DE275-201N25A
RF Power MOSFET
V
DSS = 200 V
ID25 = 25 A
RDS(on) = 0.13 Ω
ΩΩ
Ω
PDC = 590 W
Symbol Test Conditions Characteristic Values
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 3.0 5.5 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1 µA
mA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% .13 Ω
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test 13 16 18 S
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm(0.063 in) from case for 10 s 300 °C
Weight 2 g
T
J
= 25°C unless otherwise specified
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
DRAIN
SG1 SG2
GATE
SD1 SD2
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 200 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 200 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 25 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
150 A
I
AR
T
c
= 25°C 25 A
E
AR
T
c
= 25°C 20 mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5 V/ns
I
S
= 0 >200 V/ns
P
DC
590 W
P
DHS
T
c
= 25°C
Derate 1.9W/°C above 25°C 284 W
P
DAMB
T
c
= 25°C 3.0 W
R
thJC
0.25 C/W
R
thJHS
0.53 C/W
DE275-201N25A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ.
R
G
0.3 Ω
C
iss
2500 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 265 pF
C
rss
42 pF
C
stray
Back Metal to any Pin 21 pF
T
d(on)
5 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
5 ns
T
d(off)
8 ns
T
off
8 ns
Q
g
81 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
14 nC
Q
gd
42 nC
max.
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 25 A
I
SM
Repetitive; pulse width limited by T
JM
150 A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 2.0 V
T
rr
300 ns
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
DE275-201N25A
RF Power MOSFET
V
D S
vs.Capacitance
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160
V
DS
Voltage (V)
Capacitance (pF)
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 100V, I
D
= 12.5A
0
2
4
6
8
10
12
14
16
0 50 100 150
Gate Charge (nC)
Gate-to-Source Voltage (V)
Typical Output Characteristics
0
20
40
60
80
100
120
0 10 20 30 40 50 60
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Typical Transfer Characteristics
V
DS
= 60V, PW = 4uS
0
20
40
60
80
100
120
140
5 6 7 8 9 10
V
GS
, Gate-to Source Voltage (V)
I
D
, Drain Current (A)
Top 9-10V
8V
7.5V
7V
6.5V
6V
5.5V
Bottom 5V
C
iss
C
oss
C
rss
Fig. 1 Fig. 2
Fig. 3 Fig. 4
DE275-201N25A
RF Power MOSFET
Source
Gate Drain
Fig. 5 Package Drawing
Source
Source
Source
DE275-201N25A
RF Power MOSFET
201N25A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is
the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
Figure 6 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-201n25a.html
Net List:
**********
*SYM=POWMOSN
.SUBCKT 201N25A 10 20 30
* TERMINALS: D G S
* 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 .13
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
5 6
7
8
4
10 DRAIN
30 SOURCE
20 GATE
Don
Dcos
D2crs
D1crs
Rds
Ron
Doff
Roff Rd
Lg
Ld
Ls
M3
2
13
An
IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
Doc #9200-0260 Rev 4
© 2009 IXYS RF
