HFA08TB60SPbF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A FEATURES * * * * * * * Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Compliant to RoHS directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition * AEC-Q101 qualified Base cathode + 2 BENEFITS N/C 1 3 - * * * * * Anode D2PAK Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION HFA08TB60S is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the HFA08TB60S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED(R) product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB60S is ideally suited for applications in power supplies (PFC boost diode) and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY VR 600 V VF at 8 A at 25 C 1.7 V IF(AV) 8A trr (typical) 18 ns TJ (maximum) 150 C Qrr (typical) 65 nC dI(rec)M/dt (typical) 240 A/s IRRM 5.0 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage TEST CONDITIONS VR Maximum continuous forward current IF Single pulse forward current IFSM Maximum repetitive forward current IFRM Maximum power dissipation PD Operating junction and storage temperature range TC = 100 C VALUES UNITS 600 V 8 60 A 24 TC = 25 C 36 TC = 100 C 14 TJ, TStg - 55 to + 150 W C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94048 Revision: 02-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 HFA08TB60SPbF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 A IF = 8.0 A Maximum forward voltage VFM IF = 16 A See fig. 1 IF = 8.0 A, TJ = 125 C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body TJ = 125 C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 - 1.4 1.7 UNITS V - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH MAX. UNITS A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 6 Peak recovery current Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS MIN. TYP. trr IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V - 18 - trr1 TJ = 25 C - 37 55 trr2 TJ = 125 C - 55 90 IRRM1 TJ = 25 C - 3.5 5.0 IRRM2 TJ = 125 C - 4.5 8.0 - 65 138 - 124 360 IF = 8.0 A dIF/dt = 200 A/s VR = 200 V ns A Qrr1 TJ = 25 C Qrr2 TJ = 125 C dI(rec)M/dt1 TJ = 25 C - 240 - dI(rec)M/dt2 TJ = 125 C - 210 - MIN. TYP. MAX. UNITS - - 300 C - - 3.5 - - 80 - 2.0 - g - 0.07 - oz. nC A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device www.vishay.com 2 Case style D2PAK For technical questions, contact: diodestech@vishay.com HFA08TB60S Document Number: 94048 Revision: 02-Sep-09 HFA08TB60SPbF 1000 100 TJ = 150 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A 10 TJ = 150 C TJ = 125 C TJ = 25 C 1 100 TJ = 125 C 10 1 0.1 TJ = 25 C 0.01 0.001 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 300 200 500 400 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal response) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94048 Revision: 02-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 HFA08TB60SPbF Vishay High Power Products HEXFRED(R) Ultrafast Soft Recovery Diode, 8 A 80 500 IF = 16 A IF = 8 A IF = 4 A 400 Qrr (nC) trr (ns) 60 40 20 VR = 200 V TJ = 125 C TJ = 25 C 300 200 100 VR = 200 V TJ = 125 C TJ = 25 C 0 100 0 100 1000 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 10 000 20 VR = 200 V TJ = 125 C TJ = 25 C dI(rec)M/dt (A/s) 15 Irr (A) IF = 16 A IF = 8 A IF = 4 A IF = 16 A IF = 8 A IF = 4 A 10 IF = 16 A IF = 8 A IF = 4 A 1000 5 VR = 200 V TJ = 125 C TJ = 25 C 0 100 www.vishay.com 4 1000 100 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt For technical questions, contact: diodestech@vishay.com Document Number: 94048 Revision: 02-Sep-09 HFA08TB60SPbF HEXFRED(R) Vishay High Power Products Ultrafast Soft Recovery Diode, 8 A VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94048 Revision: 02-Sep-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0 to 8 MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000