Automotive
Datasheet
Rev. 1.1, 2011-04-30
BTS3800SL
Small Protected Automotive Relay Driver
Single Channel, 800mΩ
HITFET
Smart Low Side Power Switch
Datasheet 2 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Pin Assignment BTS3800SL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Input Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6.1 Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6.2 Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6.3 Power Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
7 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.2 Over Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.3 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7.4 Protection Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8 Package Outlines BTS3800SL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PG-SCT595
Type Package Marking
BTS3800SL PG-SCT595 38
Datasheet 3 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
BTS3800SL
1Overview
Features
• Short circuit and over load protection
• Thermal shutdown with latch behavior
• ESD protection
• Over voltage protection
• Logic level input suitable for 5V and 3.3V
• Small footprint automotive power package
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTS3800SL is a single channel Low Side power switch with embedded protective functions in PG-SCT595
package. The device is monolithically integrated with a N channel power MOSFET and additional protection
functions.
The BTS3800SL is especially designed as a protected relay driver in automotive and industrial applications.
Table 1 Product Summary
Drain voltage1)
1) Active clamped
VDS 41 V
Maximum Input Voltage VIN 5.5 V
Maximum On resistance at 150°C and 5V input voltage RDS(ON) 1.6 Ω
Typical On-State resistance at 25°C and 5V input voltage RDS(ON) 0.8 Ω
Nominal load current ID(nom) 350 mA
Minimum Current threshold level ID(OVL) 0.75 A
Single Clamping Energy EAS 65 mJ
Datasheet 4 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Overview
Protective Functions
• Electrostatic discharge protection (ESD)
• Active clamping over voltage protection
• Thermal shutdown with latching behavior
• Short circuit protection
• Current threshold switch off
Applications
• Designed for driving relays in automotive and industrial applications
• Protected power switch for small loads
• Protected line driver
• Protected supply switch
• Replacement of discrete circuits
Detailed Description
The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum
current capabilities.
The BTS3800SL offers ESD protection on the IN Pin refering to the Source Pin (Ground).
The overtemperature protection prevents the device from overheating due to overload and/or bad cooling
conditions. The temperature information is given by a temperature sensor which is placed monolitically in the
power stage.
The BTS3800SL has a thermal latch function. The device will turn off and stay off, even after the measured
temperature has dropped below the thermal hysteresis. After cooling down the device can be switched on again
by toggling the IN pin.
The over voltage protection is active during load dump or inductive turn off conditions.
In this conditions the power stage is limiting the Drain to Source voltage at VDS(AZ) and dissipating energy.
HITFET - BTS3800SL
Smart low side power switch
Block Diagram
Datasheet 5 Rev. 1.1, 2011-04-30
2 Block Diagram
Figure 1 Block Diagram of BTS3800SL
2.1 Terms
Figure 2 shows all external terms used in this data sheet.
Figure 2 Naming of electrical parameters
Drain
Source
IN
Over-
voltage
Protection
Gate
Driving
Unit
ESD
Protection
Over-
temperature
Protection
Short
circuit
detection
Blockdiagram_3800.emf
V
bb
GND
Terms_3800.emf
IN
V
bb
V
IN
I
IN
R
IN
Source
I
So u r c e
Z
L
I
D
V
D
Drain
Datasheet 6 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment BTS3800SL
Figure 3 Pin Configuration PG-SCT595
3.2 Pin Definitions and Functions
Pin Symbol Function
1Drain Drain pin; Load connection for power DMOS
2,5 n.c. not connected; Should be connected to ground for cooling
3IN Input pin; Digital input
4 Source Source pin; Ground, Source of power DMOS
123
45
P i n C onf i g .emf
HITFET - BTS3800SL
Smart low side power switch
General Product Characteristics
Datasheet 7 Rev. 1.1, 2011-04-30
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not designed for continuous repetitive operation.
Absolute Maximum Ratings1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design.
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Max.
Voltages
4.1.1 Drain voltage VDS –41V
2)
2) Active clamped.
4.1.2 Drain voltage for short circuit protection VDS(SC) –36V
4.1.3 Input Voltage VIN -0.3 5.5 V –
4.1.4 Input Current IIN self limited -0.3 V < VIN < 5.5 V
-4 4 mA 5.5 V < VIN < 8.0 V
4.1.5 Maximum Drain Current ID–0.75A
3)
3) Current protection threshold see “Over Load Protection” on Page 13 for details.
Energies
4.1.6 Unclamped single pulse inductive energy EAS –65mJID = 350mA;
TJ(start) = 150 °C
4.1.7 Unclamped repetitive pulse inductive
energy 1×104 cycles
EAR –14mJID = 350mA;
Vbb = 18 V;
TJ(start) = 85 °C
4.1.8 Unclamped repetitive pulse inductive
energy 1×106 cycles
–12mJ
ID = 350mA;
Vbb = 18V;
TJ(start) = 85°C
Temperatures
4.1.9 Operating temperature TJ-40 +150 °C–
4.1.10 Storage temperature TSTG -55 +150 °C–
ESD Susceptibility
4.1.11 ESD Resistivity VESD kV HBM4)
4) ESD susceptibility, HBM according to EIA/JESD 22-A114.
All pins -4 4
Drain vs. Source -8 8
Datasheet 8 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
General Product Characteristics
4.2 Functional Range
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3 Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards.
For more information, go to www.jedec.org.
.
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
4.2.1 Input pin voltage (device ON) VIN 2.7 5.5 V –
4.2.1 Drain voltage VD– 41 V active clamped
4.2.2 Input pin current consumption IIN(ON) –0.5mA
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
4.3.3 Junction to Pin 5 RthJpin ––27K/W
1) 2)
1) Not subject to production test, specified by design
2) Specified RthJpin value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature).
Ta = 25 °C. Device is loaded with 0.5 W power.
4.3.4 Junction to Ambient (2s2p) RthJA – 110 – K/W 1) 3)
3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu).
Ta = 25 °C, Device is loaded with 0.5 W power.
HITFET - BTS3800SL
Smart low side power switch
Input Stage
Datasheet 9 Rev. 1.1, 2011-04-30
5 Input Stage
The following chapter describes the behavior and characteristic of the input pin.
5.1 Input Circuit
Figure 4 shows the input circuit of the BTS3800SL. The Zener diode protects the input circuit against ESD pulses.
The internal circuitry is powered via the input pin. During normal operation the input is connected to the gate of
the power MOSFET. The current handling capability of the driving circuit does not influence the device behavior
as long as the supply current IIN(nom) is supplied.
During PWM operation the recharging of the gate increases the current consumption to the level IIN(PWM).
Figure 4 Input Circuit
The current sink to ground ensures that the channel switches off in case of an open input pin.
The Zener diode protects the input circuit against ESD pulses.
5.2 Input Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Input Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Input
5.2.1 Supply current from Input Pin IIN(ON) – 0.25 0.5 mA VDS = 0 V;
VIN = 5.5 V
5.2.2 Supply current during PWM IIN(PWM) –0.30.6mA
1) VIN = 5.5 V with
20kHz PWM (50%DC)
1) Not subject to production test
5.2.3 Input ON threshold voltage VIN(th) –2.32.7VVDS = 13.5 V;
ID = 350 mA
Input .em f
Source - Ground
Z
D
IN
I
IN
Gate
I
IS
Logic
Datasheet 10 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Power stage
6 Power stage
6.1 Output On-state Resistance
The on-state resistance depends on the junction temperature TJ and on the applied input voltage.
The following Figures show the dependencies for the typical on-state resistance RDS(on).
Figure 5 BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5.5V
Figure 6 BTS3800 Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3V
0,50
1,00
1,50
2,00
-50 -25 0 25 50 75 100 125 150
R
DS(on)
[ Ω ]
T [ °C ]
typ.
rdson_5V_3800.emf
0,50
1,00
1,50
2,00
-50 -25 0 25 50 75 100 125 150
RDS(on) [ Ω ]
T [ °C ]
typ.
rdson_3V_3800.emf
HITFET - BTS3800SL
Smart low side power switch
Power stage
Datasheet 11 Rev. 1.1, 2011-04-30
6.2 Output Timing
A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on.
Figure 7 shows the timing definition.
Figure 7 Definition of Power Output Timing for Resistive Load
6.3 Power Characteristics
Note: Characteristics show the deviation of parameter at given input voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
All voltages with respect to Source Pin unless otherwise stated.
Electrical Characteristics: Power Stage
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
Power Stage
6.3.1 On-State Resistance RDS(on) – 0.8 – Ω1) TJ = 25 °C;
VIN = 5.5 V
ID = 350 mA
– 1.4 1.6 ΩTJ = 150 °C;
VIN = 5.5 V
ID = 350 mA
– 1.0 – Ω1) TJ = 25 °C;
VIN = 3 V
ID = 350 mA
– 1.7 2.0 Ω1) TJ = 150 °C;
VIN = 3 V
ID = 350 mA
6.3.2 Nominal load current ID(nom) 350 520 – mA 2)TJ < 150 °C;
TA = 105 °C;
VIN = 5 V;
VDS = 0.5 V
IN [V]
0
5.0
t
V
D
V
bb
Switching.emf
t
10 %
90 %
t
on
t
off
80 %
20 %
dt
on
dt
off
Datasheet 12 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Power stage
6.3.3 Zero input voltage drain leakage current IDSS –2.56μAVD = 36 V;VIN = 0 V;
––
0.2
0.5
2
μAVD = 13.5 V;VIN = 0 V;
TJ =25 °C1)
TJ =85 °C1)
TJ =150 °C
Switching Vbb = 13.5 V, RL = 38 Ω, VIN = 5.0 V
6.3.4 Turn-on time ton –35μssee Figure 7 for
definiton
6.3.5 Turn-off time toff –3 5μssee Figure 7 for
definiton
6.3.6 Slew rate on -dVds/dton –612 dVD=80to20%Vbb
see Figure 7
6.3.7 Slew rate off dVds/dtoff –1222 dVD = 20 to 80% Vbb
see Figure 7
Inverse Diode
6.3.8 Inverse Diode forward voltage VSD – -1.0 -1.5 V ID =350 mA
VIN = 0 V
1) Not subject to production test, guaranteed by design.
2) Not subject to production test, calculated by RthJA and RDS(on).
Electrical Characteristics: Power Stage (cont’d)
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
HITFET - BTS3800SL
Smart low side power switch
Protection Functions
Datasheet 13 Rev. 1.1, 2011-04-30
7 Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in this datasheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are not designed for continuous repetitive operation.
7.1 Over Load Protection
The BTS3800SL is protected in case of over load or short circuit of the load. After time tOFF(OVL), the device
switches off. It can be switched on by toggeling the IN pin. Please refer to Figure 8 for details.
Figure 8 Shut down at over load
7.2 Over Temperature Protection
A temperature sensor causes a overheated BTS3800SL to switch off to prevent destruction. It can be switched on
again by toggeling the IN pin.
7.3 Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode of the power transistor causes power dissipation. The reverse
current through the intrinsic body diode of the power transistor has to be limited by the connected load.
The over temperature and over load protection is not active during reverse polarity.
Datasheet 14 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Protection Functions
7.4 Protection Characteristics
Note: Characteristics show the deviation of parameter at given supply voltage and junction temperature. Typical
values show the typical parameters expected from manufacturing.
Electrical Characteristics: Protection
Tj = -40 °C to +150 °C, Vbat = 8.0 V to 18V,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Over Load Protection
7.4.1 Over load detection current ID(OVL) 0.75 – 1.5 A
7.4.2 Over load shut-down delay time tOFF(OVL) 5–15μsVIN = 5 V
Over Temperature Protection
7.4.3 Thermal shut down temperature Tj(SC) 150 170 200 °C1)
1) Not subject to production test, specified by design.
Over Voltage Protection
7.4.4 Output clamping voltage VDS(AZ) 41 – 50 V ID =10 mA
VIN = 0 V
Datasheet 15 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
HITFET - BTS3800SL
Smart low side power switch
Package Outlines BTS3800SL
Datasheet 16 Rev. 1.1, 2011-04-30
8 Package Outlines BTS3800SL
Figure 9 PG-SCT595 (Plastic Green Semiconductor Transistor Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
SCT595-PO V05
1.1 MAX.
0.1 MAX.
(2.2)
(0.3)
(1.45)
(0.4)
1)
(0.23)
1)
(0.13)
1) Contour of slot depends on profile of gull-wing lead form
1.2
-0.05
+0.1
±0.2
2.9 B
0.3
-0.05
+0.1
+0.1
0.6
-0.05
0.95
1.9
B
M
0.25
±0.1
A
1.6
±0.1
0.25
±0.1
2.5
0.15
-0.06
+0.1
0.2
M
A
3
45
21
Dimensions in mm
For further information on packages, please visit our website:
http://www.infineon.com/packages.
Datasheet 17 Rev. 1.1, 2011-04-30
HITFET - BTS3800SL
Smart low side power switch
Revision History
9 Revision History
Version Date Changes
Rev. 1.1 2011-04-30 initial released data sheet
Edition 2011-04-30
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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Related Product Links
726-BTS3800SL - Infineon BTS3800SL