CM900DUC-24NF - Mitsubishi Electric & Electronics USA, Inc.

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

1 April-2012

CM900DUC-24NF - MPD series using 5th Generation IGBT and FWDi -

●IC ….………………….…. 900 A

●VCES ……………..…...….. 1200 V

●Flat base Type

●Copper (non-plating) base plate

●RoHS Directive compliant

Dual (Half-Bridge) ●UL Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm

INTERNAL CONNECTION

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

Di2

Tr2

C2E1

(Es2) C1

Tr1

Di1

(Cs2)

(Es1)

(Cs1)

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

2 April-2012

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

IC DC, TC=96 °C (Note2) 900

ICRM Collector current Pulse, Repetitive (Note3) 1800

Ptot Total power dissipation TC=25 °C (Note2, 4) 5950 W

IE (Note1) TC=25 °C (Note2, 4) 900

IERM (Note1)

Emitter current

(Free wheeling diode forward current) Pulse, Repetitive (Note3) 1800

Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

Tj Junction temperature - -40 ~ +150

Tstg Storage temperature (Note7) -40 ~ +125 °C

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA

IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 1 μA

VGE(th) Gate-emitter threshold voltage IC=90 mA, VCE=10 V 6 7 8 V

IC=900 A (Note5) , T j=25 °C - 1.8 2.5

VCEsat Collector-emitter saturation voltage VGE=15 V T j=125 °C - 2.0 - V

Cies Input capacitance - - 140

Coes Output capacitance - - 16

Cres Reverse transfer capacitance

VCE=10 V, G-E short-circuited

- - 3.0

QG Gate charge VCC=600 V, IC=900 A, VGE=15 V - 4800 - nC

td(on) Turn-on delay time - - 600

tr Rise time VCC=600 V, IC=900 A, VGE=±15 V, - - 200

td(off) Turn-off delay time - - 800

tf Fall time RG=0.35 Ω, Inductive load - - 300

VEC (Note1) Emitter-collector voltage IE=900 A, G-E short-circuited (Note5) - 2.5 3.2 V

trr (Note1) Reverse recovery time VCC=600 V, IE=900 A, VGE=±15 V, - - 500 ns

Qrr (Note1) Reverse recovery charge RG=0.35 Ω, Inductive load - 50 - μC

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=900 A, - 147.5 -

Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0.35 Ω, Tj=125 °C, - 88 -

Err (Note1) Reverse recovery energy per pulse Inductive load - 91.8 -

RCC'+EE' Internal lead resistance Main terminals-chip, per switch,

TC=25 °C (Note2) - 0.286 - mΩ

rg Internal gate resistance Per switch - 1.0 - Ω

THERMAL RESISTANCE CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Rth(j-c)Q Junction to case, per IGBT - - 21 K/kW

Rth(j-c)D Thermal resistance (Note2) Junction to case, per FWDi - - 34 K/kW

Rth(c-s) Contact thermal resistance (Note2) Case to heat sink, per 1/2 module,

Thermal grease applied (Note6) - 12 - K/kW

MECHANICAL CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Mt Main terminals M 6 screw 3.5 4.0 4.5

Ms Mounting torque Mounting to heat sink M 6 screw 3.5 4.0 4.5 N·m

m Weight - - 1450 - g

ec Flatness of base plate On the centerline X, Y1, Y2 (Note8) -50 - +100 μm

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

3 April-2012

RECOMMENDED OPERATING CONDITIONS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

VCC (DC) Supply voltage Applied across C1-E2 - 600 800

VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V

RG External gate resistance Per switch 0.35 - 2.2 Ω

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

2. Case temperature (TC) and heat sink temperature (T s) are defined on the each surface of base plate and heat sink

just under the chips. (Refer to the figure of chip location)

The heat sink thermal resistance {Rth(s-a)} should measure just under the chips.

3. Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed T jmax rating.

4. Junction temperature (T j) should not increase beyond Tjmax rating.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of test circuit)

6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

7. The operation temperature is restrained by the permission temperature of female connector housing.

8. Base plate flatness measurement points are as in the following figure.

+: Convex

-: Concave

+: Convex

Bottom

Label side

Bottom

39 mm 39 mm

-: Concave

9. Generally, the company name, the brand name listed in this material are the trademark of the companies or registered tradem

arks.

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

4 April-2012

CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

Tr1/Tr2: IGBT, Di1/Di2: FWDi. Each mark points the center position of each chip.

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

5 April-2012

TEST CIRCUIT AND WAVEFORMS

C2E1

Es2

Es1

Short

circuited

VGE=15 V

Cs1

Cs2

C2E1

Es2

Es1

Short

circuited

VGE=15 V

Cs1

Cs2

C2E1

Es2

Es1

Short

circuited

Cs1

Cs2

Short

circuited

C2E1

Es2

Es1

Short

circuited

Cs1

Cs2

Short

circuited

Tr1 Tr2 Di1 Di2

VCEsat test circuit VEC test circuit

～

td(on)

10%

90 %

vGE

VCC

-VGE

+VGE

-V

Load

～

0 V

0 A

vGE

0 V

td(off)

C2E1

Es1

Es2

Cs1

Cs2

Irr

Qrr=0.5×Irr×trr

0.5×Irr

trr

0 A

Switching characteristics test circuit and waveforms trr, Qrr test waveform

0.1×I

ICM

VCC

vCE

Eon

0.1×V

0.1×VCC

VCE

ICM

vCE

Eoff

0.02×IC

IEM

vEC

t0 V

Err

VCC

0 A

IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy integral range

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

6 April-2012

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) VGE=15 V (Chip)

COLLECTOR CURRENT IC (A)

200

400

600

800

1000

1200

1400

1600

1800

0246810

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

0 200 400 600 800 1000 1200 1400 1600 1800

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) G-E short-circuited (Chip)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

6 8 10 12 14 16 18 20

EMITTER CURRENT IE (A)

100

1000

10000

0.511.522.533.54

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

Tj=125 °C

Tj=25 °C

VGE=20 V

12 V

11 V

10 V

9 V

13.5 V

15 V

Tj=125 °C

Tj=25 °C

IC=1800 A

IC=900 A

IC=360 A

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

7 April-2012

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0.35 Ω, Tj=125 °C,

INDUCTIVE LOAD

VCC=600 V, IC=900 A, VGE=±15 V, Tj=125 °C,

INDUCTIVE LOAD

SWITCHING TIME (ns)

100

1000

10 100 1000

SWITCHING TIME (ns)

100

1000

0.1 1 10

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=0.35 Ω, Tj=125 °C,

INDUCTIVE LOAD, PER PULSE

VCC=600 V, IC/IE=900 A, VGE=±15 V, Tj=125 °C,

INDUCTIVE LOAD, PER PULSE

TURN-ON SWITCHING ENERGY (mJ)

100

1000

10 100 1000

100

TURN-OFF SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

1000

0.1 1 10

COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A)

EXTERNAL GATE RESISTANCE RG (Ω)

td(on)

td(off)

td(on)

td(off)

Eon

Eoff

Err

Eon

Eoff

Err

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

8 April-2012

CAPACITANCE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

G-E short-circuited, Tj=25 °C

VCC=600 V, VGE=±15 V, RG=0.35 Ω, Tj=25 °C,

INDUCTIVE LOAD

CAPACITANCE (nF)

0.1

100

1000

0.1 1 10 100

trr (ns), Irr (A)

100

1000

10 100 1000

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

(MAXIMUM)

IC=900 A, Tj=25 °C Single pulse, TC=25°C

GATE-EMITTER VOLTAGE VGE (V)

0 1000 2000 3000 4000 5000 6000 7000

NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

Rth(j-c)Q=21 K/kW, Rth(j-c)D=34 K/kW

GATE CHARGE QG (nC) TIME (S)

Cies

Coes

Cres

Irr

trr

VCC=400 V

VCC=600 V

MITSUBISHI IGBT MODULES

CM900DUC-24NF

HIGH POWER SWITCHING USE

INSULATED TYPE

9 April-2012

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