10 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Fig 13. Reflow soldering footprint PUMH1 (SOT363)

Fig 14. Wave soldering footprint PUMH1 (SOT363)

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Product data sheet Rev. 5 — 2 December 2011 11 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMH1_PUMH1 v.5 20111202 Product data sheet - PEMH1_PUMH1 v.4

Modifications: •The format of this document has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Section 1 “Product profile”: updated

•Section 4 “Marking”: updated

•Figure 1 to 9: added

•Section 6 “Thermal characteristics”: updated

•Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to

VI(off) off-state input voltage, ICEO up dated, fT added

•Section 8 “Test in f ormation”: added

•Section 9 “Package outline”: superseded by minimized package outline drawings

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PEMH1_PUMH1 v.4 200310 08 Product data sheet - PEMH1 v.1

PUMH1 v.3

PEMH1 v.1 20011022 Preliminary specification - -

PUMH1 v.3 19990520 Product specification - PUMH1 v.2

PUMH1 v.2 19980806 Product specification - PUMH1 v.1

PUMH1 v.1 19971212 Product specification - -

Product data sheet Rev. 5 — 2 December 2011 12 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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full information. For detailed and full information see the relevant full data

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 5 — 2 December 2011 13 of 14

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PEMH1; PUMH1

NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 k

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 2 December 2011

Document identifier: PEMH1_PUMH1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14