SIEMENS BCR 196 PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=47kQ, Ro=22kQ) maerres PS05161 Type Marking |Ordering Code | Pin Configuration Package BCR 196 wxs [UPONINQUIRY [1=B [2=E [3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEo 50 v Collector-base voltage VoBo 50 Emitter-base voltage Vespo 10 Input on Voltage Vicon) 50 DC collector current Io 70 mA Total power dissipation, Ts = 102C Prot 200 mw Junction temperature 7 150 C Storage temperature Tetg - 65...+ 150 Thermal Resistance Junction ambient =? Rina <= 350 KAW Junction - soldering point Anas $240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / Bem? Cu Semiconductor Group 735 11.96SIEMENS BCR 196 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Vipryceo Vv Ic = 100 pA, Ip = 0 50 - - Collector-base breakdown voltage ViprycBo Io = 10 BA, fg = 0 50 - - Collector cutoff current IcBo nA Voep = 40 V, fe =0 - - 100 Emitter cutoff current lEBO pA Vep = 10 V, lo =0 - - 220 DC current gain hee - Io =5 MA, Vog =5V 50 - - Collector-emitter saturation voltage 1) VoEsat Vv Ig = 10 MA, Ig =0.5 MA - - 0.3 Input off voltage Vicotty Ig = 100 pA, Vog =5V 1.2 - 2.6 Input on Voltage Vion) Ig =2 MA, Vog = 0.3 V 1.5 - 4 Input resistor Ry 32 47 62 kQ Resistor ratio Ri/Re 1.92 2.14 2.36 - AC Characteristics Transition frequency fr MHz lg = 10 MA, Vog = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 3001s; D < 2% Semiconductor Group 736 11.96SIEMENS BCR 196 DC Current Gain here = f (Ic) Collector-Emitter Saturation Voltage Voce = 5V (common emitter configuration) Voesat = Alc), hee = 20 105 102 Mee I 10 101 10! 10 10 10 10 mA 00 02 04 06 v 4.0 > Mess 10 Input on Voltage Vion) = Alc) input off voltage Viotn = A/c) Veg = 0.3V (common emitter configuration) Vce = 5V (common emitter configuration) Vigor Semiconductor Group 737 11.96SIEMENS BCR 196 Total power dissipation P,, = * Package mounted on epoxy f(Ta*;Ts) mw i iN \ ca \\ s \ OBO ae go BD 100 120 *S "180 Permissible Pulse Load Ainjs = Ato) 103 HM D0 a 1 oe ILA elit 101 10 it on Con cil CO TT Tt 104 Tn ATO TTT 10 10 3 40 Semiconductor Group Permissible Pulse Load Piotmax / Ptotoc = Ab) \ ais Sl mi HE itil iH Se we {INEM Cm 10 107 5 10 738 11.96