Data Sheet Switching Diode DAP202U Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 1.3 2.00.2 0.65 0.9MIN. Features 1) Small mold type. (UMD3) 2) High reliability. 2.10.1 1.250.1 (3) 0.8MIN 00.1 (1) 0.65 UMD3 0.1Min (2) Construction Silicon epitaxial planar 1.6 0.30.1 Each lead has same dimension 0.150.05 0.65 0.70.1 1.30.1 Structure 0.90.1 ROHM : JEDEC :S0T-323 JEITA : SC-70 week code (year week factory) Taping specifications (Unit : mm) 1.550.05 2.00.05 0.30.1 Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 0.50.05 4.00.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward voltage (Single) Average rectified forward current (Single) Io Isurge Surge current (t=1us) (Single) Power dissipation Pd Junction temperature Tj Storage temperature Tstg Rated in slash put frequency f Limits 2.40.1 8.00.2 00.1 2.40.1 2.250.1 0 5.50.2 3.50.05 1.750.1 4.00.1 1.250.1 Unit V V mA mA A mW C C MHz 80 80 300 100 4 200 150 55 to 150 100 Min. Typ. Max. Unit Conditions - - 1.2 V IF=100mA Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Reverse recovery time Ct - - 3.5 pF trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 2011.06 - Rev.A Data Sheet DAP202U Ta=75 100000 Ta=125 10 Ta=150 REVERSE CURRENT : IR(nA) FORWARD CURRENT : I F(mA) Ta=150 Ta=25 Ta=25 1 10 Ta=125 f=1MHz 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=75 100 Ta=25 10 Ta=25 1 0.1 0 0 900 10 0 70 880 870 860 AVE:877.0mV 80 60 50 40 30 20 8 7 6 5 4 3 2 AVE:1.840pF 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 5 10 15 8.3ms 10 AVE:2.50A 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT : I FSM(A) REVERSE RECOVERY TIME:trr(ns) 1cyc 5 4 3 2 1 Ifsm 4 8.3ms 2 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=10mA 10 1ms IF=100mA time 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 8 7 6 5 4 3 AVE:1.32kV AVE:5.47kV 2 1 300us 1 0.001 100 9 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT : I FSM(A) 100 8.3ms 1cyc 3 AVE:1.93ns 0 0 20 Ta=25 VR=6V f=1MHz n=10pcs 1 AVE:17.93nA 0 Ifsm 15 9 70 10 20 10 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 890 5 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS Ta=25 VR=70V n=10pcs 90 850 PEAK SURGE FORWARD CURRENT : I FSM(A) 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 100 Ta=25 IF=100mA n=30pcs REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 0.1 0.1 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 1000 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A