UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49052. www.onsemi.com C G Features * * * * * * E 70 A, 600 V, TC = 25C 600 V Switching SOA Capability Typical Fall Time: 100 ns at TJ = 150C Short Circuit Rating Low Conduction Loss This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant TO-247-3LD CASE 340CK Packing MARKING DIAGRAMS $Y&Z&3&K G40N60B3 Figure 1. $Y &Z &3 &K G40N60B3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION (c) Semiconductor Components Industries, LLC, 2004 April, 2020 - Rev. 4 1 Part Number Package Brand HGTG40N60B3 TO-24 G40N60B3 Publication Order Number: HGTG40N60B3/D HGTG40N60B3 ABSOLUTE MAXIMUM RATINGS TC = 25C Unless Otherwise Specified Symbol Ratings Units BVCES 600 V IC25 IC110 70 40 A ICM 330 A Gate to Emitter Voltage Continuous VGES 20 V Gate to Emitter Voltage Pulsed VGEM 30 V Switching Safe Operating Area at TJ = 150C, Figure 3 SSOA 100 A at 600 V PD 290 2.33 W W/C EARV 100 mJ TJ, TSTG -55 to 150 C TL 260 C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 2 ms Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms Description Collector to Emitter Voltage Collector Current Continuous At TC = 25C At TC = 110C Collector Current Pulsed (Note 1) Power Dissipation Total at TC = 25C Power Dissipation Derating TC > 25C Reverse Voltage Avalanche Energy Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ = 125C, RG = 3 W. www.onsemi.com 2 HGTG40N60B3 ELECTRICAL SPECIFICATIONS TC = 25C Unless Otherwise Specified SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS BVCES Collector to Emitter Breakdown Voltage IC = 250 mA, VGE = 0 V 600 - - V BVECS Emitter to Collector Breakdown Voltage IC = -10 mA, VGE = 0 V 20 - - V Collector to Emitter Leakage Current VCE = BVCES TC = 25C - - 100 A VCE = BVCES TC = 150C - - 6.0 mA - 1.4 2.0 V - 1.5 2.3 V 3.0 4.8 6.0 V ICES VCE(SAT) Collector to Emitter Saturation Voltage IC = IC110, VGE = 15 V TC = 25C TC = 150C VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I Gate to Emitter Threshold Voltage IC = 250 mA, VCE = VGE Gate to Emitter Leakage Current VGE = 20 V Switching SOA TJ = 150C RG = 3 VGE = 15 V L = 100 mH 100 nA - - A VCE = 600 V 100 - - A IC = IC110, VCE = 0.5 BVCES - 7.5 - V On-State Gate Charge IC = IC110, VCE = 0.5 BVCES VGE = 15 V - 250 330 nC VGE = 20 V - 335 435 nC IGBT and Diode Both at TJ = 25C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 W L = 100 mH Test Circuit (Figure 18) - 47 - ns - 35 - ns - 170 200 ns - 50 100 ns - 1050 1200 mJ - 800 1400 mJ IGBT and Diode Both at TJ = 150C ICE = IC110 VCE = 0.8 BVCES VGE = 15 V RG = 3 W L = 100 mH Test Circuit (Figure 17) - 47 - ns - 35 - ns - 285 375 ns - 100 175 ns - 1850 - mJ Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time EON Turn-On Energy EOFF Turn-Off Energy (Note 3) td(ON)I Current Turn-On Delay Time td(OFF)I - 200 Gate to Emitter Plateau Voltage tfI trI - VCE = 480 V Current Rise Time Current Turn-Off Delay Time tfI Current Fall Time EON Turn-On Energy EOFF Turn-Off Energy (Note 3) - 2000 - mJ RJC Thermal Resistance Junction To Case - - 0.43 C/W 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due to diode recovery. www.onsemi.com 3 HGTG40N60B3 TYPICAL PERFORMANCE CURVES (continued) TJ = 1505C, RG = 3 , VGE = 15 V 200 150 60 PACKAGE LIMITED 100 20 50 75 100 125 150 50 0 0 100 400 500 700 600 Figure 2. DC COLLECTOR CURRENT vs CASE TEMPERATURE Figure 3. MINIMUM SWITCHING SAFE OPERATING AREA VGE TC 100 75 o C 15 V 75 oC 10 V 110 oC 15 V 110 oC 10 V 10 f MAX1 = 0.05 / (td(OFF)I + td(ON)I ) f MAX2 = (PD - PC) / (E ON + E OFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RqJC = 0.435C/W, SEE NOTES 10 20 40 60 80 18 100 900 VCE = 360 V, RG = 3 , TJ = 1255C 16 800 ISC 14 600 10 500 tSC 8 300 4 10 11 ICE, COLLECTOR TO EMITTER CURRENT (A) DUTY CYCLE <0.5%, VGE PULSE DURATION = 250 ms 150 TC = 1505C 50 3 TC = -555C TC = 1505C 100 TC = 255C 2 200 15 14 Figure 5. SHORT CIRCUIT WITHSTAND TIME 100 1 13 200 TC = -555C 0 12 VGE , GATE TO EMITTER VOLTAGE (V) DUTY CYCLE <0.5%, VGE = 10 V PULSE DURATION = 250 ms 150 400 6 Figure 4. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 200 700 12 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 300 VCE, COLLECTOR TO EMITTER VOLTAGE (V) TJ = 1505C, RG = 3 , L = 100 H, VCE = 480 V 0 200 TC , CASE TEMPERATURE (oC) ISC , PEAK SHORT CIRCUIT CURRENT (A) 40 1 ICE, COLLECTOR TO EMITTER CURRENT (A) 80 0 25 fMAX, OPERATING FREQUENCY (kHz) 250 VGE = 15 V tSC , SHORT CIRCUIT WITHSTAND TIME (s) ICE , DC COLLECTOR CURRENT (A) 100 4 5 TC = 255C 50 0 0 1 2 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V) Figure 6. COLLECTOR TO EMITTER ON STATE VOLTAGE Figure 7. COLLECTOR TO EMITTER ON STATE VOLTAGE www.onsemi.com 4 4 HGTG40N60B3 TYPICAL PERFORMANCE CURVES (continued) 8 RG = 3 , L = 100 mH, VCE = 480 V 16 EOFF , TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) 20 TJ = 255C, VGE = 10 V TJ = 1505C, VGE = 10 V 12 TJ = 1505C, VGE = 15 V 8 4 0 TJ = 255C, VGE = 15 V 20 40 60 6 TJ = 1505C; VGE = 10 V AND 15 V 4 2 TJ = 255C; VGE = 10 V AND 15 V 0 100 80 RG = 3 W, L = 100 mH, VCE = 480 V 20 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 1505C, VGE = 10 V 60 TJ = 255C, VGE = 15 V TJ = 1505C, VGE = 15 V 40 30 20 60 40 TJ = 255C, VGE = 10 V 400 TJ = 1505C, VGE = 10 V 300 200 TJ = 255C AND 1505C, VGE = 10V AND 15V 100 80 0 100 20 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 80 100 Figure 11. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 180 RG = 3 , L = 100 mH, VCE = 480 V RG = 3 , L = 100 mH, VCE = 480 V TJ = 1505C, VGE = 15 V 250 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 40 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 10. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 300 100 RG = 3 , L = 100 mH, VCE = 480 V 500 TJ = 255C, VGE = 10 V trI ,RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 600 80 50 80 Figure 9. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT RG = 3 , L = 100 mH, VCE = 480 V 70 60 ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 8. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 90 40 TJ = 1505C, VGE = 10 V 200 TJ = 255C, VGE = 15 V 150 140 TJ = 1505C, VGE = 10 V AND 15 V 100 60 TJ = 255C, VGE = 10 V AND 15 V 100 TJ = 255C, VGE = 10 V 20 40 60 80 20 100 20 40 60 80 100 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Figure 12. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT Figure 13. FALL TIME vs COLLECTOR TO EMITTER CURRENT www.onsemi.com 5 HGTG40N60B3 200 VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) TYPICAL PERFORMANCE CURVES (continued) DUTY CYCLE = <0.5%, VCE = 10 V PULSE DURATION = 25 ms 160 120 80 TC = 255C 40 0 TC = 1505C TC = -555C 15 12 5 7 8 9 10 VCE = 400V VCE = 600V 9 6 VCE = 200V 3 0 46 Ig(REF) = 3.255 mA, RL = 7.5 W, TC = 255C 0 100 50 VGE, GATE TO EMITTER VOLTAGE (V) Figure 14. TRANSFER CHARACTERISTIC 250 200 300 Figure 15. GATE CHARGE WAVEFORM 14 FREQUENCY = 400kHz 12 C, CAPACITANCE (nF) 150 QG, GATE CHARGE (nC) CIES 10 8 6 4 COES 2 0 CRES 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Z JC , NORMALIZED THERMAL IMPEDANCE Figure 16. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 10-1 0.1 0.05 t1 0.02 PD DUTY FACTOR, D = t1 / t2 0.01 10-2 10-5 10-4 t2 PEAK TJ = (PD y ZqJC y RqJC) + TC SINGLE PULSE 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) Figure 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE www.onsemi.com 6 101 HGTG40N60B3 Test Circuit and Waveform L = 100 mH 90% RHRP3060 10% VGE EON EOFF RG = 3 W VCE + - 90% VDD = 480V 10% ICE Figure 18. INDUCTIVE SWITCHING TEST CIRCUIT td(OFF)I tfI trI td(ON)I Figure 19. SWITCHING TEST WAVEFORM www.onsemi.com 7 HGTG40N60B3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBD LD26" or equivalent 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband 3. Tips of soldering irons should be grounded 4. Devices should never be inserted into or removed from circuits with power on 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended Operating frequency information for a typical device (Figure 4) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6 to 11. The operating frequency plot (Figure 4) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 4) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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