TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL J-FET
Equivalent To MIL-PRF-19500/385
T4-LDS-0002 Rev. 2 (090603) Page 1 of 2
DEVICES LEVELS
2N4856 2N4858 2N4860 MQ = JAN Equivalent
2N4857 2N4859 2N4861 MX = JANTX Equivalent
MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N4856
2N4857
2N4858
2N4859
2N4860
2N4861 Unit
Gate-Source Voltage VGS -40 -30 V
Drain-Source Voltage VDS 40 30 V
Drain-Gate Voltage VDG 40 30 V
Gate Current IG 50 mA
Power Dissipation
TA = +25°C (1)
TC = +25°C (2) PT
0.36
1.8 W
W
Operating Junction & Storage Temperature Range Tj, Tstg -65 to + 200 °C
(1) Derate linearly 2.06 mW/°C for TA > +25°C.
(2) Derate linearly 10.3 mW/°C for TC > +25°C.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Gate-Source Breakdown Voltage
VDS = 0, IG = -1.0μA dc 2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
V(BR)GSS -40
-30 Vdc
Gate-Source “Off” Stat e Voltage
VDS = 15V dc
ID = 0.5ηA dc 2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
VGS(off) -4.0
-2.0
-0.8
-10
-6.0
-4.0
Vdc
Gate Reverse Current
VDS = 0, VGS = -20V dc
VDS = 0, VGS = -15V dc 2N4856, 2N4857, 2N4858
2N4859, 2N4860, 2N4861
IGSS -0.25
-0.25 ηA
Drain Current Cutoff
VGS = -10V dc, VDS = 15V dc
ID(off) 0.25 ηA
Drain Current Zero Gate Voltage
VGS = 0, VDS = 15V dc 2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
IDSS 50
20
8.0
175
100
80
mA
Drain-Source “On” State Voltage
VGS = 0, ID = 20mA dc
VGS = 0, ID = 10mA dc
VGS = 0, ID = 5.0mA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
VDS(on) 0.75
0.50
0.50
Vdc
Static Drain – Source “On” State Resistance
VGS = 0, ID = 1.0mA dc
2N4856, 2N4859
2N4857, 2N4860
2N4858, 2N4861
rds(on)
25
40
60
Ω
TO-18
(TO-206AA)