© Semiconductor Components Industries, LLC, 2004
April, 2020 − Rev. 4
1Publication Order Number:
HGTG40N60B3/D
UFS Series N-Channel IGBT
70 A, 600 V
HGTG40N60B3
The HGTG40N60B3 is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on−state conduction loss of a bipolar transistor. The much lower
on−state voltage drop varies only moderately between 25°C and
150°C.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49052.
Features
•70 A, 600 V, TC = 25°C
•600 V Switching SOA Capability
•Typical Fall Time: 100 ns at TJ = 150°C
•Short Circuit Rating
•Low Conduction Loss
•This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Packing
Figure 1.
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MARKING DIAGRAMS
TO−247−3LD
CASE 340CK
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
G40N60B3 = Specific Device Code
Part Number Package Brand
ORDERING INFORMATION
HGTG40N60B3 TO−24 G40N60B3
$Y&Z&3&K
G40N60B3
C
E
G
HGTG40N60B3
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2
ABSOLUTE MAXIMUM RATINGS TC = 25°C Unless Otherwise Specified
Description Symbol Ratings Units
Collector to Emitter Voltage BVCES 600 V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
70
40
A
Collector Current Pulsed (Note 1) ICM 330 A
Gate to Emitter Voltage Continuous VGES ±20 V
Gate to Emitter Voltage Pulsed VGEM ±30 V
Switching Safe Operating Area at TJ = 150°C, Figure 3 SSOA 100 A at 600 V
Power Dissipation Total at TC = 25°C
Power Dissipation Derating TC > 25°C
PD290
2.33
W
W/°C
Reverse Voltage Avalanche Energy EARV 100 mJ
Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C
Maximum Lead Temperature for Soldering TL260 °C
Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 2ms
Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 10 ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360 V, TJ = 125°C, RG = 3 W.
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ELECTRICAL SPECIFICATIONS TC = 25°C Unless Otherwise Specified
SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
BVCES Collector to Emitter Breakdown Voltage IC = 250 mA, VGE = 0 V 600 − − V
BVECS Emitter to Collector Breakdown Voltage IC = −10 mA, VGE = 0 V 20 − − V
ICES Collector to Emitter Leakage Current VCE = BVCES TC = 25°C− − 100 μA
VCE = BVCES TC = 150°C− − 6.0 mA
VCE(SAT) Collector to Emitter Saturation Voltage IC = IC110, VGE = 15 V TC = 25°C−1.4 2.0 V
TC = 150°C−1.5 2.3 V
VGE(TH) Gate to Emitter Threshold Voltage IC = 250 mA, VCE = VGE 3.0 4.8 6.0 V
IGES Gate to Emitter Leakage Current VGE = ±20 V − − ±100 nA
SSOA Switching SOA TJ = 150°C
RG = 3 Ω
VGE = 15 V
L = 100 mH
VCE = 480 V 200 − − A
VCE = 600 V 100 − − A
VGEP Gate to Emitter Plateau Voltage IC = IC110, VCE = 0.5 BVCES −7.5 −V
QG(ON) On−State Gate Charge IC = IC110,
VCE = 0.5 BVCES
VGE = 15 V −250 330 nC
VGE = 20 V −335 435 nC
td(ON)I Current Turn−On Delay Time IGBT and Diode Both at TJ = 25°C
ICE = IC110
VCE = 0.8 BVCES
VGE = 15 V
RG = 3 W
L = 100 mH
Test Circuit (Figure 18)
−47 −ns
trI Current Rise Time −35 −ns
td(OFF)I Current Turn−Off Delay Time −170 200 ns
tfI Current Fall Time −50 100 ns
EON Turn−On Energy −1050 1200 mJ
EOFF Turn−Off Energy (Note 3) −800 1400 mJ
td(ON)I Current Turn−On Delay Time IGBT and Diode Both at TJ = 150°C
ICE = IC110
VCE = 0.8 BVCES
VGE = 15 V
RG = 3 W
L = 100 mH
Test Circuit (Figure 17)
−47 −ns
trI Current Rise Time −35 −ns
td(OFF)I Current Turn−Off Delay Time −285 375 ns
tfI Current Fall Time −100 175 ns
EON Turn−On Energy −1850 −mJ
EOFF Turn−Off Energy (Note 3) −2000 −mJ
RθJC Thermal Resistance Junction To Case − − 0.43 °C/W
3. Turn−Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss. Turn−On losses
include losses due to diode recovery.
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TYPICAL PERFORMANCE CURVES (continued)
Figure 2. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
Figure 3. MINIMUM SWITCHING SAFE
OPERATING AREA
Figure 4. OPERATING FREQUENCY vs
COLLECTOR TO EMITTER CURRENT
Figure 5. SHORT CIRCUIT WITHSTAND TIME
Figure 6. COLLECTOR TO EMITTER ON STATE
VOLTAGE
Figure 7. COLLECTOR TO EMITTER ON STATE
VOLTAGE
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
25 50 75 100 125 150
20
0
40
60
80
100
PACKAGE LIMITED
VGE = 15 V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
250
700
150
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
100
300 400
200
100 500 600
200
0
fMAX, OPERATING FREQUENCY (kHz)
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20 40 60 100
1
100 TCVGE
110oC10 V
110o15 V
10 V
75oC
15 V
75oC
fMAX1
= 0.05 / (td(OFF)I + td(ON)I)
fMAX2
= (PD− PC) / (EON
+ EOFF)
80
VGE , GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (
s)
10 11 12 13 14 15
4
6
8
10
14
16
12
18
200
300
400
500
600
700
800
900
tSC
ISC
PULSE DURATION = 250 ms
DUTY CYCLE <0.5%, V
GE = 10 V
012345
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
200
DUTY CYCLE <0.5%, V
GE
01234
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
50
100
150
200
TJ = 1505C, RG = 3 Ω, VGE = 15 V
C
TJ = 1505C, RG = 3 Ω, L = 100 μH, VCE = 480 V VCE = 360 V, RG = 3 Ω, TJ = 1255C
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RqJC = 0.435C/W, SEE NOTES
TC = −555CTC = 1505C
TC = 255C
TC = −555C
TC = 1505C
TC = 255C
PULSE DURATION = 250 ms
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TYPICAL PERFORMANCE CURVES (continued)
Figure 8. TURN−ON ENERGY LOSS vs COLLECTOR
TO EMITTER CURRENT
Figure 9. TURN−OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
Figure 10. TURN−ON DELAY TIME vs COLLECTOR
TO EMITTER CURRENT
Figure 11. TURN−ON RISE TIME vs COLLECTOR
TO EMITTER CURRENT
Figure 12. TURN−OFF DELAY TIME vs
COLLECTOR TO EMITTER CURRENT
Figure 13. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
EON, TURN−ON ENERGY LOSS (mJ)
20
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
100
16
8
4
0
806040
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN−OFF ENERGY LOSS (mJ)
100
2
4
6
8
0806040
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN−ON DELAY TIME (ns)
30
40
20 60 80 100
40
50
60
70
80
90
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI,RISE TIME (ns)
20
100
300
200
400
500
0
600
40 60 80 100
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
td(OFF)I , TURN−OFF DELAY TIME (ns)
40 60 80 100
100
150
200
250
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
20 40 60 80 100
20
60
100
140
180
RG = 3 Ω, L = 100 mH, VCE = 480 V RG = 3 W, L = 100 mH, VCE = 480 V
TJ = 1505C, VGE = 10 V
TJ = 255C, VGE = 10 V
TJ = 1505C, VGE = 15 V
TJ = 255C, VGE = 15 V
TJ = 1505C; VGE = 10 V AND 15 V
TJ = 255C; VGE = 10 V AND 15 V
RG = 3 Ω, L = 100 mH, VCE = 480 V RG = 3 Ω, L = 100 mH, VCE = 480 V
TJ = 255C, VGE = 10 V
TJ = 1505C, VGE = 10 V
TJ = 255C, VGE = 15 V
TJ = 1505C, VGE = 15 V
TJ = 255C, VGE = 10 V
TJ = 1505C, VGE = 10 V
TJ = 255C AND 1505C,
VGE = 10V AND 15V
RG = 3 Ω, L = 100 mH, VCE = 480 V
TJ = 1505C, VGE = 15 V
TJ = 1505C, VGE = 10 V
TJ = 255C, VGE = 15 V
TJ = 255C, VGE = 10 V
RG = 3 Ω, L = 100 mH, VCE = 480 V
TJ = 1505C, VGE = 10 V AND 15 V
TJ = 255C, VGE = 10 V AND 15 V
HGTG40N60B3
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6
TYPICAL PERFORMANCE CURVES (continued)
Figure 14. TRANSFER CHARACTERISTIC Figure 15. GATE CHARGE WAVEFORM
Figure 16. CAPACITANCE vs COLLECTOR TO
EMITTER VOLTAGE
Figure 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
40
80
120
160
200
5 7891046
VGE, GATE TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)
200
0
12
15
9
6
3
0 100
50 150 250 300
VCE = 600V
VCE = 200V
VCE = 400V
VGE, GATE TO EMITTER VOLTAGE (V)
CRES
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
2
C, CAPACITANCE (nF)
CIES
COES
FREQUENCY = 400kHz
4
6
8
10
12
14
10−510−310−210−1100101
10−4
t1, RECTANGULAR PULSE DURATION (s)
10−1
ZJC, NORMALIZED THERMAL IMPEDANCE
0.5
SINGLE PULSE
0.01
0.1
0.05
0.02
t2
PD
t1
DUTY FACTOR, D = t
1 / t2
100
10−2
0.2
DUTY CYCLE = <0.5%, VCE = 10 V
PULSE DURATION = 25 ms
TC = 255C
TC = 1505CTC = −555C
Ig(REF) = 3.255 mA, RL = 7.5 W, TC = 255C
PEAK TJ = (PD y ZqJC y RqJC) + TC
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8
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBD LD26” or
equivalent
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband
3. Tips of soldering irons should be grounded
4. Devices should never be inserted into or removed
from circuits with power on
5. Gate Voltage Rating − Never exceed the
gate−voltage rating of VGEM. Exceeding the rated
VGE can result in permanent damage to the oxide
layer in the gate region
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended
Operating Frequency Information
Operating frequency information for a typical device
(Figure 4) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6 to 11.
The operating frequency plot (Figure 4) of a typical device
shows fMAX1 or fMAX2; whichever is smaller at each point.
The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. td(OFF)I and td(ON)I are defined in
Figure 19. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
TJM. td(OFF)I is important when controlling output ripple
under a lightly loaded condition.
fMAX2 is defined by fMAX2 = (PD − PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM −
TC)/RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 4) and the conduction losses (PC) are approximated
by PC = (VCE × ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE × V
CE) during turn−on and EOFF is the
integral of the instantaneous power loss (ICE × VCE) during
turn−off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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