SBRD81035CTLG - APTINA IMAGING

August, 2020 − Rev. 13

1Publication Order Number:

MBRD1035CTL/D

Schottky Power Rectifier,

Switch Mode, 10 A, 35 V

MBRD1035CTL,

NRVBD1035VCTL,

SBRD81035CTL Series

The MBRD1035CTL employs the Schottky Barrier principle in a

large area metal−to−silicon power diode. State of the art geometry

features epitaxial construction with oxide passivation and metal

overlay contact. Ideally suited for low voltage, high frequency

switching power supplies, free wheeling diode and polarity protection

diodes.

Features

•Highly Stable Oxide Passivated Junction

•Guardring for Stress Protection

•Matched Dual Die Construction −

May be Paralleled for High Current Output

•High dv/dt Capability

•Short Heat Sink Tap Manufactured − Not Sheared

•Very Low Forward Voltage Drop

•Epoxy Meets UL 94 V−0 @ 0.125 in

•SBRD8 and NRVBD Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 Gram (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•ESD Rating:

♦Human Body Model = 3B (> 8 kV)

♦Machine Model = C (> 400 V)

SCHOTTKY BARRIER

RECTIFIER

10 AMPERES

35 VOLTS

DPAK

CASE 369C

MARKING DIAGRAM

www.onsemi.com

AYWW

B10

35CLG

A = Assembly Location*

Y = Year

WW = Work Week

B1035CL = Device Code

G = Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

* The Assembly Location Code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

35 V

Average Rectified Forward Current

(TC = 115°C)

Per Leg

Per Package

5.0

Peak Repetitive Forward Current

(Square Wave, Duty = 0.5, TC = 115°C)

Per Leg

IFRM

Non−Repetitive Peak Surge Current

(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)

Per Package

IFSM

Storage / Operating Case Temperature Tstg, Tc−55 to +150 °C

Operating Junction Temperature (Note 1) TJ−55 to +150 °C

Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Thermal Resistance, Junction−to−Case

Per Leg

RqJC 3.0

°C/W

Thermal Resistance, Junction−to−Ambient (Note 2)

Per Leg

RqJA 137

°C/W

2. Rating applies when using minimum pad size, FR4 PC Board

ELECTRICAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2)

Per Leg

(IF = 5 Amps, TJ = 25°C)

(IF = 5 Amps, TJ = 100°C)

(IF = 10 Amps, TJ = 25°C)

(IF = 10 Amps, TJ = 100°C)

0.47

0.41

0.56

0.55

Maximum Instantaneous Reverse Current (Note 3) (See Figure 4)

Per Leg

(VR = 35 V, TJ = 25°C)

(VR = 35 V, TJ = 100°C)

(VR = 17.5 V, TJ = 25°C)

(VR = 17.5 V, TJ = 100°C)

2.0

0.20

5.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%

MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series

www.onsemi.com

ORDERING INFORMATION

Device Package Shipping

†

MBRD1035CTLG

DPAK

(Pb−Free)

75 Units / Rail

SBRD81035CTLG* 75 Units / Rail

SBRD81035CTLG−VF01* 75 Units / Rail

MBRD1035CTLT4G 2,500 Units / Tape & Reel

NRVBD1035VCTLT4G* 2,500 Units / Tape & Reel

SBRD81035CTLT4G* 2,500 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*SBRD8 and NRVBD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable.

TYPICAL CHARACTERISTICS

Figure 1. Typical Forward Voltage Per Leg Figure 2. Maximum Forward Voltage Per Leg

Figure 3. Typical Reverse Current Per Leg

1.100.10

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

100

VR, REVERSE VOLTAGE (VOLTS)

350

100E-6

1E-6

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0

0.500.30 0.70 0.90

10 20 30

10E-3

100E-3

0.1

, REVERSE CURRENT (AMPS)

1E-3

10E-6

TJ = 25°C

TJ = 100°C

TJ = 125°C

TJ = - 40°C

TJ = 125°C

Figure 4. Maximum Reverse Current Per Leg

1.100.10

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

100

IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

1.0

0.500.30 0.70 0.90

0.1

TJ = 25°C

TJ = 100°C

TJ = 125°C

1E+0

TJ = 100°C

TJ = 25°C

VR, REVERSE VOLTAGE (VOLTS)

350

100E-6

1E-6 10 20 30

10E-3

100E-3

1E-3

10E-6

TJ = 125°C

1E+0

TJ = 100°C

TJ = 25°C

I , MAXIMUM REVERSE CURRENT (AMPS)

MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series

www.onsemi.com

Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg

Figure 7. Capacitance Per Leg

1200

TL, LEAD TEMPERATURE (°C)

8.0

7.0

5.0

6.0

4.0

VR, DC REVERSE VOLTAGE (VOLTS)

250

105

VR, REVERSE VOLTAGE (VOLTS)

100

IO, AVERAGE FORWARD CURRENT (AMPS)C, CAPACITANCE (pF)

3.0

2.0

1.0

6020 40 80 100 140

30 355101520

115

125

510152025

TJ, DERATED OPERATING TEMPERATURE ( C)

1000

TJ = 25°C

freq = 20 kHz

Ipk/Io = p

Ipk/Io = 20

SQUARE WAVE

(50% DUTY CYCLE)

IO, AVERAGE FORWARD CURRENT (AMPS)

1.00

4.0

3.0

2.0

1.0

2.0

PFO, AVERAGE POWER DISSIPATION (WATTS)

3.0 4.0 5.0 6.0 7.0 8.0

3.5

2.5

1.5

0.5

Ipk/Io = 20

SQUARE WAVE

(50% DUTY CYCLE) dc

Figure 8. Typical Operating Temperature

Derating Per Leg *

Ipk/Io = 10

Ipk/Io = 5 Ipk/Io = 10

Ipk/Io = 5

Ipk/Io = p

RqJA = 84°C/W

RqJA = 67.5°C/W

RqJA = 48°C/W

RqJA = 25°C/W

RqJA = 2.43°C/W

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,

where r(t) = Rthja. For other power applications further calculations must be performed.

MBRD1035CTL, NRVBD1035VCTL, SBRD81035CTL Series

www.onsemi.com

Figure 9. Thermal Response Junction to Case (Per Leg)

Figure 10. Thermal Response Junction to Ambient (Per Leg)

0.10.00001

t, TIME (s)

1.0

0.1

0.01

0.0001 0.001 0.01

, TRANSIENT THERMAL RESISTANCE (NORMALIZED)

(t)

1.0 10 100 1000

50%(DUTY CYCLE)

20%

10%

5.0%

2.0%

1.0%

Rtjl(t) = Rtjl • r(t)

0.10.00001

t, TIME (s)

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

0.0001 0.001 0.01 1.0 10 100 10000

50% (DUTY CYCLE)

20%

10%

5.0%

2.0%

1.0%

SINGLE PULSE

r , TRANSIENT THERMAL RESISTANCE (NORMALIZED)

(t)

1000

SINGLE PULSE

Rtjl(t) = Rtjl • r(t)

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

DATE 21 JUL 2015

SCALE 1:1

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

STYLE 3:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

STYLE 4:

PIN 1. CATHODE

2. ANODE

3. GATE

4. ANODE

STYLE 5:

PIN 1. GATE

2. ANODE

3. CATHODE

4. ANODE

STYLE 6:

PIN 1. MT1

2. MT2

3. GATE

4. MT2

STYLE 7:

PIN 1. GATE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

STYLE 8:

PIN 1. N/C

2. CATHODE

3. ANODE

4. CATHODE

STYLE 9:

PIN 1. ANODE

2. CATHODE

3. RESISTOR ADJUST

4. CATHODE

STYLE 10:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. ANODE

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

XXXXXX = Device Code

A = Assembly Location

L = Wafer Lot

Y = Year

WW = Work Week

G = Pb−Free Package

AYWW

XXX

XXXXXG

XXXXXXG

ALYWW

DiscreteIC

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

GENERIC

MARKING DIAGRAM*

*This information is generic. Please refer

to device data sheet for actual part

marking.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DPAK (SINGLE GAUGE)

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