MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD-123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Features Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL 94 V-0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: Human Body Model = 3 Machine Model = C AEC-Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb-Free* Mechanical Characteristics Device Marking: S3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds SOD-123 CASE 425 STYLE 1 MARKING DIAGRAM 1 S3 M G S3 MG G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MBR130T1G SOD-123 (Pb-Free) 3,000 / Tape & Reel ** NRVB130T1G SOD-123 (Pb-Free) 3,000 / Tape & Reel ** MBR130T3G SOD-123 (Pb-Free) 10,000 / Tape & Reel *** Device ** 8 mm Tape, 7" Reel *** 8 mm Tape, 13" Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 January, 2012 - Rev. 4 1 Publication Order Number: MBR130T1/D MBR130T1G, NRVB130T1G, MBR130T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TL = 65C IF(AV) Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg -65 to +125 C Operating Junction Temperature TJ -65 to +125 C dv/dt 1000 V/ms Voltage Rate of Change (Rated VR) 1.0 5.5 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (Note 1) RJA 230 C/W Thermal Resistance, Junction to Lead (Note 1) RJL 108 C/W Typ Max Unit - - 0.47 0.35 0.45 - 1. FR-4 or FR-5 = 3.5 1.5 inches using a 1 inch Cu pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (IF = 0.1 A, TJ = 25C) (IF = 0.7 A, TJ = 25C) (IF = 1.0 A, TJ = 25C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (VR = 5 V, TC = 25C) IR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. http://onsemi.com 2 60 10 V mA MBR130T1G, NRVB130T1G, MBR130T3G 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1 TJ = 125C 75C 0.1 0.2 0.25 0.3 0.35 25C 0.4 0.45 0.5 0.55 0.6 1 TJ = 125C 75C 0.1 0.65 0.2 0.25 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.4 0.45 0.5 0.55 0.6 0.65 Figure 2. Typical Forward Voltage 0.01 200 TJ = 125C 180 0.001 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.35 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage 75C 0.0001 0.00001 25C 0.000001 160 140 120 100 80 60 40 20 0.0000001 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 0 0 Figure 3. Typical Reverse Current 1.8 1.6 dc 1.4 1.2 RATED VOLTAGE APPLIED SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 TL, LEAD TEMPERATURE (C) 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 Figure 4. Typical Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0.3 25C 120 0.9 0.8 0.7 SQUARE WAVE 0.6 0.5 dc 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Figure 5. Current Derating, Lead, RqJL = 1085C/W http://onsemi.com 3 MBR130T1G, NRVB130T1G, MBR130T3G PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE G D AAAA AAAA A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L q E 2 q MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0 INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 STYLE 1: PIN 1. CATHODE 2. ANODE L b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 0 C SOLDERING FOOTPRINT* EE EE EE 0.91 0.036 2.36 0.093 4.19 0.165 EE EE EE SCALE 10:1 1.22 0.048 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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