OL DE M38?508L 0017536 1 7 OTE 17536 D T- 33-4 Pro Electron Power Transistors File Number 673 BD243, BD243A, BD243B, BD243C Epitaxial-Base Silicon N-P-N VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: = 65 W at 25C case temperature 7-A rated collector current e, = Min. fy of 3 MHz at 10 V, 500 mA = Complements of p-n-p types BD244, BD244A, BD244B, and BD244C TERMINAL DESIGNATIONS Types BD243, 8D243A, BD243B, and BD243C are epitaxial- base silicon n-p-n transistors; they differ only in their voltage ratings. These devices are intended for a wide variety of switching and amplifier applications such as series and shunt regulators, and driver and output stages of high-fidelity 41 (FLANGE) amplifiers, The BD243-series power transistors are complements Oj} oO of the devices in the BD244 series. (The BD244-series devices are described in File No, 674.) All types utilize the JEDEC TO-220AB (VERSAWATT) plas- tic package. MAXIMUM RATINGS, Absolute-Maximum Values: TOP VIEW 9205-39069 JEDEC TO-220AB BD243 BD243A BD243B BO243C COLLECTOR-TO-EMITTER VOLTAGE: With external base-to-emitter resistance (Rgg) = 10092 .......... VcER 55 70 90 115 Vv With base open ...............0.. VcEO 45 60 80 100 v EMITTER-TO-BASE VOLTAGE....... VeRO 5 5 5 5 Vv CONTINUOUS COLLECTOR CURRENT le 7 7 7 7 A PEAK COLLECTOR CURRENT........ Ic (PEAK) 10 10 10 10 A CONTINUOUS BASE CURRENT...... tp 3 3 3 3 A TRANSISTOR DISSIPATION: Py At case temperatures up to 25C .... 65 65 65 . 65 Ww At ambient temperatures up to 25C . 2 2 2 2 Ww At case temperatures above 25C .... +______-_ See Fig. 2 ___ TEMPERATURE RANGE: Storage & Operating (Junction}...... M_ @__- -65 to 150 ~________--__ C LEAD TEMPERATURE (During Soldering): At distance 1/8 in. (3.17 mm) from case for 10 smax. ..........-0000% * 235 > C 541 1079 G~-10OL deff 3s7soa1 oo17sa7 3 9 3875081 G E SOLID STATE i ap Pro Electron Power Transistors = O1E 17537 D T 33 | | BD243, BD243A, BD243B, BD243C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 26C TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL VOLTAGE CURRENT 80243 BD243A BD243B 80243 UNITS Voel Vac} tc | ip | MIN. | MAX. | MIN. | MAX.] MIN. | MAX, | MIN. | MAX, Collector Cutoff Current: 1 30 0 - 0.7 ~ 07 ~ = = _ With base open cea 60 0 - - - - _- 0.7 ~ 0.7 A m. With base-to-emittar 45 0 - 0.4 - - = = _ junction short-circuited \ 60 0 - - - 0.4 _ - _ ~ ces so | 0 ~ - - - - o4 | - - 100 G = - - = - - _ 0.4 Emitter Cutoff Current leno -5 , 0 ~- 1 - 1 - 1 ~- 1 mA Collector-to-Emitter Breakdown Voltage: VeRICEO} 0.0377 0 45 - 60 - 80 - 400 - v With base open OC Forward-Current h Transfer Ratio FE 4 + 2 3 30 - 30 - 30 - 30 - ES 15 - 15 - 18 ~ 15 _ Base-to-Emitter Voltage Vee 4 6? - 2 - 2 = 2 - 2 Vv 6 Collector-to-E mitter Saturation Voltage Common-Emitter Small-Signal Shart- Circuit Forward- Current Transfer Ratio (f = 1 kHz} Magnitude of Common Emitter Smail-Signal h Short-Circuit Forward- | e| Current Transfer Ratio {f= 1 MHz} Thermal Resistance: dunction-to-Case Rasc _ 1.92 - 1.92 - 1.92 - 1,92 Junction-to-Ambient Raga - 625 - 62.5 = 625 - 62.5 cw 4Puised: Pulse duration = 300 us, duty factor = 2%. 542 1080 G-11aan ee nes = OTE 17538 TE BRY] Pro Electron Power Transistors BD243, BD243A, BD243B, BD243C 3875081 G E SOLID STATE 300s ms toms oc DISSIPATION LIMITED. Yoeg MAX #45 v (e023) Yoeo MAX 60V[80243A) Yoeo MAX. = 80 (BD2438) MAX. 100 {80243) ' 8 2 4 as t . 10 too 1000 COLLECTOR -TO -EMITTER VOLTAGE (Vcp)~ V 2 4 9209-22451 Fig. 1 Maximum sate operating areas for all types. CURRENT DERATING AT CONSTANT VOLTAGE. ONLY TO THE CHSSIPATION-LIMITED MAXIMUM -OPERATING-AREA CURVES {FIG.I1. 00 OERATE THE SPECIFIED VALUE FOR I MAX, es ri} CASE TEMPERATURE (Tco1-*C 9205-19663 Fig. 2~ Derating curves for all types. TO-EMITTER VOLTAGE (Vcel* 4 3 pees DC FORWARD-CURRENT TRANSFER RATIO Ihe) ool OF t 10 COLLECTOR CURRENT (Ic]A 920$-19668RE Fig. 3 - Typical dc beta characteristics for all types. 543