DS-IXD_602 - R00B PRELIMINARY 1
RoHS
2002/95/EC e
3
Pb
Features
•2A Peak Source/Sink Drive Current
•Wide Operating Voltage Range: 4.5V to 35V
•-40°C to +125°C Extended Operating Temperature
Range
•Logic Input Withstands Negative Swing of up to 5V
•Matched Rise and Fall Times
•Low Propagation Delay Time: 25ns
•Low 10μA Supply Current
•Low Output Impedance
Applications
•Efficient Power MOSFET and IGBT Switching
•Switch Mode Power Supplies
•Motor Controls
•DC to DC Converters
•Class-D Switching Amplifiers
•Pulse Transformer Driver
Description
The IXDF602/IXDI602/IXDN602 dual high-speed gate
drivers are especially well suited for driving the latest
IXYS MOSFETs and IGBTs. Each of the two outputs
can source and sink 2A of peak current while
producing voltage rise and fall times of less than 10ns.
The input of each driver is TTL and CMOS compatible,
and is virtually immune to latch up. Proprietary
circuitry eliminates cross conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the
IXDF602/IXDI602/ IXDN602 ideal for high-frequency
and high-power applications.
The IXDN is configured as a dual non-inverting driver,
the IXDI is configured as a dual inverting driver, and
the IXDF is configured as a dual driver, one inverting
and one non-inverting.
The IXDF602/IXDI602/IXDN602 family is available in a
standard 8-pin DIP (PI), 8-lead SOIC (SIA), 8-lead
SOIC with an exposed grounded metal back (SI), and
an 8-lead DFN (D2) package.
Ordering Information
Part Number Logic
Configuration Package Type Packing
Method Quantity
IXDF602D2TR 8-Lead DFN Tape & Reel 2000
IXDF602PI 8-Lead DIP Tube 50
IXDF602SI 8-Lead SOIC with Exposed, Grounded Metal Back Tube 100
IXDF602SITR 8-Lead SOIC with Exposed, Grounded Metal Back Tape & Reel 2000
IXDF602SIA 8-Lead SOIC Tube 100
IXDF602SIATR 8-Lead SOIC Tape & Reel 2000
IXDI602D2TR 8-Lead DFN Tape & Reel 2000
IXDI602PI 8-Lead DIP Tube 50
IXDI602SI 8-Lead SOIC with Exposed, Grounded Metal Back Tube 100
IXDI602SITR 8-Lead SOIC with Exposed, Grounded Metal Back Tape & Reel 2000
IXDI602SIA 8-Lead SOIC Tube 100
IXDI602SIATR 8-Lead SOIC Tape & Reel 2000
IXDN602D2TR 8-Lead DFN Tape & Reel 2000
IXDN602PI 8-Lead DIP Tube 50
IXDN602SI 8-Lead SOIC with Exposed, Grounded Metal Back Tube 100
IXDN602SITR 8-Lead SOIC with Exposed, Grounded Metal Back Tape & Reel 2000
IXDN602SIA 8-Lead SOIC Tube 100
IXDN602SIATR 8-Lead SOIC Tape & Reel 2000
INA
INB
A
B
OUTA
OUTB
INA
INB
A
B
OUTA
OUTB
INA
INB
OUTA
OUTB
A
B
IXD_602
2-Ampere Dual Low-Side
Ultrafast MOSFET Drivers
IXD_602
R00B PRELIMINARY 2
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Pin Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1.6 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2. Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3. Mechanical Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
IXD_602
R00B PRELIMINARY 3
1 Specifications
1.1 Pin Configurations 1.2 Pin Definitions
1.3 Absolute Maximum Ratings
Unless otherwise specified, absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device.
Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not
implied.
1.4 Recommended Operating Conditions
IXDF602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
IXDI602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
IXDN602
NC
INA
GND
INB
NC
OUTA
VCC
OUTB
1
4
3
2
8
5
6
7
A
B
Pin Name Description
INA Channel A Logic Input
INB Channel B Logic Input
OUTA
OUTA
Channel A Output -Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
OUTB
OUTB
Channel B Output -Sources or sinks current to
turn-on or turn-off a discrete MOSFET or IGBT
VCC Supply Voltage - Provides power to the device
GND Ground - Common ground reference for the
device
Parameter Symbol Minimum Maximum Units
Supply Voltage VCC -40V
All Other Pins - -0.3 VCC+0.3 V
Output Current -±2A
Junction Temperature TJ-55 +150 °C
Storage Temperature TSTG -65 +150 °C
Parameter Symbol Minimum Maximum Units
Supply Voltage VCC 4.5 35 V
Operating Temperature Range T
A-40 +125 °C
IXD_602
4PRELIMINARY R00B
1.5 Electrical Characteristics
Test Conditions: TA=25°C, 4.5V < VCC < 35V, one channel (unless otherwise noted).
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Voltage, High 4.5V < VCC < 18V VIH 3--
VInput Voltage, Low 4.5V < VCC < 18V VIL --0.8
Input Voltage Range - VIN -5 - VCC+0.3
Input Current 0V < VIN < VCC IIN -10 - 10 μA
Output Voltage, High - VOH VCC-0.025 --
V
Output Voltage, Low - VOL - - 0.025
Output Resistance, High State VCC=18V, IOUT=-10mA ROH -2.54
Ω
Output Resistance, Low State VCC=18V, IOUT=10mA ROL -23
Output Current, Continuous Limited by package power
dissipation IDC --±1A
Rise Time CLOAD=1000pF, VCC=18V tR-7.510
ns
Fall Time CLOAD=1000pF, VCC=18V tF-6.59
On-Time Propagation Delay CLOAD=1000pF, VCC=18V tONDLY -2532
Off-Time Propagation Delay CLOAD=1000pF, VCC=18V tOFFDLY -2030
Power Supply Current
VCC=18V, VIN=3.5V
ICC
-13mA
VCC=18V, VIN=0V --10
μA
VCC=18V, VIN=VCC --10
IXD_602
R00B PRELIMINARY 5
1.6 Electrical Characteristics
Test Conditions: TA=-40°C to +125°C, 4.5V < VCC < 35V, TJ<150°C, one channel (unless otherwise noted).
1.7 Thermal Characteristics
2 Performance Characteristics
Parameter Conditions Symbol Minimum Typical Maximum Units
Input Voltage, High 4.5V < VCC < 18V VIH 3--
VInput Voltage, Low 4.5V < VCC < 18V VIL --0.8
Input Voltage Range - VIN -5 - VCC+0.3
Input Current 0V < VIN < VCC IIN -10 - 10 μA
Output Voltage, High - VOH VCC-0.025 --
V
Output Voltage, Low - VOL - - 0.025
Output Resistance, High State VCC=18V, IOUT=-10mA ROH -2.56
Ω
Output Resistance, Low State VCC=18V, IOUT=10mA ROL -26
Output Current, Continuous Limited by package power
dissipation IDC --±1A
Rise Time CLOAD=1000pF, VCC=18V tR--11
ns
Fall Time CLOAD=1000pF, VCC=18V tF--10
On-Time Propagation Delay CLOAD=1000pF, VCC=18V tONDLY --40
Off-Time Propagation Delay CLOAD=1000pF, VCC=18V tOFFDLY --38
Power Supply Current
VCC=18V, VIN=3.5V
ICC
-13mA
VCC=18V, VIN=0V --10
μA
VCC=18V, VIN=VCC --10
Package Parameter Rating Units
D2 (8-Lead DFN)
θJA
100
°C/W
PI (8-Lead DIP) 125
SI (8-Lead SOIC with Exposed Metal Back) 71
SIA (8-Lead SOIC) 128
10%
90%
t
ondelay
t
offdelay
t
r
t
f
V
IH
V
IL
INx
OUTx
10%
90%
t
ondelay
t
offdelay
t
f
t
r
V
IH
V
IL
INx
OUTx
Inverting Driver WaveformsNon-Inverting Driver Waveforms
IXD_602
6PRELIMINARY R00B
3 Mechanical Dimensions
3.0.1 8-Pin SOIC - SIA Package
3.0.2 8-Pin SOIC - SI Package
Recommended PCB Land Pattern
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
1.30 / 1.75
(0.051 / 0.069)
0.10 / 0.25
(0.004 / 0.010)
4.80 / 5.00
(0.190 / 0.197)
PIN 1
0.31 / 0.51
(0.012 / 0.020)
5.80 / 6.20
(0.228 / 0.244)
3.80 / 4.00
(0.150 / 0.157)
1.27 BSC
(0.05 BSC)
0.40 / 1.27
(0.016 / 0.050)
0.10 / 0.25
(0.004 / 0.010)
0.25 / 0.50 x45º
(0.010 / 0.020 x45º)
0º / 8º
1.27
(0.050)
5.40
(0.213) 1.55
(0.061)
0.60
(0.024)
NOTE: Molded package conforms to JEDEC standard configuration
MS-012 variation AA.
Recommended PCB Land Pattern
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
NOTE: Molded package conforms to JEDEC standard configuration
MS-012 variation BA.
1.30 / 1.75
(0.051 / 0.069)
0.03 / 0.10
(0.001 / 0.004)
4.80 / 5.00
(0.190 / 0.197)
PIN 1
0.31 / 0.51
(0.012 / 0.020)
5.80 / 6.20
(0.228 / 0.244)
3.80 / 4.00
(0.150 / 0.157)
1.27 BSC
(0.05 BSC)
0.40 / 1.27
(0.016 / 0.050)
0.10 / 0.25
(0.004 / 0.010)
0.25 / 0.50 x45º
(0.010 / 0.020 x45º)
0º / 8º
2.29 / 2.79
(0.090 / 0.110)
3.30 / 3.81
(0.130 / 0.150)
1.27
(0.050)
5.40
(0.209)
1.55
(0.061)
0.60
(0.024)
2.75
(0.108)
3.80
(0.150)
IXD_602
R00B PRELIMINARY 7
3.0.3 8-Pin DFN - D2 Package
3.0.4 8-Pin DIP - PI Package
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
5.00 BSC
(0.197 BSC)
4.00 BSC
(0.158 BSC)
0.80 / 1.00
(0.031 / 0.039)
0.00 / 0.05
(0.000 / 0.002)
0.95 BSC
(0.037 BSC)
0.76 / 0.81
(0.030 / 0.032)
0.30 / 0.45
(0.012 / 0.018)
3.04 / 3.09
(0.120 / 0.122)
2.54 / 2.59
(0.100 / 0.102)
0.35 / 0.45 x 45º
(0.014 / 0.018 x 45º)
Pin 1
Pin 1 Pin 8
0.20 REF
(0.008 REF)
Recommended PCB Land Pattern
4.50
(0.177)
0.45
(0.018)
1.20
(0.047)
3.05
(0.120)
2.55
(0.100)
0.95
(0.037)
0.35 x 45º
(0.014 x 45º)
Dimensions
mm MIN / mm MAX
(inches MIN / inches MAX)
NOTE: Molded package conforms to JEDEC standard configuration
MS-001 variation BA.
PC Board Pattern
7.62 / 10.92
(0.300 / 0.430)
7.62 BSC
(0.300 BSC)
0.20 / 0.38
(0.008 / 0.015)
7.37 / 8.26
(0.290 / 0.325)
0.38 / 0.58
(0.015 / 0.023)
1.14 / 1.65
(0.045 / 0.065)
0.38 / 1.02
(0.015 / 0.040)
3.05 / 3.81
(0.120 / 0.150) 3.43 / 4.70
(0.135 / 0.185)
3.18 / 3.81
(0.125 / 0.150)
8-0.900 DIA.
(8-0.035 DIA.)
7.50
(0.295)
2.540
(0.100)
9.02 / 10.16
(0.355 / 0.400)
6.10 / 6.86
(0.240 / 0.270)
2.540 BSC
(0.100 BSC)
1.40
(0.055)
For additional information please visit our website at: www.clare.com
Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and
product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard Terms and Conditions of Sale,
Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for
a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental
damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_602-R00B
©Copyright 2010, Clare, Inc.
All rights reserved. Printed in USA.
7/7/2010
