BSB280N15NZ3GXUMA1 - INFINEON TECHNOLOGIES AG

Industrial & Multimarket

Data Sheet

2.5, 2011-09-16

Final

OptiMOS™

BSB280N15NZ3 G

n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSB280N15NZ3 G
  
Final Data Sheet 1 2.5, 2011-09-16
  
1 Description
OptiMOS™150V products are class leading power MOSFETs for highest power
density and energy efficient solutions. Ultra low gate- and output charges together
with lowest on state resistance in small footprint packages make OptiMOS™
150V the best choice for the demanding requirements of voltage regulator
solutions in Solar, Drives, Datacom and Telecom applications. Super fast
switching Control FETs together  with low EMI Sy nc FETs prov ide solutions tha t
are easy to design in. OptiMOS™ products are available in high performance
packages to tackle your most challenging applications giving full flexibility in
optimizing space- efficiency and cost. 
Features
• Optimized for high switching frequency DC/DC converter
• Very low on-r esistance RDS(on)
• Qualified according to JEDEC1) for target applications
• Excellent gate charge x RDS(on) product (FOM)
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Double sided cooling
• Compatible with DirectFET® package MZ footprint and outline
• Low parasitic inductance
• Low profile (<0.7 mm)
Applications
• Synchronous rectification
• Primary side switches
• Power managment for high performance computing
• High power density point of load converters
1) J-STD20 and JESD22
Table 1 Key Performance Parameters
Parameter Value Unit Related Links
VDS 150 V IFX OptiMOS webpage
RDS(on),max 28 mΩIFX OptiMOS product brief
ID30 A IFX OptiMOS spice models
QOSS 38 nC IFX Design tools
Qg.typ 15
Type Package Marking
BSB280N15NZ3 G MG-WDSON-2 0215

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Final Data Sheet 2 2.5, 2011-09-16

2Maximum ratings

at Tj = 25 °C, unless otherwise specified.

3 Thermal characteristics

Table 2 Maximum ratings

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current ID--30 AVGS=10 V, TC=25 °C

19 VGS=10 V, TC=100 ° C

9VGS=10 V, TA=25 °C,

RthJA=45 K/W)1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical in still air.

Pulsed drain current2)

2) See figure 3 for more detailed information

ID,pulse --120 TC=25 °C

Avalanche energy, single pulse EAS --120 mJID=30 A,RGS=25 Ω

Gate source voltage VGS -20 - 20 V

Power dissipation Ptot --57 WTC=25 °C

2.8 TA=25 °C, RthJA=45 K/W1)

Operating and storage temperature Tj,Tstg -40 - 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Table 3 Thermal characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC - - 2.2 K/W top

1 - bottom

Device on PCB RthJA --45 6 cm

2 cooling area1)

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.

PCB is vertical in still air.

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics

Final Data Sheet 3 2.5, 2011-09-16

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4 Static characteristics

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage V(BR)DSS 150 - - V VGS=0 V, ID=1.0 mA

Gate threshold voltage VGS(th) 234 VDS=VGS, ID=60 µA

Zero gate voltage drain current IDSS -0.110µAVDS=120 V, VGS=0 V,

Tj=25 °C

- 10 100 VDS=120 V, VGS=0 V,

Tj=125 °C

Gate-source leakage current IGSS - 10 100 nA VGS=20 V, VDS=0 V

Drain-source on-state resistance RDS(on) -2428mΩVGS=10 V, ID=30A

24 32 VGS=8 V, ID=15A

Gate resistance RG-0.6-Ω

Transconductance gfs 18 37 S |VDS|>2|ID|RDS(on)max,

ID=30 A

Table 5 Dyn ami c ch a r acte ris tic s

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Input capacitance Ciss - 1200 1600 pF VGS=0 V, VDS=75V,

f=1 MHz

Output capacitance Coss - 180 240

Reverse transfer capacitance Crss -4-

Turn-on dela y time td(on) -9-nsVDD=75V, VGS=10 V,

ID=30 A, RG=1.6 Ω

Rise time tr-6-

Turn-off delay time td(off) -16-

Fall time tf-3-

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics

Final Data Sheet 4 2.5, 2011-09-16

Table 6 Gate charge characteristics1)

1) See figure 16 for gate charge parameter definition

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Gate to sour ce charge Qgs -7-nCVDD=75 V,

ID=30 A,

VGS=0 to 10 V

Gate to drain charge Qgd -2.6-

Switching charge Qsw -7-

Gate charge total Qg-1521

Gate plateau voltage Vplateau -5.6-V

Output charge Qoss 41 55 VDD=75 V, VGS=0 V

Table 7 Reverse diode characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Diode continuous forward current Is47 A TC=25 °C

Diode pulse current IS,pulse 120

Diode forward voltage VSD -0.91.2VVGS=0 V, IF=47 A,

Tj=25 °C

Reverse recovery time trr -100-nCVR=75 V, IF=30A,

diF/dt=100 A/µs

Reverse reco very charge Qrr 314

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics diagrams

Final Data Sheet 5 2.5, 2011-09-16

5 Electrical characteristics diagrams

Table 8

1 Power dissipation 2 Drain current

Ptot = f(TC) ID=f(TC); parameter:VGS

Table 9

3 Safe operating area TC=25 °C 4 Max. transient thermal impedance

ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics diagrams

Final Data Sheet 6 2.5, 2011-09-16

Table 10

5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistanc e

ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS

Table 11

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics diagrams

Final Data Sheet 7 2.5, 2011-09-16

Table 12

9 Drain-sour ce on-s ta te resistance 10 Typ. gate th re s hold voltage

RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA

Table 13

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Electrical characteristics diagrams

Final Data Sheet 8 2.5, 2011-09-16

Table 14

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD

Table 15

15 Drain-source breakdown voltage 16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Package outlines

Final Data Sheet 9 2.5, 2011-09-16

6 Package outlines

Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Package outlines

Final Data Sheet 10 2.5, 2011-09-16

7 Package outlines

Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Package outlines

Final Data Sheet 11 2.5, 2011-09-16

8 Package outlines

Figure 3 Outlines MG-WDSON-2, dimensions in mm/inches

9 Marking layout

OptiMOS™ Power-MOSFET

BSB280N15NZ3 G

Revision History

Final Data Sheet 12 2.5, 2011-09-16

9 Revision History

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Edition 2011-09-16

Published by

Infineon Technologies AG

81726 Munich, Germany

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Revision History: 2011-09-16, 2.5

Previous Revision:

Revision Subjects (major changes since last revision)

0.1 Release of target data sheet

2.2 Release Final version

2.3 Formating

2.4 DirectFET Disclaimer expired