Data Sheet 1 05.99
SIPMOS ® Power Transistor
• P channel
• Enhancement mode
• Avalanche rated
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on)Package Ordering Code
BUZ 172 -100 V -5.5 A 0.6
Ω
TO-220 AB C67078-S1451-A2
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 37 ˚C
I
D -5.5
A
Pulsed drain current
T
C = 25 ˚C
I
Dpuls -22
Avalanche energy, single pulse
I
D = -5.5 A,
V
DD = -25 V,
R
GS = 25
Ω
L
= 8.4 mH,
T
j = 25 ˚C
E
AS
170
mJ
Gate source voltage
V
GS
±
20 V
Power dissipation
T
C = 25 ˚C
P
tot 40
W
Operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC
≤
3.1 K/W
Thermal resistance, chip to ambient
R
thJA
≤
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
BUZ 172
BUZ 172
Data Sheet 2 05.99
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = -0.25 mA,
T
j = 25 ˚C
V
(BR)DSS -100 - -
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) -2.1 -3 -4
Zero gate voltage drain current
V
DS = -100 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = -100 V,
V
GS = 0 V,
T
j = 125 ˚C
I
DSS
-
-
-10
-0.1
-100
-1
µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100
nA
Drain-Source on-resistance
V
GS = -10 V,
I
D = -3.7 A
R
DS(on) - 0.4 0.6
Ω
BUZ 172
Data Sheet 3 05.99
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = -3.7 A
g
fs 1 2-
S
Input capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
iss - 800 1200
pF
Output capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
oss - 220 330
Reverse transfer capacitance
V
GS = 0 V,
V
DS = -25 V,
f
= 1 MHz
C
rss - 90 140
Turn-on delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -2.8 A
R
GS = 50
Ω
t
d(on)
- 20 30
ns
Rise time
V
DD = -30 V,
V
GS = -10 V,
I
D = -2.8 A
R
GS = 50
Ω
t
r
- 120 180
Turn-off delay time
V
DD = -30 V,
V
GS = -10 V,
I
D = -2.8 A
R
GS = 50
Ω
t
d(off)
- 70 90
Fall time
V
DD = -30 V,
V
GS = -10 V,
I
D = -2.8 A
R
GS = 50
Ω
t
f
- 55 75
BUZ 172
Data Sheet 4 05.99
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S- - -5.5
A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM - - -22
Inverse diode forward voltage
V
GS = 0 V,
I
F = -11 A
V
SD - -1 -1.3
V
Reverse recovery time
V
R = -30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 200 -
ns
Reverse recovery charge
V
R = -30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 0.75 -
µC
BUZ 172
Data Sheet 5 05.99
Power dissipation
P
tot =
ƒ
(
T
C)
020 40 60 80 100 120 ˚C 160
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
Drain current
I
D =
ƒ
(
T
C)
parameter:
V
GS
≥
-10 V
020 40 60 80 100 120 ˚C 160
T
C
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
A
-6.0
I
D
Safe operating area
I
D =
ƒ
(
V
DS)
parameter:
D
= 0.01
, T
C = 25˚C
-1
-10
0
-10
1
-10
2
-10
A
I
D
-10 0 -10 1 -10 2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 25.0µs
Transient thermal impedance
Z
th JC =
ƒ
(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 172
Data Sheet 6 05.99
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0-2 -4 -6 -8 V-11
V
DS
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
A
-13
I
D
V
GS [V]
a
a -4.0
b
b -4.5
c
c -5.0
d
d -5.5
e
e -6.0
f
f -6.5
g
g -7.0
hh -7.5
i
i -8.0
j
j -9.0
k
k -10.0
l
P
tot = 40W
l -20.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
V
GS
0-2 -4 -6 -8 A-12
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.8
R
DS (on)
V
GS [V] =
a
-4.0
V
GS [V] =
a
-4.5
V
GS [V] =
a
-5.0
V
GS [V] =
a
a
-5.5
b
b
-6.0
c
c
-6.5
d
d
-7.0
e
e
-7.5
f
f
-8.0
g
g
-9.0
h
h
-10.0
i
i
-20.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
0-1 -2 -3 -4 -5 -6 -7 -8 V-10
V
GS
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
A
-14
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
0-2 -4 -6 -8 A-12
I
D
0.0
0.4
0.8
1.2
1.6
2.0
2.4
S
3.2
g
fs
BUZ 172
Data Sheet 7 05.99
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = -3.7 A,
V
GS = -10 V
-60 -20 20 60 100 ˚C 160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.7
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-2.8
-3.2
-3.6
-4.0
V
-4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0-5 -10 -15 -20 -25 -30 V-40
V
DS
-2
10
-1
10
0
10
1
10
C
nF
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-1
-10
0
-10
1
-10
2
-10
A
I
F
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BUZ 172
Data Sheet 8 05.99
Avalanche energy
E
AS =
ƒ
(
T
j)
parameter:
I
D = -5.5 A,
V
DD = -25 V
R
GS = 25
Ω
,
L
= 8.4 mH
20 40 60 80 100 120 ˚C 160
T
j
0
20
40
60
80
100
120
140
mJ
180
E
AS
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
-90
-92
-94
-96
-98
-100
-102
-104
-106
-108
-110
-112
-114
V
-120
V
(BR)DSS
