Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1Publication Order Number:
MBR130T1/D
MBR130T1G, NRVB130T1G,
MBR130T3G
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style.
Features
Guardring for Stress Protection
Low Forward Voltage
125C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
Human Body Model = 3
Machine Model = C
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Device Marking: S3
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
http://onsemi.com
SOD−123
CASE 425
STYLE 1
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
30 VOLTS
MARKING DIAGRAM
S3 MG
G
1
S3 = Specific Device Code
M = Date Code
G= Pb−Free Package
MBR130T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
MBR130T3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NRVB130T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
MBR130T1G, NRVB130T1G, MBR130T3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 V
Average Rectified Forward Current
(Rated VR) TL = 65C
IF(AV) 1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM 5.5
A
Storage Temperature Range Tstg −65 to +125 C
Operating Junction Temperature TJ−65 to +125 C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Ambient (Note 1) RJA 230 C/W
Thermal Resistance, Junction to Lead (Note 1) RJL 108 C/W
1. FR−4 or FR−5 = 3.5 1.5 inches using a 1 inch Cu pad.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 2)
(IF = 0.1 A, TJ = 25C)
(IF = 0.7 A, TJ = 25C)
(IF = 1.0 A, TJ = 25C)
VF
−
−
0.47
0.35
0.45
−
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25C)
(VR = 5 V, TC = 25C)
IR60
10
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
MBR130T1G, NRVB130T1G, MBR130T3G
http://onsemi.com
3
10
1
0.1
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
Figure 2. Typical Forward Voltage
TJ = 125C
75C 25C
0.55 0.65
10
1
0.1
VF
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.6
TJ = 125C
75C 25C
0.55 0.65
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF
, INSTANTANEOUS FORWARD
CURRENT (AMPS)
Figure 3. Typical Reverse Current
VR, REVERSE VOLTAGE (VOLTS)
0.01
0.001
0.0001
0.00001
302520151050
Figure 4. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
35302520151050
180
160
140
120
100
80
60
40
20
0
200
Figure 5. Current Derating, Lead, RqJL = 1085C/W
TL, LEAD TEMPERATURE (C)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
120100806040200
Figure 6. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
1.81.41.210.80.60.40.20
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
0
0.8
0.9
IR, REVERSE CURRENT (AMPS)
0.000001
0.0000001
C, CAPACITANCE (pF)
TJ = 125C
75C
25C
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
SQUARE
WAVE
RATED
VOLTAGE
APPLIED
dc
PF(AV), AVERAGE FORWARD POWER
DISSIPATION (WATTS)
1.6
SQUARE
WAVE
dc
MBR130T1G, NRVB130T1G, MBR130T3G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MBR130T1/D
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