2007-08-17
BFY450
1
HiRel NPN Silicon RF Transistor
• HiRel Discrete and Microwave Semiconductor
• For Medium Power Amplifiers
• Compression Point P-1dB = 19 dbm 1.8 GHz
Max. available gain Gma = 16 dB at 1.8 GHz
• Hermetically sealed microwave package
• Transitor frequency fT = 20 GHz
• SIEGET 25 GHz fT - Line
Infineon Technologies Grounded Emitter Transistor-
25 GHz fT- Line
• esa Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFY450 (ql) - 1=C 2=E 3=B 4=E - - MICRO-X
(ql) Testing level: P: Professional testing
H: High Rel quality
S: Space quality
ES: ESA qualified
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 4.5 V
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 1.5
Collector current IC100 mA
Base current IB10
Total power dissipation
TS ≤ 110 °C 1)2) Ptot 450 mW
Junction temperature T
j
175 °C
Operating temperature range To
p
-65 ... 175 °C
Storage temperature Tst
g
-65 ... 175 °C
1Ts is measured on the collector lead at the soldering point to the pcb.
2At TS = 110°C. For TS > 110°C derating is required.
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS < 145 K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter cutoff current2)
VCE = 4.5 V, IB = 1 µA ICEX - - 200 µA
Collector -base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1.5 V, IC = 0 IEBO - - 50 µA
DC current gain
IC = 20 mA, VCE = 1 V hFE 50 90 150 -
1Ts is measured on the collector lead at the soldering point to the pcb.
2This test assures V(BR)CE0 > 4.5 V
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 90 mA, VCE = 3 V, f = 1 GHz
IC = 90 mA, VCE = 3 V, f = 2 GHz
fT
18
-
22
17
-
-
GHz
Collector-base capacitance
VCB = 2 V, VBE = vbe = 0 , f = 1 MHz Ccb - 0.42 0.9 pF
Collector emitter capacitance
VCE = 2 V, VBE = vbe = 0 , f = 1 MHz Cce - 1.27 2.6
Emitter-base capacitance
VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz Ceb - 2 3
Noise figure
IC = 10 mA, VCE = 2 V, ZS = ZSopt ,
f = 1.8 GHz
F- 1.25 2 dB
Power gain, maximum available
IC = 50 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
Gma1) - 16 -
Transducer gain
IC = 50 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
|S21e|28 12 - dB
1dB Compression point
IC = 50 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
P-1dB - 19 - dBm
1Gma = |S21e / S12e| (k-(k²-1)1/2)
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BFY450
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Micro-X Package
X Y
1.78
1.02
±0.1
0.1
ø1.65
±0.1
0.76
±0.25
1.05
GXM05552
1
2
3
4
-0.03
+0.05
-0.2
4.2
0.5
±0.1
2007-08-17
BFY450
5
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
