THYRISTOR MODULE
Maximum Ratings Approx Net Weight:155g
Grade
Parameter
ParameterParameter
Parameter
Symbol PDT/PDH10012 PDT/PDH10016
Unit
Repetitive Peak Off-State Voltage VDRM 1200 1600
Non Repetitive Peak Off-State Voltage VDSM 1300 1700 V
Repetitive Peak Reverse Voltage VRRM 1200 1600
Non Repetitive Peak Reverse Voltage VRSM 1300 1700 V
Parameter
Parameter Parameter
Parameter
Conditions
ConditionsConditions
Conditions
Max Rated
Max RatedMax Rated
Max Rated
Value
Value Value
Value
Unit
Average Rectified Output Current IO(AV) 50Hz Half Sine Wave condition
Tc=77°C 100 A
RMS On-State Current IT(RMS) 156 A
Surge On-State Current ITSM 50 Hz Half Sine Wave,1Pulse
Non-Repetitive 2000 A
I Squared t I2t 2msec to 10msec 20000 A2s
Critical Rate of Turned-On Current di/dt VD=2/3VDRM, ITM=2•IO, Tj=125°C
I
G=200mA, diG/dt=0.2A/µs 100 A/µs
Peak Gate Power PGM 5 W
Average Gate Power PG(AV) 1 W
Peak Gate Current IGM 2 A
Peak Gate Voltage VGM 10 V
Peak Gate Reverse Voltage VRGM 5 V
Operating JunctionTemperature Range Tjw -40 to +125 °C
Storage Temperature Range Tstg -40 to +125 °C
Isoration Voltage Viso Base Plate to Terminals, AC1min 2500 V
Case mounting M6 Screw 2.4 to 3.5
Mounting torque Terminals Ftor M5 Screw 2.4 to 2.8 N•m
Value per 1 Arm
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PDT10012 PDT1001
6
PDT10012 PDT1001
6
PDT10012 PDT1001
6
PDT10012 PDT1001
6
PDH10012 PDH1001
6
PDH10012 PDH1001
6
PDH10012 PDH1001
6
PDH10012 PDH1001
6
OUTLINE DRAWING
φ
100A / 1200 to 1600V
PDT
PD
H
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Electrical • Thermal Characteristics
Maximum Value.
Characteristics Symbol Test Conditions Min. Typ. Max. Unit
Peak Off-State Current IDM VDM= VDRM, Tj= 125°C 20 mA
Peak Reverse Current IRM VRM= VRRM, Tj= 125°C 20 mA
Peak Forward Voltage VTM ITM= 300A, Tj=25°C 1.38 V
Tj=-40°C 200
Tj=25°C 100
Gate Current to Trigger IGT V
D=6V,IT=1A
Tj=125°C 50
mA
Tj=-40°C 4
Tj=25°C 2.5
Gate Voltage to Trigger VGT V
D=6V,IT=1A
Tj=125°C 2
V
Gate Non-Trigger Voltage VGD VD=2/3VDRM Tj=125°C 0.25 V
Critical Rate of Rise of Off-State
Voltage dv/dt VD=2/3VDRM Tj=125°C 500 V/µs
Turn-Off Time tq
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
100 µs
Turn-On Time tgt 6 µs
Delay Time td 2 µs
Rise Time tr
VD=2/3VDRM Tj=125°C
IG=200mA, diG/dt=0.2A/µs 4
µs
Latching Current IL Tj=25°C 100 mA
Holding Current IH Tj=25°C 50
Rth(j-c) Junction to Case 0.35
Thermal Resistance Rth(c-f) Base Plate to Heat Sink
with Thermal Compound 0.2
°C/W
Value Per 1Arm
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PDT/PDH1001x OUTLINE DRAWING (Dimensions in mm)
φ
PDT
PDH
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