© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V
VGSS Continuous ± 20 V
VGSM Transient ± 30 V
ID25 TC= 25°C 120 A
ILRMS Terminal Current Limit 75 A
IDM TC= 25°C, Pulse Width Limited by TJM 300 A
IA TC= 25°C60A
EAS TC= 25°C 2.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 700 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight TO-264 10 g
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
zInternational Standard Package
zFast Intrinsic Diode
zAvalanche Rated
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zSwitched-Mode and Resonant-Mode
Power Supplies
zDC-DC Converters
zLaser Drivers
zAC and DC Motor Drives
zRobotics and Servo Controls
IXTK120N25P VDSS = 250V
ID25 = 120A
RDS(on) ≤≤
≤≤
≤ 24mΩΩ
ΩΩ
Ω
DS99175F(5/09)
PolarTM
Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 250 V
VGS(th) VDS = VGS, ID = 500μA 2.5 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0 V 25 μA
TJ = 125°C 250 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 19 24 mΩ
G = Gate D = Drain
S = Source TAB = Drain
TO-264
S
G
D(TAB)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK120N25P
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 45 70 S
Ciss 8700 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1300 pF
Crss 240 pF
td(on) 30 ns
tr 33 ns
td(off) 130 ns
tf 33 ns
Qg(on) 185 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 50 nC
Qgd 80 nC
RthJC 0.18 °C/W
RthCK 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 120 A
ISM Repetitive, Pulse Width Limited by TJM 300 A
VSD IF = 120A, VGS = 0V 1.5 V
trr 200 ns
QRM 3.0 μC
IRM 8.0 A
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
IF = 25A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
TO-264 (IXTK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK120N25P
Fig. 1. Outpu t C h ar acteri sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
100
110
120
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
7
V
8
V
6
V
Fig. 2. Extended Output Characteristics
@ 25º C
0
40
80
120
160
200
240
0 2 4 6 8 10 12 14 16 18 20
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
7
V
6
V
9
V
8
V
Fi g . 3. Ou tp u t C h ar acter i stic s
@ 125ºC
0
20
40
60
80
100
120
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
9V
8
V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D
= 60A Value
vs. Junction T emp erature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma lize d
V
GS
= 10V
I
D
= 120A
I
D
= 60A
Fig. 5. R
DS(on)
Normalized to I
D
= 60A Val u e
vs. Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 30 60 90 120 150 180 210 240 270
I
D
- Ampe res
R
DS(on)
- N orma lize d
V
GS
= 10V
15V
- - - -
T
J
= 150ºC
T
J
= 25ºC
Fig. 6. Maximum Drain Current vs.
Case Temp er atur e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mpe re s
Exter nal Lead Current Limit
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK120N25P
Fig. 7. Input Admi ttance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Volts
I
D
- A mpe re s
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- A mp ere s
g
f s
- S ie men s
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
- V olts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 125V
I
D
= 60A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- A mpe res
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK120N25P
Fig. 13. Maxim u m T ransient Thermal Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXYS REF: T_120N25P(88)4-27-09
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