© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 13 1Publication Order Number:
MJD2955/D
MJD2955(PNP),
MJD3055(NPN)
Complementary Power
Transistors
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
•Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
•Straight Lead Version in Plastic Sleeves (“−1” Suffix)
•Electrically Similar to MJE2955 and MJE3055
•High Current Gain−Bandwidth Product
•Epoxy Meets UL 94 V−0 @ 0.125 in
•NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 60 Vdc
Collector−Base Voltage VCB 70 Vdc
Emitter−Base Voltage VEB 5 Vdc
Collector Current IC10 Adc
Base Current IB6 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD{
20
0.16 W
W/°C
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD1.75
0.014 W
W/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must
be observed.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
SILICON
POWER TRANSISTORS
10 AMPERES
60 VOLTS, 20 WATTS
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
AYWW
J
xx55G
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AYWW
J
xx55G
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
Jxx55 = Device Code
x = 29 or 30
G = Pb−Free Package
DPAK IPAK
123
4
123
4
COMPLEMENTARY
1
BASE
3
EMITTER
COLLECTOR
2, 4
1
BASE
3
EMITTER
COLLECTOR
2, 4
MJD2955 (PNP), MJD3055 (NPN)
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 30 mAdc, IB = 0) VCEO(sus) 60 − Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) ICEO − 50 mAdc
Collector Cutoff Current
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX −
−0.02
2
mAdc
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 70 Vdc, IE = 0, TC = 150_C)
ICBO −
−0.02
2
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0) IEBO − 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 4 Adc, VCE = 4 Vdc)
(IC = 10 Adc, VCE = 4 Vdc)
hFE 20
5100
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)
VCE(sat) −
−1.1
8
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 4 Adc, VCE = 4 Vdc) VBE(on) − 1.8 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) fT2 − MHz
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
MJD2955 (PNP), MJD3055 (NPN)
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3
V, VOLTAGE (VOLTS)
t, TIME (s)μ
5
3
2
1
0.5
0.3
0.7
0.2
500
300
200
100
30
20
50
IC, COLLECTOR CURRENT (AMP)
2
0.5
0.3
IC, COLLECTOR CURRENT (AMP)
0.2
Figure 1. Power Derating
Figure 2. DC Current Gain
0.01 0.02 0.05 1 10250.1
Figure 3. Turn−On Time
Figure 4. “On” Voltages, MJD3055
TJ = 25°C
tr
TJ = 150°C
-55°C
25°C
1
0.7
0.2
IC, COLLECTOR CURRENT (AMP)
0.2 1 60.6 20.06 0.4 4
IC, COLLECTOR CURRENT (AMP)
0.1 0.2 0.3 1 10250.5 3
Figure 5. Turn−Off Time
hFE, DC CURRENT GAIN
VCE = 2 V
10
50.5
25
25
T, TEMPERATURE (°C)
050 75 100 125 150
20
15
10
5
PD, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
TATC
TC
TA
SURFACE
MOUNT
ts
1.4
0.8
0.6
0
1.2
1
0.4
0.2
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
0.03
0.02
0.1
0.07
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 2 V
0.1
0.05
0.07
0.1
td @ VBE(off) ≈ 5 V
0.2 1 60.6 20.06 0.4 40.1
t, TIME (s)μ
tf
TYPICAL CHARACTERISTICS
MJD2955 (PNP), MJD3055 (NPN)
http://onsemi.com
4
Figure 6. “On” Voltages, MJD2955
2
0.1
0
0.2 0.3 0.5 1 3 10
0.8
1.6
1.2
V, VOLTAGE (VOLTS)
0.4
5
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 3 V
Figure 7. Switching Time Test Circuit
Figure 8. Thermal Response
t, TIME (ms)
1
0.01
0.02
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 500
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.1 0.50.2
RESISTANCE (NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.03 0.3 3 30 300
IC, COLLECTOR CURRENT (AMP)
2
+11 V
25 ms
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.01
Figure 9. Maximum Forward Bias
Safe Operating Area
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
5
2
1
10
0.5
0.1
TJ = 150°C
1ms
dc
3
0.3
0.6 1 2 6020 40
IC, COLLECTOR CURRENT (AMP)
WIRE BOND LIMIT
THERMAL LIMIT TC = 25°C (D = 0.1)
SECOND BREAKDOWN LIMIT
1064
500ms
0.03
0.05
100ms
5ms
Forward Bias Safe Operating Area Information
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 9 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD2955 (PNP), MJD3055 (NPN)
http://onsemi.com
5
ORDERING INFORMATION
Device Package Type Package Shipping†
MJD2955G DPAK
(Pb−Free) 369C 75 Units / Rail
MJD2955−1G IPAK
(Pb−Free) 369D 75 Units / Rail
MJD2955T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD2955T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
MJD3055G DPAK
(Pb−Free) 369C 75 Units / Rail
MJD3055T4G DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
NJVMJD3055T4G* DPAK
(Pb−Free) 369C 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
MJD2955 (PNP), MJD3055 (NPN)
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
b
D
E
b3
L3
L4 b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DET AIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
MJD2955 (PNP), MJD3055 (NPN)
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7
PACKAGE DIMENSIONS
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
IPAK
CASE 369D
ISSUE C
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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MJD2955/D
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